HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max) Q1: 2SA1955F Q2: RN1106F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −5 V Collector current IC −400 Base current IB −50 (E1) 1. EMITTER1 (B1) 2. BASE1 3. COLLECTOR2 (C2) (E2) 4. EMITTER2 (B2) 5. BASE2 6. COLLECTOR1 (C1) JEDEC ― mA JEITA ― mA TOSHIBA 2-2J1E Weight: 0.003 g (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC* 100 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. 1 2007-11-01 HN7G08FE Q1 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cutoff current ICBO ― Emitter cutoff current IEBO DC current gain Characteristic Min Typ. Max Unit VCB = −15 V, IE = 0 ― ― −100 nA ― VEB =− 5 V, IC = 0 ― ― −100 nA hFE ― VCE =− 2 V, IC =− 10 mA 300 ― 1000 VCE(sat) (1) ― IC =− 10 mA, IB =− 0.5 mA ― −15 −30 VCE(sat) (2) ― IC =− 200 mA, IB =− 10 mA ― −110 −250 VBE(sat) ― IC =− 200 mA, IB =− 10 mA ― −0.87 −1.2 V fT ― VCE =− 2 V, IC =− 10 mA ― 130 ― MHz Cob ― VCB =− 10 V, IE = 0, f = 1 MHz ― 4.2 ― pF Turn-on time ton ― ⎯ 40 ⎯ Storage time tstg ― ⎯ 280 ⎯ tf ― ⎯ 65 ⎯ (Note) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Switching time Fall time Test Condition IB1 = −IB2 = 5 mA mV ns Note: hFE classification A(A): 300~600, B(B): 500~1000 ( ) marking symbol Q2 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit ICBO ― ICEO Emitter cutoff current DC current gain Characteristic Min Typ. Max VCB = 50 V, IE = 0 ― ― 100 ― VCE = 50 V, IB = 0 ― ― 500 IEBO ― VEB = 5 V, IC = 0 0.074 ― 0.138 hFE ― VCE = 5 V, IC = 10 mA 80 ― ― Collector-emitter saturation voltage VCE(sat) ― IC = 5 mA, IB = 0.25 mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2 V, IC = 5 mA 0.7 ― 1.3 V Input voltage (OFF) VI (OFF) ― VCE = 5 V, IC = 0.1 mA 0.5 ― 0.8 V Transition frequency fT ― VCE = 10 V, IC = 5 mA ― 250 ― MHz Collector output capacitance Cob ― VCB = 10 V, IE = 0, f = 1 MHz ― 3 ― pF Input resistor R1 ― ― 3.29 4.7 6.11 kΩ Resistor ratio R1/R2 ― ― 0.09 0.1 0.11 Collector cutoff current Marking Test Condition 5 4 6 hFE Rank mA 2 5 4 Q2 76A 1 nA Equivalent Circuit (Top View) Type Name 6 Unit Q1 3 1 2 2 3 2007-11-01 HN7G08FE Q1 IC - VCE -0.5 hFE - IC 10000 -5 COMMON EMITTER VCE = -2V -4 -0.4 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) -6 -3 -0.3 -2 -0.2 -1 -0.1 COMMON EMITTER Ta = 25°C IB=-0.5mA Ta = 100°C 1000 -0.0 25 -25 100 10 -0 -1 -2 -3 -4 -5 -0.1 VCE(sat) - IC BASES-EMITTER SATURATION VOLTAGE VBE(sat.) (V) COLLETOR EMITTER SATURATION VOLTAGE VCE(sat.) (mV) -100 Ta = 100°C -25 25 -1 -1000 COMMON EMITTER IC/IB = 20 Ta = 25℃ -1 -0.1- -0.1 -1 -10 -100 -1000 -0.1 COLLECTOR CURRENT IC (A) -1 -10 -100 -1000 COLLECTOR CURRENT IC (A) IC - VBE -1000 Cob - VCB 100 -100 COLLECTOR OUTPUT CAPACITNCE Cob (pF) COLLECTOR CURRENT IC (mA) -100 VBE(sat) - IC -10 COMMON EMITTER IC/IB = 20 -10 -10 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) -1000 -1 Ta = 100°C -25 -10 25 COMMON EMITTER VCE = -2V -1 0 -0.4 -0.8 -1.2 IE = 0 f = 1MHz Ta = 25℃ 10 1 -0.1 -1.6 -1 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) BASE-EMITTER VOLTAGE VBE (V) 3 2007-11-01 HN7G08FE Q2 4 2007-11-01 HN7G08FE (Q1, Q2 common) COLLECTOR POWER DISSIPATION PC (mW) PC* – Ta 200 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 175 Ta (°C) *:Total rating 5 2007-11-01 HN7G08FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01