DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes FEATURES PINNING • Power dissipation comparable to SOT23 1PS89SB.. PIN • Low forward voltage • Guard ring protected • Ultra small SMD package. 3 14 15 16 1 a1 a1 k1 2 k2 a2 k2 3 k1, a2 k1, k2 a1, a2 1 2 MLC358 Fig.2 APPLICATIONS 1PS89SB14 diode configuration (symbol). • Ultra high speed switching • Voltage clamping 3 • Protection circuits 3 fpage • Blocking diodes. 1 2 MLC359 DESCRIPTION 1 Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING Fig.1 TYPE NUMBER MARKING CODE 1PS89SB14 44 1PS89SB15 43 1PS89SB15 45 1998 Nov 10 2 Top view Fig.3 MBK837 1PS89SB15 diode configuration (symbol). 3 Simplified outline (SC-89; SOT490) and pin configuration. 1 2 MLC360 Fig.4 2 1PS89SB16 diode configuration (symbol). Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode unless otherwise specified VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Ptot total power dissipation (per package) Tamb ≤ 25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode unless otherwise specified VF forward voltage see Fig.5 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.6 2 µA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.7 10 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SC-89 (SOT490) standard mounting conditions. 1998 Nov 10 3 VALUE UNIT 500 K/W Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes GRAPHICAL DATA MSA892 IF (1) IR (µA) (1) (2) (3) (mA) 10 MGL495 103 3 10halfpage handbook, 102 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 10−1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 MGL496 Cd (pF) 10 5 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1998 Nov 10 10 20 VR (V) 30 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 15 0 (3) 4 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 1998 Nov 10 REFERENCES IEC JEDEC EIAJ SC-89 5 EUROPEAN PROJECTION ISSUE DATE 98-10-23 Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Nov 10 6 Philips Semiconductors Preliminary specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes NOTES 1998 Nov 10 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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