HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E (Z) Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRW0202A S17 MPAK Outline 3 2 (Top View) 1 1 Anode 2 Anode 3 Cathode HRW0202A Absolute Maximum Ratings (Ta = 25°C) *1 Item Symbol *2 RRM Repetitive peak reverse voltage V Average rectified current I O*2 *3 Value Unit 20 V 200 mA 3 A Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes 1. Two device total Notes 2. See from Fig.4 to Fig.7 Notes 3. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) *1 Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V I F = 100 mA Reverse current IR — — 50 µA VR = 20V Thermal resistance Rth(j-a) — 350 — °C/W Polyimide board *2 Notes 1. Per one device Notes 2. Polyimide board 3.0 1.5 1.5 1.5 2 0.8 20hx15wx0.8t Unit: mm HRW0202A Main Characteristic 1.0 10 –3 Pulse test 10 10 Reverse current I R (A) 10 Ta = 75°C –2 –3 Ta = 25°C –4 10 10 –5 –6 0 0.1 0.2 0.3 0.4 0.5 0.6 Fig.1 Forward current Vs. Forward voltage 10 10 10 –4 Ta = 75°C –5 Ta = 25°C 10 10 Forward voltage VF (V) 10 –6 –7 –8 0 15 20 5 10 Reverse voltage VR (V) 25 Fig.2 Reverse current Vs. Reverse voltage 2 f = 1MHz Pulse test Capacitance C (pF) Forward current I F (A) 10 Pulse test –1 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRW0202A Main Characteristic 0.25 0A D=1/6 t T t Tj =25°C D= T\ 0.06 Sin( ˘=180°) D=1/3 D=1/2 0.04 DC 0.02 0 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0.08 0.02 0.04 t D= \ T D=5/6 Tj =125°C 0.15 D=2/3 D=1/2 0.10 Sin( ˘=180°) 0.05 0 Vs. Forward current 10 5 15 20 25 Reverse voltage @ @VR @(V) @ @IF @(A) Fig5. Reverse power dissipation Vs. Reverse voltage 0.25 0.10 DC 0.08 Average rectified current Sin( ˘=180°) D=1/2 D=1/3 0.06 D=1/6 0.04 VR=VRRM/2 0.02 Tj =125°C Rth(j-a)=350°C/W Per one device 0 -25 0 25 50 @Io (A) 0.12 @Io (A) T 0.1 0.06 0.08 Fig4. Forward power dissipation Average rectified current t 0.20 0 0 Forward current 4 0V 75 100 125 0.20 DC Sin( ˘=180°) D=1/2 0.15 D=1/3 D=1/6 0.10 V =V /2 RRM 0.05 TjR=125°C Rth(j-a)=350°C/W Two device total 0 -25 0 25 50 75 100 125 Ambient temperature Ta ( °C) Ambient temperature Ta ( °C) Fig.6 Average rectified current Vs. Ambient temperature Fig.7 Average rectified current Vs. Ambient temperature HRW0202A Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit : mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode 3 Cathode + 0.2 1.9 1 Anode 1.1 – 0.1 1 0.95 0 – 0.10 0.1 0.65 +– 0.3 2 0.95 0.3 S17 1.5 3 Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.011 5 HRW0202A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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