HITACHI HRB0103A

HRB0103A
Silicon Schottky Barrier Diode
for Low Voltage High Speed Switching , Rectifying
ADE-208-490(Z)
Rev 0
Apr. 1997
Features
• Low forward voltage drop and suitable for high effifiency forward current.
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRB0103A
E1
CMPAK
Outline
3
2
1
(Top View)
1 NC
2 Anode
3 Cathode
HRB0103A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
VRRM
30
V
Average rectified current
I o*1
100
mA
3
A
*2
Non-Repetitive peak
forward surge current
IFSM
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +150
°C
Note:
Note:
1. See Fig.5
2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.44
V
I F = 100 mA
Reverse current
IR
—
—
50
µA
VR = 30V
2
HRB0103A
Main Characteristic
10 -2
10
-2
Pulse test
Pulse test
10
10
10
10
Reverse current I R (A)
Forward current I F (A)
10
-3
-4
-5
-6
10-7
10
-3
-4
10
10
10
-5
-6
-8
-9
10
-7
0.1
0
0.2
0.4
0.3
10 0
0.5
10
Forward voltage V F (V)
0.05
1.5
D=1/2
Unit: mm
DC
0.04
0.03
0.02
Io
0
0.01
0
tp
T
D=
tp
20
40
60
Fig3. Forward power dissipation
3.0
0.06
0.05
D=5/6
1.5
Unit: mm
D=2/3
0
0.04
VR
D=1/2
tp
T
0.03
D=
tp
sin wave
T
0.02
0.01
T
80 100 120
Average rectified current
DC
0.8
0.07
0
0
20hx15wx0.8t
2.0
2.0
sin wave
D=1/3
Reverse power dissipation Pd (W)
0.8
3.0
Forward power dissipation Pd (W)
0.08
D=1/6
0.06
50
Reverse voltage V R (V)
20hx15wx0.8t
0.07
40
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
0.08
30
20
@ @Io @(mA)
0
5
10
15
20
25
30
Peak reverse voltage @ @VRM @(V)
Vs. Average rectified current Fig4. Reverse power dissipation
Vs. Peak reverse voltage
3
HRB0103A
Main Characteristic
100
DC
80
D=1/6
D=1/3
60
20hx15wx0.8t
0.8
40
Io
0
0
2.0
20
3.0
Average rectified current
@Io (mA)
120
1.5
0
25
Unit: mm
50
sin wave
D=1/2
T
VR=30V
75 100 125 150
Ambient temperature Ta ( °C)
Fig.5 Average rectified current Vs. Ambient temperature
4
tp
D=
tp
T
HRB0103A
Package Dimensions
0.1
0.3 +– 0.05
1.25 ± 0.1
3
E1
1
0.1
0.3 +– 0.05
0.65
1.3 ± 0.2
0.9 ± 0.1
2
0.2
0.1
0.3 +– 0.05
0.65
+ 0.1
0.16 – 0.06
0 - 0.1
1 NC
2 Anode
3 Cathode
0.425
Laser Mark
2.1 ± 0.3
2.0 ± 0.2
0.425
Unit : mm
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
CMPAK
—
SC-70
0.006
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.