HSB226S Silicon Schottky Barrier Diode ADE-208-961(Z) Rev. 0 Jul. 2000 Features • Low reverse current, Low capacitance. • CMPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB226S E7 CMPAK Outline 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB226S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive peak forward surge current IFSM *1 *2 200 mA forward current IF * 50 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 2 Notes: 1. 10msec sine wave 1 pulse 2. Two device total Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 — — 0.33 V IF = 1 mA VF2 — — 0.38 V IF = 5 mA Reverse current IR — — 0.45 µA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note: Per one device Rev.0, Jul. 2000, page 2 of 5 HSB226S 10 1 10 0 10 10 -1 Ta=75°C -2 10 10 10 -3 -4 10 10 10 -6 10 -5 Ta=75°C -6 Ta=25°C -7 -7 10 10 Ta=25°C -5 10 -4 Pulse test Reverse current I R (A) Forward current IF (A) Main Characteristic -8 0 0.2 0.4 1.0 0.8 0.6 Forward voltage VF (V) 10 -8 0 10 20 30 40 Reverse voltage VR (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage Rev.0, Jul. 2000, page 3 of 5 HSB226S Package Dimensions 0.1 0.3 +− 0.05 (0.65) (0.65) 0.2 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +− 0.05 + 0.1 0.16 − 0.06 0 − 0.1 (0.425) 1.25 ± 0.1 0.1 0.3 +− 0.05 2.1 ± 0.3 2.0 ± 0.2 (0.425) Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) Rev.0, Jul. 2000, page 4 of 5 CMPAK Conforms 0.006 g HSB226S Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, Jul. 2000, page 5 of 5