HUASHAN HSBD441

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD441
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -55~150℃
T j ——J unction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 36W
1―Emitter, E
VCBO ——Collector-Base Voltage…………………………… 80V
2―Collector,C
3―Base,B
VCEO —— Collector-Emitter Voltage………………………… 80V
VCES ——Collector-Emitter Voltage ………………………… 80V
VEBO ——Emitter-Base Voltage………………………………… 5V
IC——Collector Current(Pulse)………………………………… 7A
IC——Collector Current(DC)……………………………………
4A
IB——Base Current………………………………………………1A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
ICES
Collector Cut-off Current
*HFE(1) DC Current Gain 15 130 VCE=5V, IC=10mA *HFE(2) DC Current Gain 40 140 VCE=1V, IC=500mA *HFE(3) DC Current Gain 15 VCE=1V, IC=2A *VCE(sat) Collector- Emitter Saturation Voltage 0.8 V IC=2A, IB =0.2A *VBE(on1)
Base-Emitter On Voltage
0.58 V VCE=5V, IC=10mA
*VBE(on2)
Base-Emitter On Voltage
1.5 V VCE=1V, IC=2A
VCEO(sus)
Collector-Emitter Sustaining Voltage
80 V IC=100mA, IB=0
Current Gain-Bandwidth Product
3 ft
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
100 μA VCB=80V, IE=0
1 mA VEB=5V, IC=0
100 μA VCE=80V, VEB=0
MHz VCE=1V, IC=250mA,