NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD441 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg ——Storage Temperature………………………… -55~150℃ T j ——J unction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 36W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 80V 2―Collector,C 3―Base,B VCEO —— Collector-Emitter Voltage………………………… 80V VCES ——Collector-Emitter Voltage ………………………… 80V VEBO ——Emitter-Base Voltage………………………………… 5V IC——Collector Current(Pulse)………………………………… 7A IC——Collector Current(DC)…………………………………… 4A IB——Base Current………………………………………………1A █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current IEBO Emitter Cut-off Current ICES Collector Cut-off Current *HFE(1) DC Current Gain 15 130 VCE=5V, IC=10mA *HFE(2) DC Current Gain 40 140 VCE=1V, IC=500mA *HFE(3) DC Current Gain 15 VCE=1V, IC=2A *VCE(sat) Collector- Emitter Saturation Voltage 0.8 V IC=2A, IB =0.2A *VBE(on1) Base-Emitter On Voltage 0.58 V VCE=5V, IC=10mA *VBE(on2) Base-Emitter On Voltage 1.5 V VCE=1V, IC=2A VCEO(sus) Collector-Emitter Sustaining Voltage 80 V IC=100mA, IB=0 Current Gain-Bandwidth Product 3 ft * Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed 100 μA VCB=80V, IE=0 1 mA VEB=5V, IC=0 100 μA VCE=80V, VEB=0 MHz VCE=1V, IC=250mA,