HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz, MHz,10µs 10µsPulse, Pulse,1% 1%Transistor Duty Duty L-Band Avionics Pulsed Power Transistor 1025-1150 MHz,Pulse, 10µs Pulse, 1% Duty HVV1012-050 1025-1150 MHz, 10µs 1% Duty 1025-1150 MHz, 10µs Pulse, Duty HVV1012-060L-Band PRODUCT OVERVIEW Avionics Pulsed Power1% Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty TM L-Band Avionics Pulsed Power Transistor PACKAGE 1025-1150MHz, 10μsPACKAGE Pulse, 1% Duty PACKAGE PACKAGE for DME and TCAS Apllications DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The The high high power power HVV1012-060 HVV1012-060 device device isis aa high high voltage voltage silicon silicon enhancement enhancement mode mode RF RF transistor transistor The high power HVV1012-060 device is a high The high power HVV1012-060 device is a high DESCRIPTION DESCRIPTION PACKAGE PACKAGE PACKAGE • • 48V 48V Supply Supply Voltage Voltage • ••High Power Gain Excellent Ruggedness Excellent Ruggedness The Thedevice deviceresides residesininaatwo-lead two-leadmetal metalflanged flanged package package with with crystal polymer polymer lid. lid. The The The device resides incrystal a two-lead metal flanged The device resides in liquid aliquid two-lead metal flanged The device resides in astyle two-lead metal NI-400 NI-400 package package style is is qualified qualified for for gross gross package with liquid crystal polymer lid. The The device resides in acrystal two-lead metal flanged package package with liquid polymer lid. flanged The package with liquid crystal lid. The leak leak test test –style – MIL-STD-750D, MIL-STD-750D, Method Method 1071.6, 1071.6, NI-400 package style is qualified for gross The device resides in a two-lead metal flanged NI-400 package is qualified for gross with liquid crystal polymer lid. Thepolymer HV400 package style is NI-400 package is qualified for gross Test Test Condition Condition C. C. leak test – style MIL-STD-750D, Method package with liquid crystal polymer lid. The1071.6, leak test – MIL-STD-750D, Method 1071.6, qualified for gross leakstyle test – MIL-STD-883, Method 1014. leak test – C.MIL-STD-750D, Method NI-400 package for 1071.6, gross Test Condition C. is qualified Test Condition Test Condition C. leak test – MIL-STD-750D, Method 1071.6, RUGGEDNESS RUGGEDNESS Test Condition C. in •48V Power Gain ••High Ruggedness •Excellent 48V Supply High Power GainVoltage Supply Voltage ••Excellent 48V Supply Voltage • Ruggedness Excellent Ruggedness ABSOLUTE ABSOLUTEMAXIMUM MAXIMUMRATINGS RATINGS •48V 48V Supply Voltage • Supply Voltage ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ar Theinnovative innovative Semiconductor Company! Semiconductor Company! The The i nnovative Semiconductor Company! innovative innovative Semiconductor Semiconductor Company! Company! The The tothe 1150 MHz. FEATURES frequency range from 1025MHz to 1150MHz. FEATURES FEATURES •• High HighPower PowerGain Gain FEATURES •• Power Excellent Excellent Ruggedness Ruggedness High Power Gain Features • High Gain y designed designed for for L-Band L-Band pulsed pulsedRF radar radar applications voltage silicon enhancement mode RF The high power HVV1012-060 device isapplications atransistor high voltage silicon enhancement mode transistor operating operating over over the the frequency frequency range range from from 1025 1025MHz MHz designed forenhancement L-Band pulsed radar applications voltage silicon mode RF transistor designed for L-Band pulsed radar applications The high power HVV1012-060 device is a high The highfor power HVV1012-060 device isapplications a high voltage to to1150 1150 MHz. MHz. operating over the frequency range from 1025 MHz designed L-Band pulsed radar operating over the frequency range from 1025 MHz voltage silicon enhancement mode RF transistor to 1150 MHz. operating over frequency range from 1025 MHz for silicon mode RFradar transistor designed to 1150 MHz. enhancement designed for the L-Band pulsed applications to 1150 MHz. L-Band pulsed applications operating over theavionics frequency range fromoperating 1025 MHzover FEATURES FEATURES ABSOLUTE Symbol Symbol MAXIMUM Parameter Parameter RATINGSValue Value ABSOLUTE MAXIMUM RATINGS Parameter Value VSymbol VDSS Drain-Source Drain-Source Voltage Voltage 105 105 DSS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit m Unit Unit Unit VV Parameter VVGS Gate-Source Gate-Source Voltage Voltage 10 10 Drain-Source Voltage 105 GS DSS VDSS Symbol Drain-Source Voltage 105Value V UnitVV VDSS Drain-Source Voltage 105410 V AV Parameter V Gate-Source Voltage IDSX IDSX Drain DrainCurrent Current 4 V Unit A GS VGS Symbol Gate-Source Voltage 10 Value VVGS Gate-Source Voltage 10 95 Drain-Source Voltage 105 V DSS I Drain Current 4 A P P Power Power Dissipation Dissipation 625 625 W W DDSX DDrain Current IDSX 4 A IV Drain Current 4 A Gate-Source Voltage 10 V DSX GS T T Storage Storage Temperature Temperature -65 -65 to to °C °C P Power Dissipation 625 W SD S Power Dissipation PD 625 W PIDDSXTS Power Dissipation 625 W °C Drain Current 4 +200 A +200 Storage Temperature -65 to TS Storage Temperature -65 to °C Power Dissipation 625 to TPSDT2TJ J Storage Temperature -65 °C °C +200 Junction Junction 200 W °C +200 200 +200 TS T Storage Temperature -65 to °C Temperature Temperature Junction 200 °C J Junction TJ 200 °C +200 TJ Junction 200 °C Temperature Temperature TJ Junction 200 °C Temperature Temperature eli THERMAL THERMALCHARACTERISTICS CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL Symbol SymbolCHARACTERISTICS Parameter Parameter Max Max THERMAL CHARACTERISTICS 11 Parameter Max LJSymbol LJ Thermal ThermalResistance Resistance 0.28 0.28 Unit Unit Unit °C/W °C/W JCJCParameter Symbol Max Unit Symbol Parameter Max Unit 1 Thermal Resistance 0.28 °C/W 1LJJCThermal LJJC1 LJSymbol Resistance 0.28 °C/W Parameter Max Unit Thermal Resistance 0.28 °C/W JC LJJC1 Thermal Resistance 0.28 °C/W RUGGEDNESS RUGGEDNESS RUGGEDNESS RUGGEDNESS The The HVV1012-060 HVV1012-060 device device isis capable capable of of RUGGEDNESS withstanding withstanding an an output output load load mismatch mismatch The device is capable ofis withstanding The HVV1012-060 device capable of The HVV1012-060 HVV1012-060 device is capable of The corresponding HVV1012-060 device is load capable of corresponding to to a a 20:1 20:1 VSWR VSWR at at rated rated output output withstanding an output mismatch anwithstanding output load mismatch corresponding to a 20:1 VSWR an output load mismatch The HVV1012-060 device is capable ofoutput withstanding an operating load mismatch power power and and operating voltage voltage across across the the corresponding tooutput a 20:1 VSWR rated to a 20:1 VSWR at ratedat output atcorresponding rated output power and operating voltage across withstanding an output load mismatch corresponding to a operating 20:1 VSWR at rated output frequency frequency band band of of operation. operation. power and voltage across the power and operating voltage across the thefrequency band ofaoperation. corresponding to 20:1 VSWR at rated output power and operating voltage the frequency band ofacross operation. Symbol Symbol Parameter Parameter Test TestCondition Condition Max Max Units Units frequency band of operation. power and operating voltage across the 1 1 frequency band of =60W operation. LMT LMT Load Load PTest P 60W 20:1 20:1 VSWR OUT OUT= Symbol Parameter Condition Max Units Symbol Parameter Test Condition Max Units VSWR frequency band of 1 Parameter Symbol Test Condition operation. Max Units Mismatch Mismatch 1 LMT LoadPOUT = 60W P= = 60W 20:1 20:1 OUT LMT Load VSWR VSWR FF =1150MHz 1150MHz Symbol Parameter Test Max LMT1 LoadTolerance POUTCondition = 60W 20:1 Units VSWR Tolerance Mismatch Mismatch 1 F = 1150MHz LMT Load P = 60W 20:1 VSWR Mismatch F = 1150MHz OUT Tolerance F = 1150MHz Tolerance Mismatch Tolerance F = 1150MHz Tolerance ELECTRICAL ELECTRICAL CHARACTERISTICS CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Symbol Parameter Parameter Pr Conditions Conditions Typ Typ Units Units 2mA 102 Symbol Parameter Conditions Typ Units V V Drain-Source Drain-Source Breakdown Breakdown VGS=0V,ID=1mA VGS=0V,ID=1mA 110 110 V V BR(DSS) BR(DSS) Symbol Conditions Typ Units Symbol Parameter Parameter Conditions Typ Units <50 V Drain-Source Breakdown VGS=0V,ID=1mA 110V Units µA V IDSS IDSS Drain DrainLeakage Leakage Current Current VGS=0V,ID=1mA VGS=0V,VDS=48V VGS=0V,VDS=48V <10 <10 µA Symbol Parameter Conditions Typ BR(DSS) VBR(DSS) Drain-Source Breakdown 110 VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V VGS=0V,VDS=48V <10 µA IGSS Gate Gate Leakage Leakage Current Current VGS=5V,VDS=0V VGS=5V,VDS=0V <1 <1 µA Drain-Source Breakdown VGS=0V,ID=1mA 110 VµA µA GSS BR(DSS) IDSS IV Drain Leakage Current <10 Drain Leakage Current VGS=0V,VDS=48V <10 DSS 1 1 GIGPGSS Power Power Gain Gain P P =60W,F=1025,1150MHz =60W,F=1025,1150MHz 23 23 dB dB Gate Leakage Current VGS=5V,VDS=0V <1 Drain Leakage Current VGS=0V,VDS=48V <10 µA P OUT OUT DSS IGSS IIGSS GateGate Leakage Current VGS=5V,VDS=0V <1 µA Leakage Current VGS=5V,VDS=0V <1 µA µA 11 Gate Leakage VGS=5V,VDS=0V G Power GainCurrent POUT =60W,F=1025,1150MHz23<1 dB IRL Input Input Return Return Loss Loss P=60W,F=1025,1150MHz =60W,F=1025,1150MHz 923 9 dBµA dB dB 1IRL P OUT GP1 GIPGSS Power Gain P =60W,F=1025,1150MHz Power Gain P 23 dB OUT OUT 1 11 1 1 GPdž1IRL Power Gain P =60W,F=1025,1150MHz 23 dB Input Return Loss P =60W,F=1025,1150MHz 9 dž Drain Drain Efficiency Efficiency P =60W,F=1025,1150MHz 52 52 % % OUT OUT OUT IRL IRL D1D Input Return LossLoss POUTP=60W,F=1025,1150MHz 9 9 dBdB dB Input Return OUT=60W,F=1025,1150MHz 111 1 IRL Input Return Loss P =60W,F=1025,1150MHz 9 dB dB 1 PD PD Pulse Pulse Droop Droop P P =60W,F=1025,1150MHz <0.3 <0.3 dB dž Drain Efficiency =60W,F=1025,1150MHz 52 % OUT OUT OUT džD džD 1 D Drain Efficiency POUTP=60W,F=1025,1150MHz 52 52 %% Drain Efficiency OUT=60W,F=1025,1150MHz Drain Efficiency P =60W,F=1025,1150MHz 52 % 1 džD1PD1 OUT Pulse Droop P =60W,F=1025,1150MHz <0.3 OUT PD PD 1 Pulse Droop POUTP=60W,F=1025,1150MHz <0.3 dBdB dB Pulse Droop <0.3 OUT=60W,F=1025,1150MHz PD Droop Pulse POUT=60W,F=1025,1150MHz <0.3 dB ==25mA 1.) Under UnderPulse PulsePulse Conditions: Conditions: PulseWidth Width==10µsec, 10µsec, Pulse PulseDuty DutyCycle Cycle==1% 1%at atVDD VDD ==48V, 48V,IDQ IDQ 25mA 11.) Under Pulse Conditions: Pulse Width = 10μsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA Under Pulse Conditions: Pulse = 10µsec, Pulse Duty 1% at VDD = 48V, IDQ = 25mA 1.) Under Pulse Conditions: Pulse Width =Width 10µsec, Pulse Duty Cycle =Cycle 1% at=VDD = 48V, IDQ = 25mA 1.)21.) Under Pulse Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA TCASE Conditions: = 25° 1.)Rated UnderatPulse Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA HVVi HVViSemiconductors, Semiconductors,Inc. Inc. stst HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. St. St. Suite Suite 100 100 10235 10235 S. S. 51 51 Semiconductors, HVViHVVi Semiconductors, Inc. Inc. HVVi Semiconductors, Inc. st st51st st S. 10235 St. Suite 100 St. Suite 100 10235 S. 51 Phoenix, Phoenix, Az. Az. 85044 85044 stSt. Suite 10235 51 100 100 10235 S. 51S.S.St. St. Suite 100 10235 51Suite Phoenix, AZ. Phoenix, Az.85044 85044 Phoenix, Az. Phoenix, Az. 85044 Phoenix, Az.85044 85044 For Foradditional additionalinformation, information,visit: visit:www.hvvi.com www.hvvi.com For additional information: For additional information, visit: www.hvvi.com HVVi HVVi Semiconductors, Semiconductors, Inc. Inc. Confidential Confidential additional information, visit: www.hvvi.com For For additional information, visit: www.hvvi.com For(866) additional information, visit: www.hvvi.com Tel: 429-HVVi (4884) or visit www.hvvi.com HVVi Semiconductors, Inc. Confidential © © 2008 2008 HVVi HVVi Semiconductors, Semiconductors, Inc. Inc. All AllRights RightsReserved. Reserved. HVVi Semiconductors, Inc. Confidential HVVi Semiconductors, Inc.Inc. Confidential HVVi Semiconductors, Confidential © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc.Inc. AllAll Rights Reserved. © 2008 HVVi Semiconductors, Rights Reserved. EG-01-PO03X2 EG-01-PO03X2 EG-01-PO03X5 EG-01-PO03X2 06/10/08 06/10/08 EG-01-PO03X2 EG-01-PO03X2 EG-01-PO03X2 10/13/08 06/10/08 11 06/10/08 06/10/08 06/10/08 1 1 1 11 The innovative Semiconductor Company! HVV1012-060 PRODUCT OVERVIEW TM L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications PACKAGE DIMENSIONS Drain GATE SOURCE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO03X5 10/13/08 2