. IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Intended for PC133 applications • Clock Frequency: 133MHz • Clock Cycle: 7.5ns • Clock Assess Time: 5.4ns • Inputs and outputs are LVTTL (3.3V) compatible • Single 3.3V ± 0.3V Power Supply • Single Pulsed RAS interface • SDRAMs have 4 internal banks • Module has 2 Physical banks • Fully Synchronous to positive Clock Edge • Data Mask for Byte Read/Write control • Auto Refresh (CBR) and Self Refresh • Automatic and controlled Precharge commands • Programmable Operation: - CAS Latency: 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page (FullPage supports Sequential burst only) - Operation: Burst Read and Write or Multiple Burst Read with Single Write • Suspend Mode and Power Down Mode • 12/9/2 Addressing (Row/Column/Bank) • 4096 Refresh cycles distributed across 64ms • Serial Presence Detect with Write Protect • Card size: 5.25" x 1.375" x 0.158" max • Gold contacts • DRAMs in TSOP Type II Package Description IBM13N16644HCB / IBM13N16734HCB are unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx64 and 16Mx72 high-speed memory arrays and are configured as two 8M x 64/72 physical tanks. The DIMMs use sixteen (16Mx64) or eighteen(16Mx72) 8Mx8 SDRAMs in 400mil TSOP II packages. The DIMMs achieve high-speed datatransfer rates of up to 133MHz by employing a prefetch/pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power. All control, address, and data input/output circuits are synchronized with the positive edge of the externally supplied clock inputs. All inputs are sampled at the positive edge of each externally supplied clock (CK0 - CK3). Internal operating modes are defined by combinations of RAS, CAS, WE, S0-S3, DQMB, and CKE0-CKE1 signals. A command decoder initiates the necessary timings for each operation. A 14-bit address bus accepts address information in a row/column multiplexing arrangement. Prior to any Access operation, the CAS latency, burst type, burst length, and burst operation type must be programmed into the DIMM by address inputs A0-A9 during the Mode Register Set cycle. The DIMM uses serial presence detects implemented via a serial EEPROM using the two pin IIC protocol. The first 128 bytes of serial PD data are used by the DIMM manufacturer. The last 128 bytes are available to the customer. All IBM 168-pin DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint. Related products include both EDO DRAM and SDRAM unbuffered DIMMs in both non-parity x64 and ECC-Optimized x72 configurations. Card Outline (Front) 1 (Back) 85 09K3605.F38386 12/99 10 11 94 95 40 41 124 125 84 168 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 1 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Pin Description CK0 - CK3 Clock Inputs CKE0 - CKE1 DQ0 - DQ63 Clock Enables Data Input/Output CB0 - CB7 Check Bit Data Input/Output RAS Row Address Strobe CAS Column Address Strobe VDD WE Write Enable VSS Ground S0, S1, S2, S3 Chip Selects NC No Connect A0 - A9, A11 DQMB0 - DQMB7 Data Mask Power (3.3V) Address Inputs SCL Serial Presence Detect Clock Input A10 /AP Address Input/Autoprecharge SDA Serial Presence Detect Data Input/Output BA0, BA1 SDRAM Bank Address Inputs SA0-2 Serial Presence Detect Address Inputs WP Serial Presence Detect Write Protect Input Pinout Pin# Front Side Pin# Back Side Pin# Front Side Pin# Back Side Pin# Front Side Pin# Back Side Pin# Front Side Pin# Back Side 1 VSS 85 VSS 22 CB1 106 CB5 43 VSS 127 VSS 64 VSS 148 VSS 2 DQ0 86 DQ32 23 VSS 107 VSS 44 NC 128 CKE0 65 DQ21 149 DQ53 3 DQ1 87 DQ33 24 NC 108 NC 45 S2 129 S3 66 DQ22 150 DQ54 4 DQ2 88 DQ34 25 NC 109 NC 46 DQMB2 130 DQMB6 67 DQ23 151 DQ55 5 DQ3 89 DQ35 26 VDD 110 VDD 47 DQMB3 131 DQMB7 68 VSS 152 VSS 6 VDD 90 VDD 27 WE 111 CAS 48 NC 132 NC 69 DQ24 153 DQ56 7 DQ4 91 DQ36 28 DQMB0 112 DQMB4 49 VDD 133 VDD 70 DQ25 154 DQ57 8 DQ5 92 DQ37 29 DQMB1 113 DQMB5 50 NC 134 NC 71 DQ26 155 DQ58 DQ59 9 DQ6 93 DQ38 30 S0 114 S1 51 NC 135 NC 72 DQ27 156 10 DQ7 94 DQ39 31 NC 115 RAS 52 CB2 136 CB6 73 VDD 157 VDD 11 DQ8 95 DQ40 32 VSS 116 VSS 53 CB3 137 CB7 74 DQ28 158 DQ60 12 VSS 96 VSS 33 A0 117 A1 54 VSS 138 VSS 75 DQ29 159 DQ61 13 DQ9 97 DQ41 34 A2 118 A3 55 DQ16 139 DQ48 76 DQ30 160 DQ62 14 DQ10 98 DQ42 35 A4 119 A5 56 DQ17 140 DQ49 77 DQ31 161 DQ63 15 DQ11 99 DQ43 36 A6 120 A7 57 DQ18 141 DQ50 78 VSS 162 VSS 16 DQ12 100 DQ44 37 A8 121 A9 58 DQ19 142 DQ51 79 CK2 163 CK3 17 DQ13 101 DQ45 38 A10/AP 122 BA0 59 VDD 143 VDD 80 NC 164 NC BA1 123 A11 60 DQ20 144 DQ52 81 WP 165 SA0 61 NC 145 NC 82 SDA 166 SA1 NC 83 SCL 167 SA2 NC 84 VDD 168 VDD 18 VDD 102 VDD 39 19 DQ14 103 DQ46 40 VDD 124 VDD DQ47 41 VDD 125 CK1 CB4 42 CK0 126 NC 20 21 DQ15 CB0 104 105 62 63 NC 146 *CKE1 147 Note: All pin assignments are consistent for all 8-byte unbuffered versions. Check Bits (CB0 - CB7) are applicable only to the x72 DIMM; for the x64 DIMM these pins are no connects (NC). * CKE1 is terminated with a 10k ohm pullup resistor. Ordering Information Part Number Organization IBM13N16644HCB-75AT 16Mx64 IBM13N16734HCB-75AT 16Mx72 IBMB3N16644HCB-75AT 16Mx64 IBMB3N16734HCB-75AT 16Mx72 Clock Cycle Leads Dimension Power 7.5ns Gold 5.25" x 1.375" x 0.158" 3.3V Notes 1 1. Functionally equivalent assembly to IBM13N16644HCB and IBM13N16734HCB, manufactured using SDRAMs from a SDRAM technology licensee. SPD data reflects the IBM13N16644HCB and IBM13N16734HCB part numbers. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 2 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module 16Mx64 SDRAM DIMM Block Diagram (2-Bank, 8Mx8 SDRAMs) S0 S1 DQMB0 * DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQMB4 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D0 CS D8 DQMB1 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D4 CS D12 DQMB5 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D1 S2 D9 S3 DQMB2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D2 D10 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D5 CS D13 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D6 CS D14 DQMB7 DQMB3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQMB6 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D3 CS D11 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D7 CS D15 Note: Exact DQ wiring may differ from that shown above. CK0 CLK: SDRAMs D0 - D1, D4 - D5, 3.3pF Cap CK1 CLK: SDRAMs D8 - D9, D12 - D13, 3.3pF Cap CK2 CLK: SDRAMs D2 - D3, D6 - D7, 3.3pF Cap CK3 CLK: SDRAMs D10 - D11, D14 - D15, 3.3pF Cap A0 - A11 10K CKE1 CKE: SDRAMs D8 - D15 A0-A11: SDRAMs D0 - D15 BA0 A13/BS0: SDRAMs D0 - D15 BA1 A12/BS1: SDRAMs D0 - D15 Serial PD RAS VDD .33µF VSS VDD D0 - D15 0.1µF D0 - D15 RAS: SDRAMs D0 - D15 CAS CAS: SDRAMs D0 - D15 CKE0 CKE: SDRAMs D0 - D7 WE WE: SDRAMs D0 - D15 SCL WP 47K SDA A0 A1 A2 SA0 SA1 SA2 * All resistor values are 10 ohms except as shown. 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 3 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module 16Mx72 SDRAM DIMM Block Diagram (2-Bank, 8Mx8 SDRAMs) S1 S0 DQMB0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQMB4 * DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D0 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 D9 DQMB1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D1 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D10 CS DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 D2 D11 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 CS D3 CS D4 A0-A11: SDRAMs D0 - D17 A13/BS0: SDRAMs D0 - D17 A12/BS1: SDRAMs D0 - D17 D0 - D17 VDD .33µF VSS 0.1µF D0 - D17 * All resistor values are 10 ohms except as shown. DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D6 CS D15 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D7 CS D16 CS DQMB7 D12 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS D8 CS D17 CS Note: Exact DQ wiring may differ from that shown above. D13 CK0 CLK: SDRAMs D0 - D2, D5 - D6 CK1 CLK: SDRAMs D9 - D11, D14 - D15 CK2 CLK: SDRAMs D3 - D4, D7 - D8, 3.3pF Cap. CK3 CLK: SDRAMs D12 - D13, D16 - D17, 3.3pF Cap. VDD Serial PD 10K CKE1 RAS CKE: SDRAMs D9 - D17 RAS: SDRAMs D0 - D17 CAS CAS: SDRAMs D0 - D17 CKE0 CKE: SDRAMs D0 - D8 WE WE: SDRAMs D0 - D17 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 4 of 18 D14 DQMB6 DQMB3 BA0 BA1 D5 CS DQM CS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQMB2 A0 - A11 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS DQMB5 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 S3 S2 DQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 SCL WP 47K SDA A0 A1 A2 SA0 SA1 SA2 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Input/Output Functional Description Symbol Type Signal Polarity Function CK0 - CK3 Input Pulse Positive Edge The system clock inputs. All of the SDRAM inputs are sampled on the rising edge of their associated clock. CKE0, CKE1 Input Level Active High Activates the SDRAM CLK signals when high and deactivates them when low. By deactivating the clocks, CKE0/CKE1 low initiates the Power Down mode, Suspend mode, or the Self Refresh mode. S0 - S3 Input Pulse Enables the associated SDRAM command decoder when low and disables the comActive Low mand decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue. RAS, CAS WE Input Pulse Active Low When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the operation to be executed by the SDRAM. BA0, BA1 Input Level A0 - A9 A10/AP A11 Input DQ0 - DQ63, Input CB0 - CB7 Output — Selects which SDRAM bank is to be active. Level — During a Bank Activate command cycle, A0-A11 defines the row address (RA0-RA11) when sampled at the rising clock edge. During a Read or Write command cycle, A0-A8 defines the column address (CA0-CA8) when sampled at the rising clock edge. In addition to the column address, AP is used to invoke Autoprecharge operation at the end of the Burst Read or Write cycle. If AP is high, autoprecharge is selected and BA0/BA1 define the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to precharge. Level — Data and Check Bit Input/Output pins operate in the same manner as on conventional DRAMs. The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. In Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output enable. In Write mode, DQM has a latency of zero and operates as a byte mask by allowing input data to be written if it is low but blocks the Write operation if DQM is high. DQMB0 DQMB7 Input Pulse Active High SA0 - SA2 Input Level — Address inputs. Connected to either VDD or VSS on the system board to configure the Serial Presence Detect EEPROM address. SDA Input Output Level — Serial Data. Bidirectional signal used to transfer data into and out of the Serial Presence Detect EEPROM. Since the SDA signal is Open Drain/Open Collector at the EEPROM, a pull-up resistor is required on the system board. SCL Input Pulse — Serial Clock. Used to clock all Serial Presence Detect data into and out of the EEPROM. Since the SCL signal is inactive in the “high” state, a pull-up resistor is recommended on the system board. WP Input Level Active High Hardware Write Protect. When WP is active, writing to the EEPROM array is inhibited. On the DIMM, this input is connected to the EEPROM Write Protect input and is also tied to ground through a 47K ohm pull-down resistor. VDD, VSS Supply 09K3605.F38386 12/99 Power and ground for the module. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 5 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Serial Presence Detect (Part 1 of 2) Byte # Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 4 5 Number of DIMM Banks 6-7 SPD Entry Value Serial PD Data Entry (Hexadecimal) 128 80 256 08 SDRAM 04 Number of Row Addresses on Assembly 12 0C Number of Column Addresses on Assembly 9 09 Data Width of Assembly 16M x 64 16M x 72 2 02 x64 4000 x72 4800 8 Voltage Interface Level of this Assembly LVTTL 01 9 SDRAM Device Cycle Time at CL=3 7.5ns 75 10 SDRAM Device Access Time from Clock at CL=3 5.4ns 54 11 DIMM Configuration Type 12 Refresh Rate/Type 13 Primary SDRAM Device Width 14 Error Checking SDRAM Device Width 15 SDRAM Device Attr: Min Clk Delay, Random Col Access 16 17 16M x 64 Non-Parity 00 16M x 72 ECC 02 SR/1x(15.625us) 80 x8 08 16M x 64 N/A 00 16M x 72 x8 08 1 Clock 01 SDRAM Device Attributes: Burst Lengths Supported 1,2,4,8, Full Page 8F SDRAM Device Attributes: Number of Device Banks 4 04 18 SDRAM Device Attributes: CAS Latencies Supported 2, 3 06 19 SDRAM Device Attributes: CS Latency 0 01 20 SDRAM Device Attributes: WE Latency 21 SDRAM Module Attributes 22 SDRAM Device Attributes: General 23 0 01 Unbuffered 00 Wr-1/Rd Burst, Precharge All, Auto-Precharge, VDD +/- 10% 0E Minimum Clock Cycle at CL=2 15.0ns F0 24 Maximum Data Access Time (tAC) from Clock at CL=2 9.0ns 90 25 Minimum Clock Cycle Time at CL=1 N/A 00 26 Maximum Data Access Time (tAC) from Clock at CL=1 N/A 00 27 Minimum Row Precharge Time (tRP) 20ns 14 28 Minimum Row Active to Row Active delay (tRRD) 15ns 0F 29 Minimum RAS to CAS delay (tRCD) 20ns 14 30 Minimum RAS Pulse width (tRAS) 45ns 2D 1. 2. 3. 4. 5. 6. 7. 8. Note s 1 1 See the AC output load circuit in the AC Characteristics section below cc = Checksum Data byte, 00-FF (Hex) “R” = Alphanumeric revision code, A-Z, 0-9 rr = ASCII coded revision code byte “R” yy = Binary coded decimal year code, 00-99 (Decimal) ➔ 00-63 (Hex) ww = Binary coded decimal week code, 01-52 (Decimal) ➔ 01-34 (Hex) ss = Serial number data byte, 00-FF (Hex) For PC100 applications only. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 6 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Serial Presence Detect (Part 2 of 2) Byte # Description SPD Entry Value Serial PD Data Entry (Hexadecimal) 31 Module Bank Density 64MB 10 32 Address and Command Setup Time Before Clock 1.5ns 15 33 Address and Command Hold Time After Clock 0.8ns 08 34 Data Input Setup Time Before Clock 1.5ns 15 35 Data Input Hold Time After Clock 36 - 61 Reserved 62 SPD Revision 63 Checksum for bytes 0 - 62 64 - 71 72 73 - 90 Module Part Number 91 - 92 Module Revision Code 93 - 94 Module Manufacturing Date 95 - 98 Module Serial Number 127 02 cc IBM A400000000000000 Toronto, Canada 91 2 Vimercate, Italy 53 16M x 64, -75A ASCII ‘13N16644HC”R”-75AT’ 31334E31363634344843rr 2D373541542020 16M x 72, -75A ASCII ‘13N16734HC”R”-74AT’ 31334E31363733344843rr 2D373541542020 rr20 3, 4 Year/Week Code yyww 5, 6 Serial Number ssssssss 7 Undefined 00 Module Supports this Clock Frequency Attributes for Clock Frequency defined in byte 126 3, 4 “R” plus ASCII blank 100 MHz 64 8 CK0, CK1, CK2, CK3, CL3, concurrent AP F5 8 Undefined 00 128 - 255 Open for Customer Use 1. 2. 3. 4. 5. 6. 7. 8. 00 2 99 - 125 Reserved 126 08 Checksum Data Manufacturers’ JEDEC ID Code Module Manufacturing Location 0.8ns Undefined Note s See the AC output load circuit in the AC Characteristics section below cc = Checksum Data byte, 00-FF (Hex) “R” = Alphanumeric revision code, A-Z, 0-9 rr = ASCII coded revision code byte “R” yy = Binary coded decimal year code, 00-99 (Decimal) ➔ 00-63 (Hex) ww = Binary coded decimal week code, 01-52 (Decimal) ➔ 01-34 (Hex) ss = Serial number data byte, 00-FF (Hex) For PC100 applications only. 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 7 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Absolute Maximum Ratings Symbol Parameter VDD Power Supply Voltage VIN Input Voltage VOUT TA TSTG PD IOUT Rating Units Notes -0.3 to +4.6 SDRAM Devices -0.3 to VDD+0.3 Serial PD Device -0.3 to +6.5 SDRAM Devices -0.3 to VDD+3.3 Serial PD Device -0.3 to +6.5 Output Voltage Operating Temperature (ambient) Storage Temperature V 1 0 to +70 °C 1 -55 to +125 °C 1 W 1 mA 1 x64 8.4 x72 9.4 Power Dissipation Short Circuit Output Current 50 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended DC Operating Conditions (TA= 0 to 70˚C) Rating Symbol Parameter Min. Typ. Max. Units Notes VDD Supply Voltage 3.0 3.3 3.6 V 1 VIH Input High Voltage 2.0 — VDD + 0.3 V 1, 2 VIL Input Low Voltage -0.3 — 0.8 V 1, 3 1. All voltages referenced to VSS. 2. VIH(max) = VDD + 1.2V for pulse width ≤ 5ns. 3. VIL(min) = VDD - 1.2V for pulse width ≤ 5ns. Capacitance (TA= 25°C, f=1MHz, VDD= 3.3V ± 0.3V) Organization Symbol Parameter Units x64 Max. x72 Max. CI1 Input Capacitance (A0 - A9, A10/AP, A11, BA0, BA1, RAS, CAS, WE) 104 112 pF CI2 Input Capacitance (CKE0 - CKE1) 54 58 pF CI3 Input Capacitance (S0 - S3) 30 33 pF CI4 Input Capacitance (CK0 - CK3) 40 40 pF CI5 Input Capacitance (DQMB0 - DQMB7) 17 21 pF CI6 Input Capacitance (SA0 - SA2, SCL, WP) 9 9 pF CIO1 Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7) 17 17 pF CIO2 Input/Output Capacitance (SDA) 11 11 pF ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 8 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module DC Output Load Circuit 3.3 V 1200Ω VOH (DC) = 2.4V, IOH = -2mA Output VOL (DC) = 0.4V, IOL = 2mA 50pF 870Ω Output Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V) x64 Symbol II(L) Parameter Input Leakage Current, any input (0.0V ≤ VIN ≤ VDD), All Other Pins Not Under Test = 0V IO(L) Output Leakage Current (DOUT is disabled, 0.0V ≤ VOUT ≤ VDD) x72 Min. Max. Min. Max. RAS, CAS, WE, A0-A9, A10/AP, A11, BA0, BA1 -80 +80 -90 +90 CK0, CK1 -20 +20 -25 +25 CK2, CK3 -20 +20 -20 +20 CKE0, CKE1 -40 +40 -45 +45 S0, S1 -20 +20 -25 +25 S2, S3 -20 +20 -20 +20 DQMB1, 5 -10 +10 -15 +15 DQMB0, 2, 3, 4, 5, 6, 7 -10 +10 -10 +10 DQ0 - 63 -10 +10 -10 +10 CB0 - 7 0 0 -10 +10 SA0, SA1, SA2, SCL, SDA -10 +10 -10 +10 WP -10 +50 -10 +50 DQ0 - 63 -10 +10 -10 +10 CB0 - 7 0 0 -10 +10 SDA -10 +10 -10 +10 - 2.4 - VOH Output Level (LVTTL) Output “H” Level Voltage (IOUT = -2.0mA) 2.4 VOL Output Level (LVTTL) Output “L” Level Voltage (IOUT = +2.0mA) - Units Notes µA µA V 0.4 - 1 0.4 1. See DC output load circuit. 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 9 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Operating, Standby, and Refresh Currents Parameter Operating Current tRC = tRC(min), tCK = min Active-Precharge command cycling without Burst operation Symbol (TA= 0 to +70°C, VDD= 3.3V ± 0.3V) Organization Test Condition -x64 x72 Units Notes ICC1 1 bank operation tRC = tRC(min), tCK = min Active-Precharge command cycling without Burst operation 920 1035 mA 1, 3, 4 ICC2P CKE0, CKE1 ≤ VIL(max), tCK = min, S0 - S3 =VIH(min) 16 18 mA 2 ICC2PS CKE0, CKE1 ≤ VIL(max), tCK = Infinity, S0 - S3 =VIH(min) 16 18 mA 2 ICC2N CKE0, CKE1 ≥ VIH(min), tCK = min, S0 - S3 =VIH (min) 560 630 mA 2, 5 CKE0, CKE1 ≥ VIH(min), tCK = ICC2NS Infinity, S0 - S3 =VIH (min) 96 108 mA 2, 6 ICC3N CKE0, CKE1 ≥ VIH(min), tCK = min, S0 - S3 =VIH (min) 640 720 mA 2, 5 ICC3P CKE0, CKE1 ≤ VIL(max), tCK = min, S0 - S3 =VIH (min) (Power Down Mode) 48 54 mA 2, 7 Burst Operating Current ICC4 tCK = min, Read/ Write command cycling, multiple banks active, gapless data, BL = 4 1280 1440 mA 1, 4, 8 Auto (CBR) Refresh Current ICC5 tCK = min, CBR command cycling 1480 1665 mA 1 Self Refresh Current ICC6 CKE0, CKE1 ≤ 0.2V 16 18 mA 2 Serial PD Device Standby Current ISB VIN = GND or VDD 30 30 µA 9 SCL Clock Frequency = 100KHz 1 1 mA 10 Precharge Standby Current in Power Down Mode Precharge Standby Current in NonPower Down Mode No Operating Current (Active state: 4 bank) Serial PD Device Active Power Supply Current ICCA 1. The specified values are for one DIMM bank in the specified mode, and the other DIMM bank in Active Standby (ICC3N). 2. The specified values are for both DIMM banks operating in the specified mode. 3. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of tCK and tRC. Input signals are changed up to three times during tRC(min). 4. The specified values are obtained with the output open. 5. Input signals are changed once during three clock cycles. 6. Input signals are stable. 7. Active Standby current will be higher if clock suspend is entered during a Burst Read cycle (add 1mA per DQ). 8. Input signals are changed once during tCK(min). 9. VDD = 3.3V. 10. As follows: • Input pulse levels VDD x 0.1 to VDD x 0.9 • Input rise and fall times 10ns • Input and output timing levels VDD x 0.5 • Output load 1 TTL gate and CL=100pf ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 10 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module AC Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V) 1. An initial pause of 200µs, with DQMB0-7 and CKE0-CKE1 held high, is required after power-up. A Precharge All Banks command must be given followed by a minimum of eight Auto (CBR) Refresh cycles before or after the Mode Register Set operation. 2. The Transition time is measured between VIH and VIL (or between VIL and VIH). 3. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. AC timing tests have VIL = 0.8 V and VIH = 2.0 V with the timing referenced to the 1.40V crossover point 5. AC measurements assume tT=1.2 ns. AC Characteristics Diagrams tCKH Clock VIH 1.4V VIL tCKL tSETUP tT tHOLD Output Zo = 50Ω Input 50pF 1.4V AC Output Load Circuit tAC tOH tLZ Output 09K3605.F38386 12/99 1.4V ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 11 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Clock and Clock Enable Parameters Symbol -75A Parameter Min. Max. Units Notes tCK3 Clock Cycle Time, CAS Latency = 3 7.5 1000 ns tAC3 Clock Access Time, CAS Latency = 3 — 5.4 ns 1 tCKH Clock High Pulse Width 2.5 — ns 2 tCKL Clock Low Pulse Width 2.5 — ns 2 tCES Clock Enable Set-up Time 1.5 — ns tCEH Clock Enable Hold Time 0.8 — ns tSB Power down mode Entry Time 0 7.5 ns tT Transition Time (Rise and Fall) 0.5 10 ns 1. Access time is measured at 1.4V. In AC Characteristics section, see notes. 2. tCKH is the pulse width of CLK measured from the positive edge to the negative edge referenced to VIH (min). tCKL is the pulse width of CLK measured from the negative edge to the positive edge referenced to VIL (max). Common Parameters Symbol Parameter -75A Min. Max. Units Notes tCS Command Setup Time 1.5 — ns tCH Command Hold Time 0.8 — ns tAS Address and Bank Select Set-up Time 1.5 — ns tAH Address and Bank Select Hold Time 0.8 — ns RAS to CAS Delay 20.0 — ns 1 tRC Bank Cycle Time 67.5 — ns 1 tRAS Active Command Period 45 100000 ns 1 tRP Precharge Time 20.0 — ns 1 1 tRCD tRRD Bank to Bank Delay Time 15 — ns tCCD CAS to CAS Delay Time 1 — CLK 1. These parameters account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycles = specified value of timing / clock period (count fractions as a whole number). ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 12 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Mode Register Set Cycle Symbol tRSC Parameter 75A Min. Max. 2 — Mode Register Set Cycle Time Units Notes CLK 1 1. These parameters account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycles = specified value of timing / clock period (count fractions as a whole number). Read Cycle Symbol Parameter -75A Units Min. Max. 2.7 — ns Notes tOH Data Out Hold Time tLZ Data Out to Low Impedance Time 0 — ns tHZ3 Data Out to High Impedance Time 3 5.4 ns 1 tDQZ DQM Data Out Disable Latency 2 — CLK 1 Units Notes ms 1 1. Referenced to the time at which the output achieves the open circuit condition, not to output voltage levels. Refresh Cycle Symbol tREF tSREX Parameter -75A Min. Max. Refresh Period — 64 Self Refresh Exit Time 10 ns 1. 4096 auto refresh cycles. Write Cycle Symbol Parameter -75A Min. Max. Units tDS Data In Set-up Time 1.5 — ns tDH Data In Hold Time 0.8 — ns tDPL Data input to Precharge 15 — ns tDAL3 Data In to Active Delay CAS Latency = 3 5 — CLK tDQW DQM Write Mask Latency 0 — CLK 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 13 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Presence Detect Read and Write Cycle Symbol Max Unit SCL Clock Frequency 100 kHz TI Noise Suppression Time Constant at SCL, SDA Inputs 100 ns tAA SCL Low to SDA Data Out Valid 0.3 3.5 µs tBUF Time the Bus Must Be Free before a New Transmission Can Start 4.7 µs Start Condition Hold Time 4.0 µs tLOW Clock Low Period 4.7 µs tHIGH Clock High Period 4.0 µs tSU:STA Start Condition Setup Time (for a Repeated Start Condition) 4.7 µs tHD:DAT Data in Hold Time 0 µs tSU:DAT Data in Setup Time 250 ns fSCL tHD:STA Parameter Min tr SDA and SCL Rise Time 1 µs tf SDA and SCL Fall Time 300 ns Stop Condition Setup Time 4.7 µs tDH Data Out Hold Time 300 ns tWR Write Cycle Time tSU:STO 15 ms Notes 1 1. The Write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal Erase/Program cycle. During the Write cycle, the bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 14 of 18 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Functional Description and Timing Diagrams Refer to the IBM 64Mb Synchronous DRAM Die Revision C data sheet, document 19L3265.E35856, for the functional description and timing diagrams for SDRAM operation. Refer to the IBM Application Notes Serial Presence Detect on Memory DIMMs and SDRAM Presence Detect Definitions for the Serial Presence Detect functional description and timings. All AC timing information refers to the timings at the SDRAM devices. 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 15 of 18 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Layout Drawing 133.35 5.25 131.35 5.171 127.35 5.014 * 6.35 .250 3.0 .118 1780 .700 (2) 0 3.18 .1255 34.925 1.375 (2x) 4.00 .157 Front 1.27 Pitch .050 42.18 1.661 1.00 Width .039 66.68 2.63 See Detail A * Note: on x72 Module Only Side Detail A SCALE 4/1 4.01 .158 max. 2.0 .078 3.0 .118 5.95 .234 min. R 1.00 .0393 _ 0.10 1.27 + _ .004 .050 + Note: All dimensions are typical unless otherwise stated. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 16 of 18 Millimeters Inches 09K3605.F38386 12/99 IBM13N16644HCB IBM13N16734HCB 16M x 64/72 Two-Bank Unbuffered SDRAM Module Revision Log Rev Contents of Modification 6/99 Initial Release. 8/99 Removed Preliminary 12/99 Updated ordering information 09K3605.F38386 12/99 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 17 of 18 Copyright and Disclaimer Copyright International Business Machines Corporation 1999 All Rights Reserved Printed in the United States of America December 1999 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or both. IBM IBM Logo Other company, product and service names may be trademarks or service marks of others. All information contained in this document is subject to change without notice. The products described in this document are NOT intended for use in implantation or other life support applications where malfunction may result in injury or death to persons. The information contained in this document does not affect or change IBM product specifications or warranties. Nothing in this document shall operate as an express or implied license or indemnity under the intellectual property rights of IBM or third parties. All information contained in this document was obtained in specific environments, and is presented as an illustration. The results obtained in other operating environments may vary. THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROVIDED ON AN "AS IS" BASIS. In no event will IBM be liable for damages arising directly or indirectly from any use of the information contained in this document. IBM Microelectronics Division 1580 Route 52, Bldg. 504 Hopewell Junction, NY 12533-6351 The IBM home page can be found at http://www.ibm.com The IBM Microelectronics Division home page can be found at http://www.chips.ibm.com 09K3605.F38386. 12/99