IDP06E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology 600 V IF 6 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP06E60 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D06E60 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 14.7 TC=90°C 10 Surge non repetitive forward current Unit I FSM 29 I FRM 22 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Ptot Power dissipation W TC=25°C 46.9 TC=90°C 26.6 Tj , Tstg TS Operating and storage temperature Soldering temperature -55...+175 260 °C °C wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev.2.4 Page 1 2009-09-28 IDP06E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.2 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - 35 - @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics IR Reverse leakage current μA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 500 VF Forward voltage drop V IF=6A, Tj=25°C - 1.5 2 IF=6A, Tj=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2 2009-09-28 IDP06E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Reverse recovery time typ. Unit max. t rr ns V R=400V, IF=6A, di/dt=550A/μs, Tj=25°C - 70 - V R=400V, IF=6A, di/dt=550A/μs , Tj=125°C - 100 - V R=400V, IF=6A, di/dt=550A/μs , Tj=150°C - 105 - I rrm Peak reverse current A V R=400V, IF=6A, di/dt=550A/μs, Tj=25°C - 6.5 - V R=400V, IF=6A, di/dt=550A/μs, Tj=125°C - 7.4 - V R=400V, IF=6A, di/dt=550A/μs, Tj=150°C - 7.9 - Q rr Reverse recovery charge nC V R=400V, IF=6A, di/dt=550A/μs, Tj=25°C - 240 - V R=400V, IF=6A, di/dt=550A/μs, Tj=125°C - 360 - V R=400V, IF=6A, di/dt=550A/μs, Tj=150°C - 400 - V R=400V, IF=6A, di F/dt=550A/μs, Tj=25°C - 4 - V R=400V, IF=6A, di F/dt=550A/μs, Tj=125°C - 4.8 - V R=400V, IF=6A, di F/dt=550A/μs, Tj=150°C - 4.9 - S Reverse recovery softness factor Rev.2.4 Page 3 2009-09-28 IDP06E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj ≤ 175°C 50 16 W A 40 12 IF P tot 35 30 10 25 8 20 6 15 4 10 2 5 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 18 V A 14 1.8 -55°C 25°C 100°C 150°C 1.7 VF IF 12 12A 1.6 10 6A 1.5 8 1.4 6 1.3 3A 4 1.2 2 0 0 1.1 0.5 1 1.5 1 -60 2.5 V VF Rev.2.4 Page 4 -20 20 60 100 160 °C Tj 2009-09-28 IDP06E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 300 550 nC ns 12A 500 12A 6A 3A Qrr trr 200 475 450 425 150 400 6A 375 100 350 325 50 300 3A 275 0 200 300 400 500 600 A/μs 250 200 800 300 400 500 600 800 A/μs diF/dt di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 11 A 9 12A 6A 3A 12A 6A 3A 8 8 S Irr 9 7 6 7 5 6 4 3 5 2 4 1 3 200 300 400 500 600 A/μs 800 di F/dt Rev.2.4 Page 5 0 200 300 400 500 600 700 800 A/μs 1000 diF/dt 2009-09-28 IDP06E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP06E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 single pulse 0.02 10 -3 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.4 Page 6 2009-09-28 IDP06E60 Package outline: TO220-2-1 Rev.2.4 Page 7 2009-09-28 IDP06E60 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8 2009-09-28