ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) FEATURES Dual Channel • Alternate source TLP621GB-2/-4 to TLP621-2/-4 and A 1 8 C • High collector emitter voltage, BVCEO = 70 V C 2 7 E A 3 6 C C 5 E • Dual and quad packages feature: - Lower pin and parts count - Better channel to channel CTR match - Improved common mode rejection 4 • Isolation test voltage, 5300 VRMS • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Quad Channel A 1 16 C C 2 15 E A 3 14 C C 4 13 E A 5 12 C C 6 11 E A 7 10 C C 8 9 E AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO i179054 DESCRIPTION The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present. ORDER INFORMATION PART REMARKS ILD621 CTR > 50 %, dual, DIP-8 ILD621GB CTR > 100 %, dual, DIP-8 ILQ621 CTR > 50 %, quad, DIP-16 ILQ621GB ILD621-X006 Document Number: 83654 Rev. 1.5, 20-Dec-07 CTR > 100 %, quad, DIP-16 CTR > 50 %, dual, DIP-8 400 mil For technical questions, contact: [email protected] www.vishay.com 1 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) ORDER INFORMATION PART REMARKS CTR > 50 %, dual, SMD-8 (option 7) ILD621-X007 ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9) ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7) ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7) ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9) ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7) ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION PART SYMBOL VALUE UNIT VR IF 6.0 60 1.5 100 1.33 V mA A mW mW/°C VECO IC IC Pdiss 70 50 100 150 - 2.0 V mA mA mW mW/°C VISO 5300 VRMS 400 400 5.33 500 500 6.67 ≥ 7.0 mW mW mW/°C mW mW mW/°C mm INPUT Reverse voltage Forward current Surge current Power dissipation Derate from 25 °C OUTPUT Collector emitter reverse voltage Collector current IFSM Pdiss t < 1.0 ms Power dissipation Derate from 25 °C COUPLER Isolation test voltage t = 1.0 s ILD621 ILD621GB Package dissipation Derate from 25 °C ILQ621 ILQ621GB Package dissipation Derate from 25 °C Creepage distance ≥ 7.0 mm VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Clearance distance Isolation resistance Junction temperature Soldering temperature (2) 2.0 mm from case bottom Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83654 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.0 1.15 1.3 V 0.01 10 µA INPUT Forward voltage IF = 10 mA VF Reverse current VR = 6.0 V IR VR = 0 V, f = 1.0 MHz Capacitance Thermal resistance, junction to lead CO 40 pF RTHJL 750 K/W CCE 6.8 ICEO 10 100 ICEO 20 50 RTHJL 500 OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz Collector emitter leakage current VCE = 24 V Thermal resistance, junction to lead pF nA µA K/W COUPLER Capacitance (input to output) VIO = 0 V, f = 1.0 MHz CIO VIO = 500 V Insulation resistance Channel to channel insulation IF = 8.0 mA, ICE = 2.4 mA Collector emitter saturation voltage IF = 1.0 mA, ICE = 0.2 mA ILD621 ILQ621 ILD621GB ILQ621GB 0.8 pF 1012 Ω 500 VAC VCEsat 0.4 V VCEsat 0.4 V Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION Channel/channel CTR match PART IF = 5.0 mA, VCE = 5.0 V SYMBOL MIN. CTRX/ CTRY 1 to 1 TYP. MAX. UNIT 3 to 1 % ILD621 CTRCEsat 60 % ILQ621 CTRCEsat 60 % ILD621GB CTRCEsat 30 ILQ621GB CTRCEsat 30 ILD621 CTRCE 50 80 600 % ILQ621 CTRCE 50 80 600 % ILD621GB CTRCE 100 200 600 % ILQ621GB CTRCE 100 200 600 % TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT On time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Off time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H to L IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L to H IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs Current transfer ratio (collector emitter saturated) IF = 1.0 mA, VCE = 0.4 V Current transfer ratio (collector emitter) IF = 5.0 mA, VCE = 5.0 V % % SWITCHING CHARACTERISTICS PARAMETER NON-SATURATED Document Number: 83654 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 3 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT On time IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V ton 4.3 µs Rise time IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V tr 2.8 µs Off time IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V toff 2.5 µs Fall time IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V tf 11 µs Propagation H to L IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V tPHL 2.6 µs Propagation L to H IF = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V tPLH 7.2 µs SATURATED COMMON MODE TRANSIENT IMMUNITY TEST CONDITION SYMBOL Common mode rejection, output high PARAMETER VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA MIN. TYP. MAX. UNIT CMH 5000 V/µs Common mode rejection, output low VCM = 50 VP-P, RL = 1.0 kΩ, IF = 10 mA CML 5000 V/µs TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IF IF tPLH tPLH VO VO tS tD tR t PLH 50 % tD tR VTH = 1.5 V tF t PHL iild621_01 tF tS iild621_03 Fig. 1 - Non-Saturated Switching Timing Fig. 3 - Saturated Switching Timing VCC = 5 V VCC = 5 V F = 10 kHz, DF = 50 % RL IF = 10 mA VO F = 10 kHz, DF = 50 % iild621_02 iild621_04 Fig. 2 - Non-Saturated Switching Timing www.vishay.com 4 VO RL = 75 Ω Fig. 4 - Saturated Switching Timing For technical questions, contact: [email protected] Document Number: 83654 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) IF - Maximum LED Currrent (mA) 120 35 ICE - Collector Current (mA) 100 80 60 TJ (max.) = 100 °C 40 20 0 - 60 - 40 - 20 20 40 60 80 25 50 °C 20 15 70 °C 25 °C 85 °C 10 5 100 0 10 20 30 40 50 60 IF - LED Current (mA) iild621_08 Fig. 5 - Maximum LED Current vs. Ambient Temperature Fig. 8 - Collector Emitter Current vs. Temperature and LED Current 200 10 5 ICEO - Collector Emitter (nA) PLED - LED Power (mW) 30 0 0 Tamb - Ambient Temperature (°C) iild621_05 Vishay Semiconductors 150 100 50 0 0 - 60 - 40 - 20 20 40 60 80 iild621_06 Tamb - Ambient Temperature (°C) 10 4 10 3 10 2 Typical 10 0 10 - 1 10 - 2 - 20 100 VCE = 10 V 10 1 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) iild621_09 t PLH - Propagation Low-High (µs) 1.4 VF - Forward Voltage (V) 1.3 TA = 85 °C 1.2 TA = 85 °C 1.1 1.0 0.9 TA = 85 °C 0.8 0.7 0.1 1 10 IF - Forward Current (mA) iild621_07 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V 100 2.0 tPLH 10 1.5 tPHL 1 0.1 1.0 1 10 100 R L - Collector Load Resistor (kΩ) iild621_10 Fig. 7 - Forward Voltage vs. Forward Current Document Number: 83654 Rev. 1.5, 20-Dec-07 100 1000 t PHL - Propagation High-Low (µs) Fig. 9 - Collector Emitter Leakage vs. Temperature Fig. 6 - Maximum LED Power Dissipation Fig. 10 - Propagation Delay vs. Collector Load Resistor For technical questions, contact: [email protected] www.vishay.com 5 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) CTRNF - Normalized CTR Factor Vishay Semiconductors PDET - Detector Power (mW) 200 150 100 50 2.0 Normalized to: VCE = 10 V, I F = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 70 °C 0.0 0.1 0 - 60 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) iild621_11 1 10 IF - LED Current (mA) 100 iild621_14 Fig. 11 - Maximum Detector Power Dissipation Fig. 14 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF 100 CTRNF - Normalized CTR Factor ICE - Collector Current (mA) 1000 Rth = 500 °C /W 10 25 °C 50 °C 75 °C 90 °C 1 0.1 2.0 Normalized to: VCE = 10 V, I F = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 1.0 NCTRce 0.5 NCTRce(sat) TA = 100 °C 0.0 0.1 0.1 iild621_12 10 1 100 1 10 IF - LED Current (mA) 100 VCE - Collector Emitter Voltage (V) iild621_15 Fig. 12 - Maximum Collector Current vs. Collector Voltage CTRNF - Normaliued CTR Factor Fig. 15 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF 2.0 Normalized to: VCE = 10 V, I F = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 50 °C 0.0 0.1 1 10 IF - LED Current (mA) 100 iild621_13 Fig. 13 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83654 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) Pin one ID 4 3 2 1 5 6 7 8 0.255 (6.48) 0.268 (6.81) ISO method A 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031 (0.79) 4° typ. 0.130 (3.30) 0.150 (3.81) 0.050 (1.27) 0.230 (5.84) 10° 0.020 (0.51) 0.018 (0.46) 0.250 (6.35) 0.130 (3.30) 3° to 9° 0.035 (0.89) 0.022 (0.56) 0.110 (2.79) 0.008 (0.20) 0.100 (2.54) typ. 0.012 (0.30) i178006 Pin one ID 8 7 6 5 4 3 2 1 0.255 (6.48) 0.265 (6.81) 9 10 11 12 13 14 15 16 ISO method A 0.779 (19.77) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031 (0.79) 0.130 (3.30) 0.150 (3.81) 4° 0.018 (0.46) 0.022 (0.56) 0.020 (0.51) 0.035 (0.89) 0.100 (2.54) typ. 0.050 (1.27) 0.110 (2.79) 0.130 (3.30) 10° typ. 0.230 (5.84) 0.250 (6.35) 3° to 9° 0.008 (0.20) 0.012 (0.30) i178007 Document Number: 83654 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 7 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 8 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 Document Number: 83654 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83654 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1