INFINEON IPD64CN10NG

IPD64CN10N G
IPU64CN10N G
OptiMOS®2 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
100
V
R DS(on),max
64
mΩ
ID
17
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPD64CN10N G
IPU64CN10N G
Package
PG-TO252-3
PG-TO251-3
Marking
64CN10N
64CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
17
T C=100 °C
13
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
68
Avalanche energy, single pulse
E AS
I D=17 A, R GS=25 Ω
34
mJ
Reverse diode dv /dt
dv /dt
I D=17 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage3)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
±20
V
44
W
-55 ... 175
°C
55/175/56
J-STD20 and JESD22
2)
see figure 3
3)
T jmax=150°C and duty cycle D =0.01 for V GS<-5V
Rev. 1.01
page 1
2006-02-21
IPD64CN10N G
IPU64CN10N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.4
minimal footprint
-
-
75
6 cm² cooling area 4)
-
-
50
100
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient (TO252)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=17 A
-
45
64
mΩ
Gate resistance
RG
-
1.6
-
Ω
Transconductance
g fs
8
15
-
S
|V DS|>2|I D|R DS(on)max,
I D=17 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-02-21
IPD64CN10N G
IPU64CN10N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
428
569
-
132
176
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
6
10
Turn-on delay time
t d(on)
-
7
11
Rise time
tr
-
3
4
Turn-off delay time
t d(off)
-
9
14
Fall time
tf
-
2
4
Gate to source charge
Q gs
-
3
4
Gate to drain charge
Q gd
-
2
3
-
3
4
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=17 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=50 V, I D=17 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
6
9
Gate plateau voltage
V plateau
-
6.3
-
Output charge
Q oss
-
13
18
nC
-
-
17
A
-
-
68
-
1
1.2
-
70
-
120
V DD=50 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=17 A,
T j=25 °C
V R=50 V, I F=I S,
di F/dt =100 A/µs
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.01
page 3
2006-02-21
IPD64CN10N G
IPU64CN10N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
20
40
15
I D [A]
P tot [W]
30
10
20
5
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
102
101
1 µs
10 µs
100 µs
101
0.5
I D [A]
Z thJC [K/W]
1 ms
DC
10 ms
100
0.2
0.1
100
0.05
0.02
0.01
single pulse
10-1
10
10-1
-1
10
0
10
1
10
2
10
3
V DS [V]
Rev. 1.01
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2006-02-21
IPD64CN10N G
IPU64CN10N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
50
10 V
8V
140
40
120
5 V 5.5 V 6 V
8V
7V
30
R DS(on) [mΩ]
100
I D [A]
7V
20
6.5 V
80
60
10 V
6V
40
10
5.5 V
20
5V
4.5 V
0
0
1
0
2
3
4
5
0
20
40
V DS [V]
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
50
30
40
20
I D [A]
g fs [S]
30
20
10
10
175 °C
25 °C
0
0
0
2
4
6
8
Rev. 1.01
0
10
20
30
40
50
I D [A]
V GS [V]
page 5
2006-02-21
IPD64CN10N G
IPU64CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=17 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
150
4
3.5
200 µA
3
100
20 µA
V GS(th) [V]
R DS(on) [mΩ]
2.5
98 %
1.5
typ
50
2
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
175 °C, 98%
25 °C
103
175 °C
Ciss
10
25 °C, 98%
I F [A]
C [pF]
Coss
102
1
Crss
101
100
0.1
0
20
40
60
80
Rev. 1.01
0
0.5
1
1.5
2
V SD [V]
V DS [V]
page 6
2006-02-21
IPD64CN10N G
IPU64CN10N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=17 A pulsed
parameter: T j(start)
parameter: V DD
100
12
20 V
10
50 V
80 V
V GS [V]
I AS [A]
8
10
25 °C
6
100 °C
4
150 °C
2
1
0
1
10
100
1000
0
2
4
6
8
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
115
V GS
Qg
V BR(DSS) [V]
110
105
V g s(th)
100
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.01
page 7
2006-02-21
IPD64CN10N G
IPU64CN10N G
PG-TO252-3: Outline
Rev. 1.01
page 8
2006-02-21
IPD64CN10N G
IPU64CN10N G
PG-TO251-3: Outline
Rev. 1.01
page 9
2006-02-21
IPD64CN10N G
IPU64CN10N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
page 10
2006-02-21