INFINEON IPP06CNE8NG

IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
OptiMOS®2 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
85
V
R DS(on),max (TO263)
6.2
mΩ
ID
100
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
06CNE8N
06CNE8N
06CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
100
T C=100 °C
88
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
480
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
6
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.01
Unit
A
mJ
kV/µs
±20
V
214
W
-55 ... 175
°C
55/175/56
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2006-02-14
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.7
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
85
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=180 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=68 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=68 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A,
TO220, TO262
-
5.0
6.5
mΩ
V GS=10 V, I D=100 A,
TO263
-
4.7
6.2
-
1.6
-
Ω
67
134
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=100 A
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A.
3)
See figure 3
4)
Tjmax=150 °C and duty cycle D=0.01 for V gs<-5V
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.01
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2006-02-14
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6950
9240
-
1310
1740
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
89
134
Turn-on delay time
t d(on)
-
17
26
Rise time
tr
-
27
40
Turn-off delay time
t d(off)
-
26
39
Fall time
tf
-
7
10
Gate to source charge
Q gs
-
37
49
Gate to drain charge
Q gd
-
24
36
Switching charge
Q sw
-
40
57
Gate charge total
Qg
-
103
138
Gate plateau voltage
V plateau
-
5.3
-
Output charge
Q oss
-
99
132
nC
-
-
100
A
-
-
400
-
1
1.2
-
110
-
280
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=50 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics6)
V DD=40 V, I D=100 A,
V GS=0 to 10 V
V DD=40 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.01
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IPB06CNE8N G
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1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
250
100
200
80
I D [A]
P tot [W]
150
60
100
40
50
20
0
0
0
50
100
150
0
200
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
100
1 µs
0.5
10 µs
102
100 µs
0.2
-1
1 ms
10
0.1
Z thJC [K/W]
I D [A]
DC
10 ms
1
10
0.05
0.02
0.01
single pulse
-2
10
0
10
10-1
10-3
-1
10
0
1
10
10
2
10
V DS [V]
Rev. 1.01
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
15
8V
7V
4.5 V
10 V
320
12
5V
6.5 V
R DS(on) [mΩ]
I D [A]
240
6V
160
9
5.5 V
6V
6
10 V
5.5 V
80
3
5V
4.5 V
0
0
0
1
2
3
4
5
0
20
40
V DS [V]
60
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
300
200
250
160
200
g fs [S]
I D [A]
120
150
80
100
175 °C
50
25 °C
40
0
0
0
2
4
6
8
Rev. 1.01
0
50
100
150
I D [A]
V GS [V]
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IPB06CNE8N G
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9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
14
3.5
12
1800 µA
3
180 µA
2.5
8
V GS(th) [V]
R DS(on) [mΩ]
10
98 %
6
typ
2
1.5
4
1
2
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
104
25 °C
Ciss
175 °C
175 °C, 98%
2
10
25 °C, 98%
I F [A]
C [pF]
Coss
103
Crss
101
102
101
100
0
20
40
60
80
V DS [V]
Rev. 1.01
0
0.5
1
1.5
2
V SD [V]
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13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
1000
12
40 V
10
20 V
100
60 V
8
V GS [V]
I AS [A]
25 °C
100 °C
150 °C
10
6
4
2
1
0
1
10
100
1000
0
20
40
60
80
100
120
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
Qg
V BR(DSS) [V]
95
90
V g s(th)
85
80
Q g (th)
Q sw
Q gs
75
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.01
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IPB06CNE8N G
IPI06CNE8N G
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PG-TO220-3: Outline
Rev. 1.01
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2006-02-14
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Rev. 1.01
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2006-02-14
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Rev. 1.01
page 10
2006-02-14
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office ( www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
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2006-02-14