Preliminary Data Sheet No. PD60130-J IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible FAULT lead indicates shutdown has occured Output out of phase with input Description The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. VOFFSET 600V max. IO+/- 110 mA / 110 mA VOUT 10 - 20V VCSth 500 mV ton/off (typ.) 250 & 200 ns Packages 8-Lead SOIC 8-Lead PDIP Typical Connection V CC IN FAULT V CC VB IN HO FAULT CS COM VS (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IR2122(S) Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. VB High Side Floating Supply Voltage -0.3 625 VS High Side Floating Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VCC Logic Supply Voltage -0.3 25 VIN Logic Input Voltage -0.3 VCC + 0.3 VFLT FAULT Output Voltage -0.3 VCC + 0.3 VCS Current Sense Voltage VS - 0.3 VB + 0.3 — 50 dVs/dt Allowable Offset Supply Voltage Transient PD Package Power Dissipation @ TA ≤ +25°C RTHJA Thermal Resistance, Junction to Ambient V V/ns (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 TJ Junction Temperature — 150 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 Units W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Definition Min. Max. VB High Side Floating Supply Voltage VS + 13 VS + 20 VS High Side Floating Offset Voltage Note 1 600 VHO High Side Floating Output Voltage VS VB VCC Logic Supply Voltage 13 20 VIN Logic Input Voltage 0 VCC VFLT FAULT Output Voltage 0 VCC VCS Current Sense Signal Voltage VS VS + 5 Ambient Temperature -40 150 TA Units V °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2122(S) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay — 250 — VS = 0V toff Turn-Off Propagation Delay — 200 — VS = 600V tr Turn-On Rise Time — 250 — tf Turn-Off Fall Time — 250 — tbl Start-Up Blanking Time 500 900 — tcs CS Shutdown Propagation Delay — 350 — tflt CS to FAULT Pull-Up Propagation Delay — 450 — CL = 1000 pF ns CL = 1000 pF Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS. Symbol Definition Min. Typ. Max. Units Test Conditions VIH Logic “0” Input Voltage (OUT = LO) 3.0 — — VCC = 10V to 20V VIL Logic “1” Input Voltage (OUT = HI) — — 0.8 VCC = 10V to 20V VCSTH+ CS Input Positive Going Threshold 350 500 650 VCC = 10V to 20V IO = 0A V VOH High Level Output Voltage, VBIAS - VO — — 100 VOL Low Level Output Voltage, VO — — 100 ILK Offset Supply Leakage Current — — 50 VB = VS = 600V IQBS Quiescent VBS Supply Current — 150 350 VIN = 0V or 5V IQCC Quiescent VCC Supply Current — 60 120 IIN+ Logic “1” Input Bias Current — 7.0 15 IIN- Logic “0” Input Bias Current — — 1.0 VIN = 5V ICS+ “High” CS Bias Current — — 1.0 VCS = 3V ICS- “High” CS Bias Current — — 1.0 VCS = 0V VBSUV+ VBS Supply Undervoltage Positive Going Threshold 10.0 11.4 13.0 VBSUV- VBS Supply Undervoltage Negative Going Threshold 9.5 10.4 12.5 IO+ Output High Short Circuit Pulsed Current 110 130 — IO- Output Low Short Circuit Pulsed Current 110 130 — www.irf.com mV IO = 0A VIN = 0V or 5V µA VIN = 0V V mA VO = 0V, VIN = 0V PW ≤ 10 µs VO = 15V, VIN = 5V PW ≤ 10 µs 3 IR2122(S) Functional Block Diagram Lead Definitions Lead Symbol Description VCC IN FAULT COM VB HO VS CS Logic and gate drive supply Logic input for gate driver output (HO), out of phase with HO Indicates over-current shutdown has occurred, negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator Lead Assignments 4 8 Lead PDIP 8 Lead SOIC IR2122 IR2122S www.irf.com IR2122(S) www.irf.com 5 IR2122(S) Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A F OOT PRINT 6 8 7 6 5 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] MIN .0532 .0688 1.35 1.75 A1 .0040 3X 1.27 [.050] 8X 1.78 [.070] e1 MAX .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X e MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X L 8X c 7 C A B NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 8-Lead SOIC 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010]. 7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO A SUBS TRAT E. 01-6027 01-0021 11 (MS-012AA) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/15/2001 6 www.irf.com