PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET®plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested ISOMETRIC MX l Footprint compatible to DirectFET™ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l l SQ SX ST MQ MT MX MP Description The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f h VGS, Gate-to-Source Voltage (V) VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Typical RDS(on) (mΩ) 4.0 ID = 33A 3.0 TJ = 125°C 2.0 1.0 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com Max. Units 25 ±16 32 25 160 260 410 26 V A mJ A 14.0 ID= 26A 12.0 VDS= 20V VDS= 13V VDS= 5V 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.18mH, RG = 50Ω, IAS = 26A. 1 8/12/11 IRF6894MTRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.9 1.3 mΩ ––– 1.4 1.8 VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 ΔVGS(th)/ΔTJ IDSS Gate Threshold Voltage Coefficient ––– -4.3 ––– Drain-to-Source Leakage Current ––– ––– 500 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 255 ––– ––– gfs Qg Conditions Typ. Max. Units Total Gate Charge ––– 26 39 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– VGS = 0V, ID = 1.0mA ID = 10mA ( 25°C-125°C) VGS = 10V, ID = 33A VGS = 4.5V, ID = 26A i i V VDS = VGS, ID = 100μA mV/°C VDS = VGS, ID = 10mA μA VDS = 20V, VGS = 0V nA VGS = 16V VGS = -16V S VDS =13V, ID =26A VDS = 13V nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 9.8 ––– ID = 26A Qgodr ––– 6.8 ––– See Fig.15 Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 12.6 ––– Qoss Output Charge ––– 31 ––– nC RG Gate Resistance ––– 0.3 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– VDD = 13V, VGS = 4.5V ID = 26A tr Rise Time ––– 42 ––– td(off) Turn-Off Delay Time ––– 20 ––– tf Fall Time ––– 14 ––– Ciss Input Capacitance ––– 4160 ––– Coss Output Capacitance ––– 1310 ––– Crss Reverse Transfer Capacitance ––– 290 ––– ns VDS = 16V, VGS = 0V i RG= 1.8Ω See Fig.17 VGS = 0V pF VDS = 13V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD g Diode Forward Voltage Min. Typ. Max. Units ––– ––– 33 ––– ––– 260 ––– ––– 0.75 Conditions MOSFET symbol A D showing the integral reverse G V p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V trr Reverse Recovery Time ––– 28 42 ns TJ = 25°C, IF =26A Qrr Reverse Recovery Charge ––– 56 84 nC di/dt = 340A/μs i S i Notes: Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com IRF6894MTRPbF Absolute Maximum Ratings Max. Units 2.1 1.3 54 270 -40 to + 150 W Parameter el el f Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG °C Thermal Resistance Parameter RθJA RθJA RθJA RθJC RθJ-PCB el jl kl Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted f Linear Derating Factor e Typ. Max. Units ––– 12.5 20 ––– 1.0 60 ––– ––– 2.3 ––– °C/W 0.017 W/°C 100 Thermal Response ( ZthJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 0.001 1E-006 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Rθ is measured at TJ of approximately 90°C. Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6894MTRPbF 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 10 TOP 2.5V 1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100 TOP 2.5V 10 BOTTOM ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.1 Tj = 150°C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 1.6 ID = 33A TJ = 150°C TJ = 25°C TJ = -40°C 100 Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 100 Fig 5. Typical Output Characteristics 1000 10 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 V GS = 4.5V 1.2 1.0 0.8 0.6 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 6. Typical Transfer Characteristics 100000 V GS = 10V 1.4 VGS, Gate-to-Source Voltage (V) Fig 7. Normalized On-Resistance vs. Temperature 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED TJ = 25°C C rss = C gd 4.0 Typical RDS (on) (mΩ) C oss = C ds + C gd C, Capacitance(pF) 10 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 10000 Ciss Coss 1000 Crss 3.0 Vgs = 3.5V Vgs = 4.5V Vgs = 5.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 12V Vgs = 15V 2.0 1.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF6894MTRPbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150°C 10 T J = 25°C T J = -40°C 1000 VGS = 0V 0.4 0.7 100 10msec 100μsec 10 1 DC 0.1 TA = 25°C Tj = 150°C Single Pulse 0.01 1.0 0.1 1 10 100 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) 1msec 0.01 1 0.1 OPERATION IN THIS AREA LIMITED BY R DS(on) 120 100 80 60 40 20 ID = 10mA 2.0 1.5 1.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 1600 ID TOP 1.9A 2.7A BOTTOM 26A 1200 800 400 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6894MTRPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS 15V D.U.T V RGSG 20V DRIVER L VDS tp + - VDD IAS A I AS 0.01Ω tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) Fig 17a. Switching Time Test Circuit 6 tr t d(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6894MTRPbF Driver Gate Drive D.U.T + RG * • • • • D.U.T. ISD Waveform Reverse Recovery Current V DD ** P.W. Period *** + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel ISD *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs DirectFET®plus Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET ®plus . This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S G S D www.irf.com D 7 IRF6894MTRPbF DirectFET®plus Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET®plus. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.535 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.595 0.080 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.021 0.001 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.023 0.003 0.007 DirectFET®plus Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 8 www.irf.com IRF6894MTRPbF DirectFET®plus Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6894MTRPBF). For 1000 parts on 7" reel, order IRF6894MTR1PBF REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MAX MIN MIN CODE MAX MAX MAX MIN MIN N.C 6.9 12.992 A N.C 177.77 330.0 N.C N.C N.C 0.75 0.795 B N.C N.C N.C 19.06 20.2 0.50 0.53 0.504 C 0.520 13.5 12.8 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 2.31 3.937 E N.C N.C 58.72 100.0 N.C N.C N.C N.C F 0.53 N.C N.C 18.4 13.50 0.724 G 0.47 0.488 0.567 N.C 11.9 12.4 14.4 12.01 0.47 0.469 H N.C 11.9 11.9 15.4 12.01 0.606 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 8.10 7.90 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.55 5.45 0.219 0.201 0.209 5.30 5.10 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2011 www.irf.com 9