PD - 9.1436B
IRF7314
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
VDSS = -20V
RDS(on) = 0.058Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Symbol
Maximum
V DS
VGS
-20
± 12
-5.3
-4.3
-21
-2.5
2.0
1.3
150
-2.9
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
Limit
Units
RθJA
62.5
°C/W
11/18/97
IRF7314
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
0.031 ––– V/°C Reference to 25°C, ID = -1mA
0.049 0.058
VGS = -4.5V, ID = -2.9A
Ω
0.082 0.098
VGS = -2.7V, ID = -1.5A
––– –––
V
VDS = VGS, ID = -250µA
5.9 –––
S
VDS = -10V, ID = -1.5A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 55°C
––– 100
VGS = -12V
nA
––– -100
VGS = 12V
19
29
ID = -2.9A
4.0 6.1
nC
VDS = -16V
7.7
12
VGS = -4.5V, See Fig. 10
15
22
VDD = -10V
40
60
ID = -2.9A
ns
42
63
RG = 6.0Ω
49
73
RD = 3.4Ω
780 –––
VGS = 0V
470 –––
pF
VDS = -15V
240 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-21
A
––– -0.78 -1.0
––– 47
71
––– 49
73
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.9A, VGS = 0V
TJ = 25°C, IF = -2.9A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.9A.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF7314
100
100
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
TOP
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-1.50V
1
0.1
0.1
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
1.5
20µs PULSE WIDTH
TJ = 150 °C
V DS = -10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
5.0
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
1.4
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
2.0
I D = -2.9A
1.5
1.0
0.5
V G S = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
R DS(on) , Drain-to-Source On Resistance ( Ω )
IRF7314
0.8
0.6
V G S = -2.7V
0.4
0.2
V G S = -4.5V
0.0
140 160
0
4
T J , Junction T em perature (°C )
12
0.07
0.06
I D = -5.3A
0.05
0.04
0.03
A
4.0
6.0
V G S , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
8.0
EAS , Single Pulse Avalanche Energy (mJ)
400
2.0
20
Fig 6. Typical On-Resistance Vs. Drain
Current
0.08
0.0
16
-I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS(on) , Drain-to-Source On Resistance ( Ω )
8
ID
-1.3A
-2.3A
BOTTOM -2.9A
TOP
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
A
IRF7314
V GS
C is s
C rs s
C oss
C , C apacitanc e (pF )
1200
1000
=
=
=
=
10
0V ,
f = 1M H z
C gs + C gd , Cds S H O R TE D
C gd
C ds + C gd
-V G S , Gate-to-Source Voltage (V)
1400
C is s
800
C os s
600
400
C rs s
200
0
A
1
10
100
I D = -2.9A
V D S = -16V
8
6
4
2
A
0
0
-VD S , D rain-to-S ource V oltage (V )
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7314
Package Outline
SO8 Outline
DIM
D
-B-
5
8
7
6
5
H
E
-A-
1
2
3
e
6X
0.25 (.010)
4
M
A M
K x 45°
e1
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
L
8X
A1
6
C
8X
M C A S B S
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6.46 ( .255 )
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P L E : T H IS IS A N IR F 7 1 0 1
312
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
XX X X
F7101
TOP
PART NUMBER
W AFER
LO T CODE
(L A S T 4 D IG IT S )
BO TTO M
IRF7314
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TE R M IN AL N U M B ER 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IR EC T IO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 .
330.00
(12.992)
M A X.
14.40 ( .566 )
12.40 ( .488 )
N O T ES :
1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER .
2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541.
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Data and specifications subject to change without notice.
11/97