IRF IRF7555

PD -91865B
IRF7555
HEXFET® Power MOSFET
Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
●
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
VDSS = -20V
RDS(on) = 0.055Ω
T o p V ie w
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
dv/dt
TJ , TSTG
Max.
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
36
1.1
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Max.
Maximum Junction-to-Ambient „
Units
100
°C/W
1
2/2/00
IRF7555
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.60
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.055
VGS = -4.5V, ID = -4.3A ƒ
Ω
––– 0.105
VGS = -2.5V, ID = -3.4A ƒ
––– -1.2
V
VDS = VGS, ID = -250µA
––– –––
S
V DS = -10V, ID = -0.8A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
V GS = -12V
nA
––– 100
VGS = 12V
10
15
ID = -3.0A
2.1 3.1
nC
VDS = -10V
2.5 3.7
VGS = -5.0V
10 –––
VDD = -10V
46 –––
ID = -2.0A
ns
60 –––
RG = 6.0Ω
64 –––
R D = 5.0Ω ƒ
1066 –––
VGS = 0V
402 –––
pF
V DS = -10V
126 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.3
–––
–––
-34
–––
–––
–––
–––
54
41
-1.2
82
61
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.6A, VGS = 0V ƒ
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD ≤ -2.0A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 10sec.
… Starting TJ = 25°C, L = 8.0mH
RG = 25Ω, I AS = -3.0A.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7555
100
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
10
-1.50V
1
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -15V
20µs PULSE WIDTH
2.0
3.0
4.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
-VGS , Gate-to-Source Voltage (V)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
1.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
5.0
ID = -4.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7555
VGS =
Ciss =
Crss =
Coss =
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
400
Coss
Crss
15
-VGS , Gate-to-Source Voltage (V)
1600
12
VDS = -10V
9
6
3
0
1
10
ID = -4.3A
-4.5A
0
100
0
4
-VDS , Drain-to-Source Voltage (V)
8
12
16
20
24
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
10us
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.4
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7555
100
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
80
60
40
20
0
25
TC , Case Temperature ( ° C)
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7555
Package Outline
Micro8
 Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL L IM E T E R S
M IN
M AX
M IN
MAX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0.18
D
.1 1 6
.1 2 0
2 .9 5
3.05
e
.0 2 5 6 B A S IC
0 .6 5 B A S IC
e1
.0 1 2 8 B A S IC
0 .3 3 B A S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 .0 3
e
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B -
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G L E
DUAL
8 7 6 5
3
H
E
0 .2 5 (.0 1 0 )
-A -
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
( .0 4 1 )
8X
A
-C B
0 .1 0 (.0 0 4 )
A 1
8X
0 .0 8 (.0 0 3 )
M
C A S
L
8X
B
S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4 .2 4
5 .2 8
( .1 6 7 ) ( .2 0 8 )
N O TE S :
1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 .
0 .6 5 6 X
( .02 5 6 )
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H .
Part Marking Information
Micro8

D A T E C O D E (YW W ) A
Y = LA ST D IG IT O F YEA R
W W = W EE K
EX AM PLE : T H IS IS A N IR F 7501
45 1
75 01
P AR T N U M B ER
TOP
6
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IRF7555
Tape & Reel Information
Micro8

Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N OTES:
1 . O U TL IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
2 . C O N TR O LL IN G D IM E N S IO N : M ILL IM E T E R .
3 3 0 .0 0
(1 2 .9 9 2 )
M AX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
2/2000
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7