PD - 9.1505A
IRF7316
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
VDSS = -30V
RDS(on) = 0.058Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Symbol
Maximum
VDS
VGS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-2.2
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
Limit
Units
RθJA
62.5
°C/W
2/24/97
IRF7316
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
0.022 ––– V/°C Reference to 25°C, ID = -1mA
0.042 0.058
VGS = -10V, ID = -4.9A
Ω
0.076 0.098
VGS = -4.5V, ID = -3.6A
––– –––
V
VDS = VGS, ID = -250µA
7.7 –––
S
VDS = -15V, ID = -4.9A
––– -1.0
VDS = -24V, VGS = 0V
µA
––– -25
VDS = -24V, VGS = 0V, TJ = 55°C
––– 100
VGS = -20V
nA
––– -100
VGS = 20V
23
34
ID = -4.9A
3.8 5.7
nC
VDS = -15V
5.9 8.9
VGS = -10V, See Fig. 10
13
19
VDD = -15V
13
20
ID = -1.0A
ns
34
51
RG = 6.0Ω
32
48
RD = 15Ω
710 –––
VGS = 0V
380 –––
pF
VDS = -25V
180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-30
A
––– -0.78 -1.0
––– 44
66
––– 42
63
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, I S = -1.7A, VGS = 0V
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ -2.8A, di/dt ≤ 150A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF7316
-I D , Drain-to-Source Current (A)
TOP
BOTTOM -
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
TOP
-I D , Drain-to-Source Current (A)
100
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
1
0.1
1
A
BOTTOM -
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
1
10
0.1
-V DS, Drain-to-Source Voltage (V)
1
A
10
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
-I S D , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
T J = 25°C
TJ = 150°C
10
V D S = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
6.0
A
TJ = 150°C
10
TJ = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
-VS D , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7316
- 4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
V G S = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( ° C)
10
20
300
EAS , Single Pulse Avalanche Energy (mJ)
0.12
I D = -4.9A
0.04
0.00
0
3
6
9
12
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.08
30
-ID , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
V G S = -4.5V
0.2
15
A
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
-VGS , Gate -to-Source Voltage (V)
Starting T J, Junction Temperature ( °C)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
IRF7316
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1200
C, Capacitance (pF)
1000
20
C iss
800
C oss
600
400
C rss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
Q G , Total Gate Charge (nC)
- V D S , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7316
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
7
1
2
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
6
5
H
E
-A-
3
e
6X
0.25 (.010)
4
M
A M
e
K x 45°
e1
e1
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
L
8X
A1
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7316
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
N O TE S :
1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) .
3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1.
3 30 .00
(12 .9 92 )
MAX.
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
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Data and specifications subject to change without notice.
2/97