IRFY140C MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) VDSS ID(cont) RDS(on) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.07 (0.500) 19.05 (0.750) 1 2 3 FEATURES 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO–257AA – Metal Package Pad 1 – Gate 100V 15A Ω 0.092Ω Pad 2 – Drain Pad 3 – Source • HERMETICALLY SEALED TO–257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 15A ID Continuous Drain Current @ Tcase = 100°C 10A IDM Pulsed Drain Current 60A PD Power Dissipation @ Tcase = 25°C 50W Linear Derating Factor 0.48W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RθJC Thermal Resistance Junction to Case 2.1°C/W max. RθJA Thermal Resistance Junction to Ambient 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97 IRFY140C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Resistance VGS(th) Gate Threshold Voltage V / °C 0.092 Ω 4 V (Ω) S(Ω VGS = 10V ID = 12A VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 12A 9.1 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1660 Coss Output Capacitance VDS = 25V 550 Crss Reverse Transfer Capacitance f = 1MHz 120 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 15 ISM Pulse Source Current 60 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 15A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. VGS = 10V ID = 15A nA nC 59 ID = 15A 2.4 12 VDS = 0.5BVDSS 12 30.7 nC 21 VDD = 50V 145 ID = 15A 64 RG = 9.1Ω IS = 15A µA pF 30 VDS = 0.5BVDSS Unit V 0.1 ID = 1mA Static Drain – Source On–State Max. 100 Reference to 25°C Breakdown Voltage Typ. ns 105 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. A 1.5 V 400 ns 2.4 µC nH Prelim. 6/97