PD -91418B IRGMH40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses VCES = 1200V VCE(on) max = 3.6V G @VGE = 15V, IC = 13A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 1200 13 48 24 48 ± 20 96 36 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 1.3 — 48 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/20/02 IRGMH40F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Emitter-to-Collector Breakdown Voltage ➂ 17 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 1.1 ––– 2.4 VCE(ON) Collector-to-Emitter Saturation Voltage ––– 3.1 ––– 2.6 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 gfe Forward Transconductance T 5.0 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 250 µA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 3.6 IC = 13A ––– IC = 24A See Fig.2, 5 V ––– IC = 13A , TJ = 125°C 5.5 VCE = VGE, IC = 250 µA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 13A 100 VGE = 0V, VCE = 960V µA 1200 VGE = 0V, VCE = 960V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 56 12 20 25 14 270 270 0.5 2.6 3.1 25 14 450 650 7.5 6.8 Max. Units Conditions 84 IC = 13A 18 nC VCC = 400V See Fig. 8 30 VGE = 15V ––– IC = 13A, VCC = 960V ––– Energy losses include "tail" ns ––– See Fig. 9, 10, 14 ––– ––– mJ ––– 4.7 ––– TJ = 125°C ––– IC = 13A, VCC = 960V ns ––– VGE = 15V, RG = 10Ω ––– Energy losses include "tail" ––– mJ See Fig. 11, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 1400 ––– VGE = 0V ––– 82 ––– pF VCC = 30V See Fig. 7 ––– 17 ––– ƒ = 1.0MHz Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGMH40F 30 F or b o th : 25 Load C urre nt (A) T ria n g u la r w av e : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d ri ve a s s p e c ifi e d P o w e r D is s ip a tio n = 2 3 W C la m p vo lta g e: 8 0 % o f ra te d 20 S q u a re w a v e : 15 6 0 % o f ra ted v o lta g e 10 5 Id e a l d io d e s A 0 0.1 1 10 100 f, Fre q u e n cy (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 VGS 20V 15V 10V 7.0V BOTTOM 6.0V I C , C ollec to r-to -E m itte r C u rren t (A ) I C , C o llector-to-Em itter Cu rrent (A) 1000 TOP 100 10 1 6 .0 V 20 µ s P U LS E W ID TH TC = 2 5°C 0.1 1 10 VCE , C ollector-to-Em itter Vo ltag e (V) Fig. 2 - Typical Output Characteristics www.irf.com A 100 VGS 20V 15V 10V 7.0V BOTTOM 6.0V TOP 100 10 6 .0 V 1 20 µ s P U LS E W ID TH TC = 1 50 °C 0.1 1 10 A 100 VCE , C ollector-to-Em itter Vo ltag e (V) Fig. 3 - Typical Transfer Characteristics 3 IRGMH40F 4.0 V G E = 1 5V V CE , C olle ctor-to-E m itter V olta ge (V ) M axim um D C C ollector C u rren t (A ) 24 20 16 12 8 4 A 0 25 50 75 100 125 150 VGE = 15V 8 0 µ s P UL S E W ID TH IC = 2 6 A 3.5 3.0 2.5 I C = 13 A 2.0 I C = 6 .5 A 1.5 A 1.0 -60 -40 TC , C ase Tem p era tu re (°C ) -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem pe ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature T herm al R es pon se (Z thJ C ) 10 1 D = 0.5 0 0.20 PD M 0.10 0.1 t 0 .05 N o te s: 1 . D u ty fa c to r D = t SING L E P U LS E (T H ER M A L R E SP O NS E) 0.01 0.00001 1 t2 0 .02 0 .01 0.0001 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.001 0.01 0.1 A 1 t 1 , Re ctan gular Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGMH40F V GE = C ie s = C re s = C oes = C , C apa cita nce (pF ) 2000 20 0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C gc V G E , G ate-to-E m itter Vo ltag e (V) 2500 C ie s 1500 C oes 1000 500 C re s A 0 1 10 VCE = 400V I C = 13A 16 12 8 4 A 0 100 0 10 V C E , C o llec to r-to -E m itte r V olta ge (V ) To ta l S w itchin g Los ses (m J) T otal Sw itc hing Los se s (m J ) = 960V = 15V = 2 5 °C = 13A 3.3 3.2 3.1 A 3.0 0 10 20 30 40 50 60 R G , G a te R e sis ta n c e (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 VCC VGE TC IC 30 Q g , To ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 3.4 20 R G = 10 Ω V G E = 1 5V V C C = 9 60 V I C = 26 A 10 IC = 1 3 A I C = 6 .5 A 1 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Ca se Tem perature (°C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGMH40F RG TC V CC V GE 16 100 = 1 0Ω = 1125°C 5 0 °C = 9 6 0V = 15V I C , C o lle cto r-to -E m itte r C u rre n t (A ) T otal S w itch in g Los ses (m J ) 20 12 8 4 A 0 6 10 14 18 22 26 30 I C , C olle ctor-to-Em itte r C urren t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 2 0 V T J = 1 2 5 °C S A F E O P E R A TIN G A R E A 10 A 1 1 10 100 1000 10000 VC E , C o lle c to r-to -E m itte r V o ltag e (V ) Fig. 12 - Turn-Off SOA www.irf.com IRGMH40F L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V 960V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 960V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRGMH40F Notes: Q Repetitive rating; VGE = 20V, pulse width limited by S Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. T Pulse width 5.0µs, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 13.84 [.545] 13.59 [.535] B C 2 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 3 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] 2X 3.81 [.150] 2X 0.36 [.014] B A B A NOTE S : 1. 2. 3. 4. DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHE S ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUTLINE T O-254AA. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com