PD -94305D IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency • Switching-loss Rating includes all "tail" Losses • Ceramic Eyelets VCES = 600V VCE(on) max = 2.1V G @VGE = 15V, IC = 20A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 35* 20 140 140 ± 20 125 50 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g Thermal Resistance Parameter R thJC Junction-to-Case www.irf.com Min Typ Max Units — — 1.1 Test Conditions °C/W 1 02/08/02 IRG4MC40U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage S 17 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.5 ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– ––– ––– VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 gfe Forward Transconductance T 11 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 1.0 mA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 2.1 IC = 20A 2.5 V IC = 35A See Fig.2, 5 2.0 IC = 20A , TJ = 125°C 6.0 VCE = VGE, IC = 1.0 mA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 20A 50 VGE = 0V, VCE = 480V µA 2000 VGE = 0V, VCE = 480V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Ets td(on) tr td(off) tr Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Rise Time Total Switching Loss Total Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 6.8 Max. Units Conditions 150 IC = 20A 25 nC VCC = 300V See Fig. 8 60 VGE = 15V 50 TJ = 25°C 42 IC = 20A, VCC = 480V ns 190 VGE = 15V, RG = 9.1Ω 120 Energy losses include "tail" 1.0 mJ See Fig. 10, 11, 13, 14 40 TJ = 125°C, 40 ns IC = 20A, VCC = 480V 300 VGE = 15V, RG = 9.1Ω 250 Energy losses include "tail" 1.8 mJ See Fig. 13, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) 2215 ––– VGE = 0V 135 ––– pF VCC = 30V See Fig. 7 25 ––– ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 9.1Ω, S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. (See fig. 13a) 2 www.irf.com IRG4MC40U 60 Square wave: Triangular wave: 60% of rated voltage 50 Load Current ( A ) Clamp voltage: 80% of rated Ideal diodes 40 30 For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 29W 20 10 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 100 10 TJ = 150 °C TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C TJ = 25 °C 10 V = 50V 5µs PULSE WIDTH CC 1 4 6 8 10 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4MC40U 50 3.0 VCE , Collector-to Emitter Voltage (V) LIMITED BY PACKAGE 40 30 20 10 0 VGE = 15V 80µs PULSE WIDTH IC = 40A IC = 20A 2.0 IC = 10A 1.0 25 50 75 100 125 150 -60 -40 -20 T J , Junction Temperature (°C ) 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) Maximum DC Collector Current ( Α) VGE = 15V 1 D = 0.50 0.20 P DM 0.10 0.1 0.01 0.00001 t1 0.05 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4MC40U 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 4000 Cies 2000 C oes 1000 Cres 10 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 1.00 VCC = 480V VGE = 15V TJ = 25°C RG = 9.1Ω VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 300V 400V I C = 20A 16 0 1 I C = 20A 0.75 IC = 40A VCC = 480V IC = 20A 1 IC = 10A 0.1 0.50 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4MC40U 1000 RG = 9.1Ω TJ = 125°C 150°C VGE = 15V VCC = 480V 3.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 4.0 2.0 1.0 0.0 100 SAFE OPERATING AREA 10 1 10 20 30 40 IC , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4MC40U L D .U .T. VC * 50V RL = 0 - 720V 1 00 0V 720V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 720V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4MC40U Case Outline and Dimensions — TO-254AA 0.12 [.005] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C 2 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 17.40 [.685] 16.89 [.665] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 3 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] NOTES : 1. 2. 3. 4. 2X 0.36 [.014] B A B A DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com