PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses VCES = 600V VCE(on) max = 2.0V G @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 35* 20 152 152 ± 20 125 50 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g *Current is limited by pin diameter Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 1.0 — 48 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/20/02 IRGMC40F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage ➂ 24 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.7 ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– 2.2 ––– 1.9 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 gfe Forward Transconductance T 9.2 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 1.0 mA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 2.0 IC = 20A ––– IC = 35A See Fig.5 V ––– IC = 20A , TJ = 125°C 5.5 VCE = VGE, IC = 250 µA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 20A 50 VGE = 0V, VCE = 480V µA 1000 VGE = 0V, VCE = 480V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Cies Coes Cres Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 58 8.0 30 ––– ––– ––– ––– 0.6 3.8 4.4 28 37 380 460 7.0 6.8 Max. Units Conditions 116 IC = 20A 16 nC VCC = 300V See Fig. 8 60 VGE = 15V 52 IC = 20A, VCC = 480V 74 VGE = 15V, RG = 9.1Ω ns 410 Energy losses include "tail" 420 See Fig. 9, 10 & 13 ––– mJ ––– 9.0 ––– TJ = 125°C ––– IC = 20A, VCC = 480V ns ––– VGE = 15V, RG = 9.1Ω ––– Energy losses include "tail" ––– mJ See Fig. 11, 13 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 1500 ––– VGE = 0V ––– 190 ––– pF VCC = 30V See Fig. 7 ––– 20 ––– ƒ = 1.0MHz ––– 12 ––– Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGMC40F Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRGMC40F Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGMC40F Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGMC40F 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 www.irf.com IRGMC40F L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 12a - Clamped Inductive Fig. 12b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 13a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 13b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRGMC40F Notes: Q Repetitive rating; VGE = 20V, pulse width limited by S Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. T Pulse width 5.0µs, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 13.84 [.545] 13.59 [.535] B C 2 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 3 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] 2X 3.81 [.150] 2X 0.36 [.014] B A B A NOTE S : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUT LINE T O-254AA. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com