IRF IRHYK57133CMSE

PD - 96898
RADIATION HARDENED
IRHYK57133CMSE
POWER MOSFET
130V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-257AA) 5 TECHNOLOGY
™
™
Product Summary
Part Number
Radiation Level
IRHYK57133CMSE 100K Rads (Si)
RDS(on)
0.082Ω
ID
20A
Low-Ohmic
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID@ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pack. Mounting Surface Temp.
Weight
Units
20
12.5
80
75
0.6
±20
73
20
7.5
11.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5s)
3.7 (Typical)
C
g
For footnotes refer to the last page
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1
10/28/04
IRHYK57133CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
130
—
—
V
VGS = 0V, ID = 1.0mA
—
0.09
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.082
Ω
2.5
7.4
—
—
—
—
—
—
4.5
—
10
25
V
S( )
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
48
16
18
20
100
35
40
—
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1020
285
10
0.77
—
—
—
—
nA
nC
V DS = VGS, ID = 1.0mA
VDS = 15V, IDS = 12.5A Ã
VDS = 104V ,VGS=0V
VDS = 104V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 20A
VDS = 65V
VDD = 65V, ID = 20A
VGS =12V, RG = 7.5Ω
ns
nH
pF
Ω
Test Conditions
VGS = 12V, ID = 12.5A Ã
Ω
BVDSS
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
20
80
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
200
1.5
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 20A, VGS = 0V Ã
Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYK57133CMSE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-State„
Resistance (Low-Ohmic TO-257)
„
Diode Forward Voltage
Units
Test Conditions ˆ
Min
Max
130
2.0
—
—
—
—
4.5
100
-100
10
nA
µA
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 104V, VGS= 0V
—
0.082
Ω
VGS = 12V, ID = 12.5A
—
0.082
Ω
VGS = 12V, ID = 12.5A
1.2
V
VGS = 0V, ID = 20A
—
V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
39.5
130
130
130
130
130
32.5
130
130
130
100
50
28.4
130
120
30
—
—
Energy
(MeV)
309
341
350
150
VDS
120
Br
90
I
60
Au
30
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYK57133CMSE
Pre-Irradiation
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1
0.1
5.0V
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
1
5.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH Tj = 25°C
0.1
0.01
0.1
1
10
100
0.1
1000
Fig 1. Typical Output Characteristics
100
1000
3.0
T J = 150°C
10
T J = 25°C
1
0.1
VDS = 50V
15
60µs PULSE WIDTH
0.01
5
6
7
8
9
10
11
12
13
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
100
4
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID = 20A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2400
IRHYK57133CMSE
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
1600
Ciss
1200
Coss
800
400
Crss
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
VDS = 104V
VDS = 65V
VDS = 26V
ID = 20A
VGS, Gate-to-Source Voltage (V)
2000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150°C
T J = 25°C
10
10
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.8
1ms
1
VGS = 0V
1.0
100µs
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHYK57133CMSE
Pre-Irradiation
20
RD
VDS
ID, Drain Current (A)
VGS
D.U.T.
RG
15
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
P DM
0.02
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t1
t2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYK57133CMSE
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
140
ID
8.9A
12.6A
BOTTOM 20A
120
TOP
100
80
60
40
20
0
25
V(BR)DSS
50
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHYK57133CMSE
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.36 mH
Peak IL = 20A, VGS = 12V
 ISD ≤ 20A, di/dt ≤ 690A/µs,
VDD ≤ 130V, TJ ≤ 150°C
12 volt V GS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
104 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low Ohmic TO-257AA
0.13 [.005]
10.66 [.420]
10.42 [.410]
A
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
C
1
2
B
15.49 [.610]
14.73 [.580]
3
0.889 [.035]
MAX.
2.79 [.110]
2.29 [.090]
2.54 [.100]
2X
3X
0.88 [.035]
0.64 [.025]
0.25 [.010]
NOT ES :
1.
2.
3.
4.
3.17 [.125]
2.92 [.115]
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
B A
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 10/2004
8
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