IRIS-F6426S Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Package Outline • Low start-up circuit current (100uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Built-in step drive circuit • Built-in low frequency PRC mode (≒20kHz) • Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) TO-247 Fullpack (5 Lead) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX • Thermal Shutdown with latch mode (TSD) IRIS-F6426S Descriptions 450 0.58Ω AC input(V) Pout(W) Note 1 100±15% 145 120±15% 190 IRIS-F6426S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-F6400 GND Vin D S OCP/FB www.irf.com IRIS-F6426S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 3-2 16 A EAS Vin Vth Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage 3-2 4-5 1-5 P D1 Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 3-2 327 35 6 52 2.8 mJ V V W W 4-5 0.49 W - -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ P D2 TF Top Tstg Tch Terminals Max. Ratings 3-2 16 *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve Units A Note Single Pulse V2-5=0.78V Ta=-20~+125℃ Single Pulse IL peak=6.7A With infintite heatsink Without heatsink Specified by Vin×Iin Refer to recommended operating temperature Fig.1 V2-5 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 5 due to patterning, the maximum switching current decreases as shown by V2-5 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. www.irf.com IRIS-F6426S Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Tth(2) TOFF(MIN) Vth(1) Vth(2) IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Definition Operation start voltage Operation stop voltage Circuit current in operation Circuit current in non-operation Maximum OFF time Minimum time for input of quasi resonant signals *6 Minimum OFF time *7 O.C.P/F.B Pin threshold voltage 1 O.C.P/F.B Pin threshold voltage 2 O.C.P/F.B Pin extraction current O.V.P operation voltage Latch circuit sustaining current *8 Latch circuit release voltage *8 Thermal shutdown operating temperature MIN 14.4 9 45 Ratings TYP 16 10 - MAX 17.6 11 20 100 55 Units V V mA µA µsec 0.68 1.3 1.2 20.5 6.6 140 0.73 1.45 1.35 22.5 - 1 2 0.78 1.6 1.5 24.5 400 8.4 - µsec µsec V V mA V µA V ℃ Test Conditions Vin=0→17.6V Vin=17.6→9V Vin=14V Vin=0→24.5V Vin=24.5→8.5V Vin=24.5→6.6V *6 Refer to Recommended operating conditions *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 450 - - V V5- 2 =0V(short) ID=300µA VDSS Drain-to-Source breakdown voltage VDS =450V IDSS Drain leakage current - - 300 µA - - 0.58 250 Ω nsec V5-2=0V(short) V5-2=10V RDS(ON) On-resistance tf Switching time ID=3.3A Between channel and θch-F Thermal resistance - - 1.1 ℃/W internal frame www.irf.com IRIS-F6426S IRIS-F6426S IRIS-F6426S MOSFET A.S.O. Curve A.S.O. temperature derating coefficient curve 100 A.S.O. temperature derating coefficient[%] 100 Drain current limit by ON resistance 80 0.1ms 10 Drain CurrentD I[A] 1ms 60 40 1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0.1 20 0 0 20 40 60 80 100 120 0.01 1 10 100 D rain-to-Source V oltage V D S[V ] Internal frame temperature TF [℃] 1000 IRIS-F6426S Maximum Switching current derating curve Ta=‐20～+125℃ IR IS-F64 26S A valanche en ergy derating cu rve 18.0 1 00 EAS temperature derating coefficient [%] Maximum Switchng Current IDMAX[A] 16.0 14.0 12.0 10.0 8.0 6.0 4.0 80 60 40 20 2.0 0.0 0.70 0 0.80 0.90 1.00 V2-5 [V] 1.10 1.20 25 50 75 1 00 1 25 1 50 C h ann el tem peratu re Tch [℃ ] www.irf.com IRIS-F6426S IRIS-F6426S MOSFET Ta-PD1 Curve IRIS-F6426S MIC TF-PD2 Curve 0.6 60 PD1=52[W] PD2=0.49[W] 0.5 Power dissipation PD2[W] With infinite heatsink 40 30 20 Without heatsink 10 0.4 0.3 0.2 0.1 PD1=2.8[W] 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] Ambient temperature Ta[℃] IRIS-F6426S Transient thermal resistance curve 10 Transient thermal resistance θch-c[℃/W] Power dissipation P D1[W] 50 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m tim e t [sec] www.irf.com IRIS-F6426S Block Diagram 4 Vin START O.V.P. 3 D LATCH DRIVE REG. 2 S T.S.D Vth(1) 1 OCP/FB + O.S.C - Vth(2) + 5 GND Lead Assignments Pin No. Symbol 1 2 3 4 5 OCP/FB S D Vin GND Description Overcurrent / Feedback Pin Source Pin Drain Pin Power supply Pin Ground Pin Function Input of overcurrent detection signal / constant voltage control signal MOSFET source MOSFET drain Input of power supply for control circuit Ground Other Functions O.V.P. – Overvoltage Protection Circuit OCP/FB S D T.S.D. – Thermal Shutdown Circuit STEP DRV – 2 step drive circuit Vin GND www.irf.com IRIS-F6426S Case Outline 5.5±0.2 3.45±0.2 IR (4) 7 ±0.5 3.3 IRIS 3.3±0.5 23 ±0.3 5.5±0.2 ±0.2 2 ±0.2 φ3.2 +0.2 1.35-0.1 +0.2 1.75-0.1 3.35±0.1 R-end R-end 2-(R1.3) +0.2 0.65-0.1 +0.2 0.85-0.1 4xP2.54±0.1=(10.16) 4.5±0.7 15.6±0.2 a：Type Number F6426S b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals Weight : Approx. 7.5g Dimensions in mm DWG.No.：4B-E01515A 0.5 1 2 3 0.5 4 5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com