Data Sheet No. PD 96948A IRIS-G6624 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (100uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit TO-220 Fullpack (5 Lead) • Built-in soft drive circuit • Built-in low frequency PRC mode (≒20kHz) • Various kinds of protection functions Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) 100±15% 98 IRIS-G6624 450 1.0Ω 120±15% 130 • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD) Descriptions Pout(W) Note 1 Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ONduty is narrow, the Pout (W) shall become lower than that of above. IRIS-G6624 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-G6600 OCP/FB Vin GND S D www.irf.com IRIS-G6624 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 Terminals Max. Ratings 1-2 14.4 1-2 EAS Vin Vth Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage 1-2 4-3 5-3 P D1 Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature P D2 TF Top Tstg Tch Units A A 14.4 1-2 67 35 6 26 1.5 mJ V V W W 4-3 0.8 W -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve - Note Single Pulse V2-3=0.78V Ta=-20~+125℃ Single Pulse VDD=99V, L=20mH IL peak=2.3A With infintite heatsink Without heatsink Specified by Vin×Iin Refer to recommended operating temperature Fig.1 V2-3 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. www.irf.com IRIS-G6624 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Tth(2) TOFF(MIN) Vth(1) Vth(2) IOCP/FB Vin(OVP) Iin(H) in(La.OFF) V Tj(TSD) Definition Operation start voltage Operation stop voltage Circuit current in operation Circuit current in non-operation Maximum OFF time Minimum time for input of quasi resonant signals *6 Minimum OFF time *7 O.C.P/F.B Pin threshold voltage 1 O.C.P/F.B Pin threshold voltage 2 O.C.P/F.B Pin extraction current O.V.P operation voltage Latch circuit sustaining current *8 Latch circuit release voltage *8 Thermal shutdown operating temperature MIN 14.4 9 45 Ratings TYP 16 10 - MAX 17.6 11 30 100 55 Units V V mA µA µsec 0.68 1.3 1.2 20.5 6.6 140 0.73 1.45 1.35 22.5 - 1 1.5 0.78 1.6 1.5 24.5 400 8.4 - µsec µsec V V mA V µA V ℃ Test Conditions Vin=0→17.6V Vin=17.6→9V Vin=14V Vin=0→24.5V Vin=24.5→8.5V Vin=24.5→6.6V - *6 Recommended operating conditions Tth(2)≧1.0μsec Time for input of quasi resonant signals For the quasi resonant signal inputted to OCP/FB Pin ＶO.C.P/F.B at the time of quasi resonant operation, the signal shall Vth(2) 0V be wider than Tth(2). *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 450 - - V V3- 2 =0V(short) ID=300µA VDSS Drain-to-Source breakdown voltage VDS =450V IDSS Drain leakage current - - 300 µA - - 1 250 Ω nsec V3-2=0V(short) V3-2=10V RDS(ON) On-resistance tf Switching time ID=1.8A Between channel and θch-F Thermal resistance - - 2 ℃/W internal frame www.irf.com IRIS-G6624 IRIS-G6624 MOSFET A.S.O. Curve IRIS-G6624 A.S.O. temperature derating coefficient curve 100 Drain current limit by ON resistance 80 10 Drain Current ID D [A] A.S.O. temperature derating coefficient[%] 100 Ta=25ºC Single Pulse 60 40 1ms 1 0.1 20 0 0 20 40 60 80 100 0.1ms ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0.01 120 1 Internal frame temperature TF [℃] IRIS-G6624 10 100 1000 Drain-to-Source Voltage VDS [V] IRIS-G6624 Avalanche energy derating curve Maximum Switching current derating curve T a=‐20 ～+125 ℃ 100 16.0 10.0 EAS temperature derating coefficient[%] DMAX 12.0 Maximum Switchng Current I [A] 14.0 8.0 6.0 4.0 80 60 40 20 2.0 0 0.0 0.8 0.9 1.0 V2-3 [V] 1.1 1.2 25 50 75 100 125 150 Channel temperature Tch [℃] www.irf.com IRIS-G6624 IRIS-G6624 MOSFET Ta-PD1 Curve IRIS-G6624 MIC TF-PD2 Curve 30 0.9 PD1=26[W] PD2=0.8[W] 0.8 25 Power dissipation PD2[W] With infinite heatsink 20 15 10 0.6 0.5 0.4 0.3 0.2 Without heatsink 5 0.1 PD1=1.5[W] 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] Ambient temperature Ta[℃] IRIS-G6624 Transient thermal resistance curve 10 Transient thermal resistance θch-c[℃/W] Power dissipation P D1[W] 0.7 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m tim e t [sec] www.irf.com IRIS-G6624 Block Diagram 4 Vin START 1 D LATCH O.V.P. DRIVE REG. 2 S T.S.D Vth(1) - 5 OCP/FB + O.S.C - Vth(2) + 3 GND Lead Assignments 1 2 3 4 Symbol D S GND Vin 5 OCP/FB Pin No. IRIS Description Drain Pin Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Function MOSFET drain MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit D S GND Vin OCP/FB www.irf.com IRIS-G6624 Case Outline 4.2 ±0.2 φ3.2 ±0.2 16.9 ±0.3 7.9 ±0.2 4 ±0.2 2.8 ±0.2 IRIS a b R-end (4.6) 0.94 ±0.15 2-(R1) +0.2 0.85 -0.1 8.7 ±0.5 4.1 ±0.5 2.6 ±0.1 +0.2 0.45 -0.1 5.08 ±0.6 4xp1.7±0.1=(6.8) 10 ±0.2 0.7 1 2 3 4 5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip 0.7 a：Type Number G6624 b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals 5th letter : Registration Symbol Weight : Approx. 2.3g Dimensions in mm DWG.No.：TG3A-1128 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com