Data Sheet No. PD60196 IRIS4009(K) INTEGRATED SWITCHER Features • Primary current mode control, and secondary Packages voltage mode control • Vcc Over-voltage protection (latched) • Over-current & over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO-220 and TO-262 • 8.0Ω Rds(on) max/ 650V MOSFET • Fully Characterized Avalanche Energy IRIS4009 5 Lead TO-220 IRIS4009K 5 Lead TO-262 Description The IRIS4009(K) is a dual mode voltage and current controller combined with a MOSFET in a single package. The IRIS4009(K) is designed for use in universal and single input AC/DC and DC/DC switching power supplies and is capable of powers up to 30W for a universal line input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IRIS4009(K) FB Source 1 5 Gnd 2 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our DesignTips and Application Notes (AN1018a, AN1024a, AN1025) for proper circuit board layout. www.irf.com 1 IRIS4009(K) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings IDpeak Peak drain current 3-1 3.9 IDmax Maximum switching current 3-1 1.5 Units Note Single pulse A V2-3 = 0.78V Tc=25o C EAS Single pulse avalanche energy 3-1 100 VCC Power supply voltage 4-3 35 VTH OCP/FB terminal voltage 5-2 6 PD1 Power dissipation for MOSFET 3-1 mJ V 62.5 1.1 PD2 Power dissipation for control part (MIC) 4-2 RthJC Thermal resistance, junction to case — 2.0 TJ Junction temperature — -40-125 TS Storage temperature — -40-125 Tf Internal frame temperature in operation — -20-125 TOP Ambient operating temperature — -20-125 TL Lead temp. (soldering, 10 seconds) — 300 Vdd=50V,L=20mH, G=12V, Ipk=1.5A With infinite heatsink W 0.8 Without heatsink Specified by VIN x I IN °C/W °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VDCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) 2 VOCP/FB Tth(2) ≥1.0µ s Vth(2) www.irf.com IRIS4009(K) Electrical Characteristics (for Control IC) VCC = 18V, (TA = 25°C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VCC supply undervoltage positive going threshold 14.4 16 17.6 VCCUV- VCC supply undervoltage negative going threshold 9 10 11 IQCCUV UVLO mode quiescent current — — 100 µA Quiescent operating VCC supply current — — 30 mA Maximum OFF time 40 — 60 Minimum input pulse width for quasi resonant signals — — 1.0 Minimum OFF time — — 1.5 IQCC TOFF/(MAX) TTH(2) TOFF/(MIN) VTH(1) OCP/FB terminal threshold voltage 1 0.68 0.73 0.78 VTH(2) OCP/FB terminal threshold voltage 2 1.3 1.45 1.6 IOCP/FB VCC(OVP) ICC(LA) VCC(LaOFF) TJ(TSD) OCP/FB terminal sink current V µsec V 1.1 1.35 1.7 mA 20.5 22.5 24.5 V Latch circuit holding current — — 400 µA Latch circuit reset voltage 6.6 — 8.4 V — oC VCC overvoltage protection limit Thermal shutdown activation temperature 140 — VCC < VCCUV+ Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol Definition VDSS Drain-to-source breakdown voltage IDSS Drain leakage current Min. Typ. Max. Units Test Conditions 650 — — V — — 300 µA Vds=520V, VCC=0V Tj =125o C RDS(ON) tr THj-C On-resistance — — 8.0 Ω Rise time (10% to 90%) Thermal resistance — — — — 120 2.0 o C/W www.irf.com V3-1=10V, ID=0.85A ns Between junction and case 3 IRIS4009(K) Block Diagram 4 Vcc 3 START O.V.P D LATCH DRIVE REG. 1 OSCILLATOR T.S.D S Vth(1) + 5 Comp.1 - OCP/ FB Vth(2) + Comp.2 2 Ground Lead Assignments 1 2 3 4 Pin # Symbol Description 1 S MOSFET Source terminal 2 Ground 3 D MOSFET Drain terminal 4 Vcc Control circuit supply voltage 5 OCP/FB Ground terminal 5 Overcurrent detection, and Voltage mode control feedback signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 www.irf.com IRIS4009(K) Case outline 5-Lead TO-220 www.irf.com 01-6020 00 01-3042 01 (TS-001) 5 IRIS4009(K) Case outline 10.29 [.405] 4.83 [.190] 9.65 [.380] 4.06 [.160] 1.40 [.055] MAX. B 1.32 [.052] 1.22 [.048] 6.22[.245] MIN 6 9.65 [.380] 6 8.64 [.340] 1 2 3 4 8.00[.315] MAX 5 C 12.70 [.500] 14.73 [.580] 5X 1.01[.040] 0.51[.020] 5X 0.63 [.025] 0.31 [.012] 1.70 [.067] 4X 0.25 [.010] A B 2.92 [.115] 2.16 [.085] 5-Lead TO-262 IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 12/3/2001 6 www.irf.com