Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of VBO > 2000 V please contact us. © 2000 IXYS All rights reserved H-1 IXBOD 1 -06...10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V IAVM = 0.9 A A K 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 Symbol Conditions ID TVJ = 125°C; Ratings 20 V = 0,8x VBO VBO µA VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)] f = 50 HZ; 1.4 A 0.9 A 200 A 2 A2s Tamb -40...+125 °C Tstg -40...+125 °C IRMS Tamb = 50°C connection pins soldered to printed circuit (conductor 0,035x2mm) IAVM ISM tp = 0.1 ms; Tamb = 50°C non repetitive I²t tp = 0.1 ms; Tamb = 50°C TVJm KT Temperatur coefficient of VBO KP coefficient for energy per pulse EP (material constant) - natural convection - with air speed 2 m/s Weight Symbol Conditions IBO TVJ = 25°C IH TVJ = VH TVJ = 50°C; °C K-1 700 K/Ws 60 45 K/W K/W 1 g Dimensions in mm (1 mm = 0.0394") Characteristic Values 15 mA 25°C 30 mA 25°C 4-8 V > 1000 V/µs 200 A/µs 150 µs (dv/dt)C TVJ = (di/dt)C TVJ = 125°C; tq(typ) TVJ = 125°C VD = 0.67·VBO ; VR = 0V dV/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs VT TVJ =125°C; IT = 5A V(TO) rT For power-loss calculations only TVJ = 125°C VD = 0.67·(VBO + 100V) VD = VBO ; IT = 80A; f = 50 Hz 1.7 V 1.1 0.12 V Ω K IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-2 A 030 RthJA 125 2·10-3 © 2000 IXYS All rights reserved IXBOD 1 -06...10 Fig. 1 Energy per pulse for trapezoidal current wafeforms (see waveform definition). Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveforms definition). Va = 0 m/s Va = 2 m/s [V] [K/W] ZthJA VT TVJ = 125°C TVJ = 25°C iT Fig. 3 On-state voltage © 2000 IXYS All rights reserved [A] t [s] Fig. 4 Transient thermal resistance. H-3 IXBOD 1 -12R...42R(D) Breakover Diode Modules Version: RD Version: R VBO Standard BOD - VBO Standard BOD - VBO Standard V Types Elements V Types Elements V Types IXBOD 1 -12R(D) IXBOD 1 -13R(D) IXBOD 1 -14R(D) IXBOD 1 -15R(D) IXBOD 1 -16R(D) IXBOD 1 -17R(D) IXBOD 1 -18R(D) IXBOD 1 -19R(D) 2 2 2 2 2 2 2 2 2000 ±50 2100 ±50 2200 ±50 2300 ±50 2400 ±50 2500 ±50 2600 ±100 2800 ±100 3000 ±100 3200 ±100 IXBOD 1 -20R(D) IXBOD 1 -21R(D) IXBOD 1 -22R(D) IXBOD 1 -23R(D) IXBOD 1 -24R(D) IXBOD 1 -25R(D) IXBOD 1 -26R(D) IXBOD 1 -28R(D) IXBOD 1 -30R(D) IXBOD 1 -32R(D) 3 3 3 3 3 3 3 3 3 3 2 BODs 3 BODs 4 BODs 2-3 BODs D-Version 100 100 100 100 1200 1300 1400 1500 1600 1700 1800 1900 ±50 ±50 ±50 ±50 ±50 ±50 ±50 ±50 Symbol Test Conditions ID TVJ = 125°C;V = 0,8x VBO 3400 3600 3800 4000 4200 VBO IRMS ±100 ±100 ±100 ±100 ±100 BOD Elements IXBOD 1 -34R IXBOD 1 -36R IXBOD 1 -38R IXBOD 1 -40R IXBOD 1 -42R 4 4 4 4 4 µA VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)] f = 50 HZ; Tamb = 50°C 2.0 1.4 1.1 0.3 A connection pins soldered to printed circuit (conductor 0,035x2mm) IAVM 1.25 0.9 0.7 0.2 A 200 200 200 50 A 2 2 2 0.125 A2s TVJ =125°C; IT = 5A 3.4 5.1 6.8 27 V V(TO) For power-loss calculations only 2.2 3.3 4.4 17.5 V rT TVJ =125°C 0.24 0.36 0.48 3 Ω Tamb -40...+125 Tstg -40...+125 TVJm 125 KT Temperatur coefficient of VBO 2·10-3 KP coefficient for energy per pulse EP (material constant) 700 -40...+125 -40...+125 125 2·10-3 700 -40...+125 -40...+125 125 2·10-3 700 -40...+125 -40...+125 125 2·10-3 700 °C °C °C K-1 K/Ws ISM tp = 0.1 ms; Tamb = 50°C non repetitive I²t tp = 0.1 ms; Tamb = 50°C VT - natural convection - with air speed 2 m/s 20 16 20 16 20 16 20 16 K/W K/W Weight typical 14 14 14 14 g Symbol Test Conditions Characteristic Values both Versions R & RD 2 BODs 3 BODs 4 BODs IBO TVJ = 25°C 15 15 15 mA IH TVJ = 25°C 30 30 30 mA VH TVJ = 25°C 4-8 4-8 4-8 V (dv/dt)C TVJ = 50°C; VD = 0.67·(VBO + 100V) - VBO bis 1500V - VBO 1600 - 2000V - VBO 2100 - 2500V - VBO 2600 - 3000V - VBO 3200 - 3400V - VBO 3600 - 4200V > 1000 > 1500 - > 2000 > 2500 - > 3000 > 3500 V/µs V/µs V/µs V/µs V/µs V/µs 200 200 200 A/µs 150 150 150 µs (di/dt)C TVJ = 125°C; tq(typ) TVJ = 125°C VD = 0.67·VBO ; VR = 0V dv/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs VD = VBO ; IT = 80A; f = 50 Hz IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-4 032 RthJA © 2000 IXYS All rights reserved IXBOD 1 -12R...42R(D) A K K A Dimensions in mm (1 mm = 0.0394") Fig. 5 Energy per pulse for single BOD element for trapezoidal wave current. EP must be multiplied by number of elements for total energy. Fig. 6 Energy per pulse for single BOD element for exponentially decaying current pulse. EP must be multiplied by number of elements for total energy. n = number of BOD-Elements in series [V] [K/W] ZthJA VT Va = 0 m/s Va = 2 m/s iT Fig. 7 On-state voltage at TVJ = 125°C. © 2000 IXYS All rights reserved t [s] [A] Fig. 8 Transient thermal resistance. H-5 Application Protection of thyristors against overvoltages in forward direction. i Thyristor VBO (TVJ) = VBO, 25°C [1+KT(T VJ - 25°C)] BOD VD Calculation example a. The maximum junction temperature shall be calculated for a module IXBOD 1 -30R at an ambient temperature Ta = 60 °C, an exponentially decaying current ITM = 40A, a pulsewidth tp = 2 µs, an operating frequency f = 50 Hz and natural convection. From the diagram Fig. 6 the energy per pulse is obtained: Ep1 = 6 x 10-3 Ws For a module IXBOD1-30R the number of single IXBOD elements is: n = 3 At natural air cooling the thermal resistance junction to ambient amounts to (Fig.8): RthJA = 20K/W and the unknown temperature can be calculated as: TVJmax1 = Ta + n • f • Ep • RthJA + Kp • Ep b. If following these steady-state conditions an overload for 1 minute occurs with ITM= 60 A and a pulse-width tp = 4 µs at the same operating frequency f = 50 Hz, then the resulting maximum junction temperature is calculating as follows: TVJmax2 = TVJmax1 + (Ep2-Ep1) • n • f •ZthJA(t) + Kp • (Ep2-Ep1) The diagrams Fig. 11 and Fig. 8 show Ep2= 14x10-3 Ws ZthJA(t = 1min) = 12K/W From what follows: TVJmax2 = 82.2 + 14.4 + 5,6 = 102.2 °C which is allowed because the maximum admissible junction temperature TVJM = 125 °C. TVJmax1 = 60 + 18 + 4.2 = 82.2°C H-6 © 2000 IXYS All rights reserved Example of a circuit A simple emergency triggering circuit. R1 T : Thyristor R1 : Current limiting resistance (0 - 200 Ω) D1 : Series-diode (fast recovery diode) D3 : Protection diode D4 : Zener diode, typical VZ : 3-6 V R3 D1 T R 2, C 2 : Protection against parasitic triggering; recommended values: R2 : 100 - 1000 Ω C2 : 22 - 47 nF IXBOD z D4 D3 R2 C3 C2 R 3, C 3 : Snubber network of the thyristor Notice 1. A IXBOD element has a maximum reverse blocking voltage of 10V. 40 A IR 20 2. For higher reverse voltages a fast, soft recovery diode must be connected in series (Fig. 9). This diode must fulfill the conditions of Fig. 10. 10 8 6 4 i IR 2 Fast recovery diode IXBOD single or IXBOD module Fig. 9 IXBOD protection by a fast recovery diode. © 2000 IXYS All rights reserved tB 1 0,1 µs t 1 2 3 5 7 10 tB Fig. 10 Maximum peak value of the reverse current admissible for a given pulse-width tB, which is required for the suitable fast recovery series-diode. H-7 H-8 © 2000 IXYS All rights reserved