HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS(on) = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 23 92 23 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque TO-247 1.13/10 Nm/lb.in. FC Mounting Force TO-268 20...120/4.5...27 N/lb TO-247 TO-268 6 4 TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S G = Gate S = Source Features z z z z Weight g g z z z Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 3 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 TJ = 25°C TJ = 125°C IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z Symbol TAB = Drain z Easy to mount Space savings High power density V 4.5 V ±100 nA 25 1 µA mA 0.42 Ω DS99060A(02/04) IXFH23N80Q IXFT23N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 18 26 S 4900 pF 500 pF 130 pF TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns td(off) RG = 1.5 Ω (External), 74 ns 14 ns 130 nC 26 nC 55 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 TO-247 Source-Drain Diode 0.25 Dim. K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 23 A ISM Repetitive; pulse width limited by TJM 92 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM IF = IS -di/dt = 100 A/µs, VR = 100 V 1 9 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 (IXFT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 22 45 VGS = 10V 7V 6V 18 I D - Amperes 16 40 14 12 10 8 VGS = 10V 35 I D - Amperes 20 5V 6 6V 30 25 5.5V 20 15 5V 10 4 5 4.5V 2 4.5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 15 18 21 24 27 30 V D S - Volts V D S - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 2.8 22 VGS = 10V 6V 18 16 5V 14 12 10 8 6 VGS = 10V 2.5 R D S ( o n ) - Normalized 20 I D - Amperes 12 4.5V 2.2 1.9 I D = 23A 1.6 I D = 11.5A 1.3 1 4 0.7 2 0.4 0 0 2 4 6 8 10 12 14 16 18 20 -50 22 -25 Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID 2.8 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 27 24 VGS = 10V 2.4 TJ = 125ºC 21 2.2 I D - Amperes R D S ( o n ) - Normalized 2.6 0 TJ - Degrees Centigrade V D S - Volts 2 1.8 1.6 1.4 18 15 12 9 6 1.2 TJ = 25ºC 1 3 0.8 0 0 5 10 15 20 25 30 I D - Amperes © 2004 IXYS All rights reserved 35 40 45 50 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 60 30 50 g f s - Siemens I D - Amperes 25 20 15 TJ = 125ºC 25ºC -40ºC 10 TJ = -40ºC 25ºC 125ºC 40 30 20 10 5 0 0 3.5 4 4.5 5 5.5 0 6 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 25 30 35 40 Fig. 10. Gate Charge 10 70 9 60 VDS = 400V I D = 11.5A 8 50 I G = 10mA 7 VG S - Volts I S - Amperes 20 I D - Amperes 40 30 TJ = 125ºC 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 20 40 60 80 100 120 140 Q G - nanoCoulombs Fig. 11. Capacitance Capacitance - picoFarads 10000 C iss 1000 C oss 100 C rss f = 1MHz 10 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 F ig . 1 2 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000