IXYS IXFH36N55Q2

HiPerFETTM
Power MOSFETs
IXFH36N55Q2
VDSS
= 550 V
=
36 A
ID25
RDS(on) = 0.18 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
trr ≤ 250 ns
Preliminary Data Sheet
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
36
144
36
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
50
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
Maximum Ratings
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
(TAB)
G = Gate
S = Source
560
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Weight
6
TAB = Drain
Features
z
z
TC = 25°C
TJ
TJM
Tstg
TO-247 AD (IXFH)
z
z
z
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on), low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
Applications
z
z
g
z
z
z
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
z
z
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
550
2.5
TJ = 25°C
TJ = 125°C
V
5.0
V
±100
nA
25
1
µA
mA
0.18
Easy to mount
Space savings
High power density
Ω
DS99074A(04/04)
IXFH36N55Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
15
26
S
4100
pF
660
pF
160
pF
TO-247 AD (IXFH) Outline
1
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
17
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
ns
td(off)
RG = 2 Ω (External),
42
ns
8
ns
110
nC
23
nC
52
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.22
RthCK
0.25
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
2
Dim.
K/W
K/W
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
36
A
Repetitive; pulse width limited by TJM
144
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
1
9
IF = 25A -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXFH36N55Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25º C
36
90
33
VGS = 10V
30
8V
7V
8V
70
24
21
I D - Amperes
I D - Amperes
27
VGS = 10V
80
6V
18
15
12
5V
9
60
7V
50
6V
40
30
20
6
5V
10
3
4V
0
0
0
1
2
3
4
5
6
7
0
3
6
9
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
33
2.8
27
24
R D S ( o n ) - Normalized
8V
7V
30
I D - Amperes
15
V D S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
36
6V
21
18
15
5V
12
9
6
4V
VGS = 10V
2.5
2.2
1.9
I D = 36A
1.6
I D = 18A
1.3
1
0.7
3
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
V D S - Volts
0.5 ID25 Value vs. ID
3.1
25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
40
VGS = 10V
2.8
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
35
TJ = 125ºC
2.5
30
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.9
1.6
1.3
25
20
15
10
TJ = 25ºC
1
5
0.7
0
0
10
20
30
40
50
I D - Amperes
© 2004 IXYS All rights reserved
60
70
80
90
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH36N55Q2
Fig. 8. Transconductance
50
50
45
45
40
40
35
35
TJ = -40ºC
30
25ºC
125ºC
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
30
25
20
TJ = 125ºC
15
25ºC
-40ºC
10
25
20
15
10
5
5
0
0
3
3.5
4
4.5
5
5.5
6
0
6.5
5
10
15
V G S - Volts
30
35
100
10
90
9
VDS = 275V
80
8
I D = 18A
70
7
I G = 10mA
60
50
40
TJ = 125ºC
45
50
55
6
5
4
3
20
2
TJ = 25ºC
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
V S D - Volts
1
1.1
1.2
0
10
20
30
40
50
60
70
80
90 100 110
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 150ºC
TC = 25ºC
R DS(on) Limit
C iss
1000
I D - Amperes
Capacitance - picoFarads
40
Fig. 10. Gate Charge
VG S - Volts
I S - Amperes
25
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
30
20
C oss
100
25µs
100µs
1ms
10
10ms
C rss
DC
100
1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFH36N55Q2
Fig. 13. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.1
1
10
100
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
1000
10000