IXYS IXFK30N100Q2

HiPerFETTM
Power MOSFETs
IXFK 30N100Q2
IXFX 30N100Q2
VDSS = 1000 V
=
30 A
ID25
RDS(on) = 0.40 Ω
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
trr ≤ 300 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
1000
1000
V
V
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
30
120
30
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
735
W
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
0.9/6 Nm/lb.in.
PLUS-247
TO-264
D (TAB)
D
TO-264 AA (IXFK)
G
°C
300
TO-264
G
°C
°C
°C
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
PLUS 247TM (IXFX)
6
10
G = Gate
S = Source
D
D (TAB)
S
D = Drain
TAB = Drain
g
g
Features
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
5.0
V
±200
nA
50
2
µA
mA
0.40
Ω
z
z
z
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99160(4/04)
IXFK 30N100Q2
IXFX 30N100Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 15 V; ID = 0.5 • ID25, pulse test
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
30
S
8200
pF
760
pF
140
pF
td(on)
22
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14
ns
td(off)
RG = 1.0 Ω (External),
60
ns
10
ns
186
nC
46
nC
82
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.17
TO-264
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
0.15
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
30
A
Repetitive; pulse width limited by TJM
120
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
1
10
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXFK 30N100Q2
IXFX 30N100Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
30
60
27
VGS = 10V
55
VGS = 10V
7V
6.5V
50
7V
24
45
I D - Amperes
I D - Amperes
21
6V
18
15
5.5V
12
9
6.5V
40
35
30
6V
25
20
15
6
5V
3
5.5V
10
5V
5
0
0
0
1
2
3
4
5
6
7
8
9
10
0
11 12
3
6
9
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
30
3.1
VGS = 10V
27
2.8
R D S ( o n ) - Normalized
7V
6V
24
I D - Amperes
15
V D S - Volts
V D S - Volts
21
18
5.5V
15
12
5V
9
6
VGS = 10V
2.5
2.2
1.9
I D = 30A
1.6
I D = 15A
1.3
1
0.7
3
4.5V
0
0
3
6
9
12
15
V D S - Volts
18
0.4
21
24
27
-50
Fig. 5. RDS(on) Norm alized to
2.6
-25
0
25
50
75
100
TJ - Degrees Centigrade
125
150
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
2.8
33
30
VGS = 10V
27
2.4
24
2.2
I D - Amperes
R D S ( o n ) - Normalized
12
TJ = 125ºC
2
1.8
1.6
1.4
21
18
15
12
9
TJ = 25ºC
1.2
6
1
3
0.8
0
0
5
10
15 20
25
30
35
I D - Amperes
© 2004 IXYS All rights reserved
40 45
50 55 60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFK 30N100Q2
IXFX 30N100Q2
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
60
40
55
35
50
25
20
15
TJ = 125ºC
35
30
25
20
15
25ºC
-40ºC
10
25ºC
125ºC
40
g f s - Siemens
I D - Amperes
TJ = -40ºC
45
30
10
5
5
0
0
3.5
4
4.5
5
5.5
6
6.5
0
5
10
15
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
80
9
VDS = 500V
8
I D = 15A
7
I G = 10mA
60
VG S - Volts
I S - Amperes
70
50
40
TJ = 125ºC
30
35
40
45
50
6
5
4
3
20
2
TJ = 25ºC
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
V S D - Volts
1
1.1
0
1.2
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
1.00
10000
1000
R( t h ) J C - ºC / W
C iss
f = 1MHz
Capacitance - picoFarads
25
Fig. 10. Gate Charge
90
30
20
I D - Amperes
C oss
0.10
C rss
100
0.01
0
5
10
15
20
25
30
35
1
40
V D S - Volts
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344