IXYS IXFT66N20Q

HiPerFETTM
Power MOSFETs
IXFH 66N20Q
IXFT 66N20Q
VDSS
ID25
RDS(on)
Q-Class
= 200 V
=
66 A
Ω
=
40 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
TC = 25°C
66
A
IDM
TC = 25°C, pulse width limited by TJM
264
A
IAR
TC = 25°C
66
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
W
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
6
4
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
400
-55 ... +150
150
-55 ... +150
200
2.0
TJ = 25°C
TJ = 125°C
V
4.0
V
±100
nA
25
1
µA
mA
40
mΩ
TO-268 (D3) (IXFT) Case Style
G
(TAB)
S
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
z
z
z
IXYS advanced low Qg process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99039(04/03)
IXFH 66N20Q
IXFT 66N20Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
30
45
S
3700
pF
860
pF
C rss
260
pF
td(on)
20
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
18
ns
td(off)
RG = 2.0 Ω (External)
50
ns
14
ns
105
nC
20
nC
44
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
K/W
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
0.6
7
66
A
264
A
1.5
V
200
ns
µC
A
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFH 66N20Q
IXFT 66N20Q
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
@ 25 deg. C
70
180
VG S = 10V
7V
VG S = 10V
8V
150
6V
50
I D - Amperes
I D - Amperes
60
40
30
5V
20
7V
120
90
6V
60
30
10
0
5V
0
0
0.5
1
1.5
2
V DS - Volts
2.5
3
3.5
0
3
Fig. 3. Output Characteristics
@ 125 Deg. C
12
15
Junction Temperature
2.8
VG S = 10V
7V
60
2.5
RD S (on) - Normalized
6V
50
40
5V
30
20
10
VG S = 10V
2.2
1.9
I D = 66A
1.6
1.3
I D = 33A
1
0.7
0.4
0
0
1
2
3
4
5
6
-50
7
-25
V DS - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D25
Fig. 6. Drain Current vs. Case
Temperature
Value vs. ID
3.5
70
VG S = 10V
3
60
2.5
I D - Amperes
RD S (on) - Normalized
9
Fig. 4. RDS(on) Normalized to ID25 Value vs.
70
I D - Amperes
6
V D S - Volts
T J = 125º C
2
1.5
T J = 25º C
1
50
40
30
20
10
0
0.5
0
33
66
99
I D - Amperes
© 2003 IXYS All rights reserved
132
165
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 66N20Q
IXFT 66N20Q
Fig. 8. Transconductance
Fig. 7. Input Admittance
90
165
T J = -40º C
80
25º C
70
g f s - Siemens
I D - Amperes
132
99
66
T J = -40º C
25º C
33
125º C
60
50
40
30
20
125º C
10
0
0
3
3.5
4
4.5
5
5.5
6
6.5
0
7
33
66
Fig. 9. Source Current vs. Source-To-Drain
132
165
Fig. 10. Gate Charge
Voltage
198
10
165
VD S = 100V
I D = 33A
I G = 10mA
8
132
VG S - Volts
I S - Amperes
99
I D - Amperes
V G S - Volts
99
T J = 125º C
66
T J = 25º C
6
4
2
33
0
0
0.4
0.6
0.8
1
1.2
0
1.4
20
40
60
80
100
120
QG - nanoCoulombs
V SD - Volts
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
1
10000
C iss
R (th) J C - (ºC/W)
Capacitance - p F
f = 1M Hz
1000
C oss
0.1
C rss
100
0.01
0
5
10
15
20
25
V DS - Volts
30
35
40
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343