IXFR40N50Q2 HiPerFETTM Power MOSFETs VDSS = 500 V = 29 A ID25 RDS(on) = 0.17 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 29 160 40 A A A G EAR EAS TC = 25°C TC = 25°C 50 2.5 mJ J G = Gate S = Source dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns Features PD TC = 25°C 320 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s FC Mounting force 22...130/5...30 Weight 5 N/lb. g z z z z z z z z z Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved 500 2.5 TJ = 25°C TJ = 125°C z D = Drain TAB = Isolated Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages V z 5.0 V z ±200 nA 25 1 µA mA 0.17 S Applications z Symbol (TAB) D z Easy to mount Space savings High power density Ω DS99075B(05/04) IXFR40N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT, pulse test 15 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 28 S 4200 pF 680 pF 170 pF 17 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 13 ns td(off) RG = 2 Ω (External), 42 ns 8 ns 110 nC 25 nC 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.39 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM ISOPLUS247 Outline K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 A Repetitive; pulse width limited by TJM 160 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A 1 9 IF = 25A -di/dt = 100 A/µs, VR = 100 V TO-264 AA Outline Note: Test current IT = 20A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFR40N50Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25º C 40 90 VGS = 10V 35 8V 70 6V 25 20 I D - Amperes I D - Amperes 30 VGS = 10V 80 8V 7V 5.5V 15 5V 10 60 7V 50 40 6V 30 20 4.5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 3.1 VGS = 10V 2.8 8V 7V 30 6V R D S ( o n ) - Normalized 35 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 40 5.5V 25 20 5V 15 10 4.5V 5 VGS = 10V 2.5 2.2 1.9 I D = 40A 1.6 I D = 20A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 V D S - Volts 14 16 -50 0.5 ID25 Value vs. ID 3.1 2.8 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 45 40 VGS = 10V TJ = 125ºC 2.5 35 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 2.2 1.9 1.6 1.3 TJ = 25ºC 30 25 20 15 10 1 5 0.7 0 0 10 20 30 40 50 60 I D - Amperes © 2004 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR40N50Q2 Fig. 8. Transconductance 50 45 45 40 40 TJ = -40ºC 35 35 25ºC 125ºC g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 50 30 25 20 TJ = 125ºC 15 30 25 20 15 25ºC -40ºC 10 10 5 5 0 0 3 3.5 4 4.5 5 5.5 6 0 6.5 5 10 15 20 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 10 110 9 VDS = 250V 8 I D = 20A 7 I G = 10mA 100 90 80 VG S - Volts I S - Amperes 30 35 70 45 50 55 60 50 TJ = 125ºC 6 5 4 3 30 2 TJ = 25ºC 20 1 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ar d-Bias Safe Ope rating Are a Fig. 11. Capacitance 1000 10000 TJ = 150ºC f = 1MHz TC = 25ºC R DS(on) Lim it C iss I D - Amperes Capacitance - picoFarads 40 Fig. 10. Gate Charge 120 40 25 I D - Amperes 1000 C oss 100 25µs 100µs 1m s 10 10m s DC C rss 1 100 0 5 10 15 20 25 V D S - Volts 30 35 10 40 100 1000 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFR40N50Q2 F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 Pu ls e W id th - millis e c o n d s © 2004 IXYS All rights reserved 1000 10000