HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS(on) 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 42 50 58 168 200 232 42 50 58 A A A A A A A A A 30 mJ 5 V/ns 300 W EAR TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-268 (D3) Case Style G TJM Symbol (TAB) Maximum Ratings V 4 V ±100 nA 200 1 mA mA S TO-204 AE (IXFM) (TAB) S D G = Gate, S = Source, G D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • High power surface mountable package • High power density 91522H (2/98) 1-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Characteristic Values Typ. Max. 0.060 W 0.045 W 0.040 W RDS(on) 42N20 50N20 58N20 Pulse test, t £ 300 ms, duty cycle d £ 2 % gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 R G = 1 W (External) 18 15 72 16 25 20 90 25 ns ns ns ns VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 190 35 95 220 50 110 (TO-247 and TO-204 Case styles) 0.25 Qg(on) Qgs Qgd RthJC RthCK VGS = 10 V, ID = 0.5 ID25 Source-Drain Diode 20 32 S 4400 800 285 pF pF pF 0.780 0.800 0.819 0.845 nC nC nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 0.42 K/W K/W G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IS VGS = 0 V 42N20 50N20 58N20 42 50 58 A A A ISM Repetitive; pulse width limited by TJM 42N20 50N20 58N20 168 200 232 A A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 300 ns ns QRM IRM TO-268AA (D3 PAK) TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 1.5 2.6 mC mC TJ = 25°C TJ = 125°C 19 23 A A Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. 19.81 20.32 20.80 21.46 Test Conditions IF = 25A, -di/dt = 100 A/ms, VR = 100 V Dim. Millimeter Min. Max. A B Symbol t rr TO-247 AD (IXFH) Outline Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Fig. 1 Output Characteristics 100 Fig. 2 Input Admittance 90 9V 8V 7V 70 80 ID - Amperes 80 ID - Amperes 100 VGS = 10V TJ = 25°C 90 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 6V 60 50 40 30 5V 20 70 TJ = 25°C 60 50 40 30 20 10 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 VDS - Volts 4 5 6 7 8 9 10 VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.6 2.25 RDS(on) - Normalized RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 VGS = 10V 1.2 VGS = 15V 1.0 25 50 75 100 125 1.75 ID = 25A 1.50 1.25 1.00 0.75 0.8 0 2.00 150 0.50 -50 175 -25 0 ID - Amperes 1.2 70 1.1 BV/VG(th) - Normalized ID - Amperes VGS(th) 58N20 50N20 42N20 40 30 20 100 125 150 BVDSS 1.0 0.9 0.8 0.7 0.6 10 0 -50 75 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 50 50 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 60 25 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH/IXFM42N20 IXFH/IXFM50N20 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 14 VDS = 100V ID = 50A 10 ID - Amperes VGE - Volts 10µs 100 Limited by R DS(on) 12 I = 10mA G 8 6 100µs 1ms 10 10ms 4 100ms 2 0 1 0 25 50 75 100 125 150 175 200 1 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 50 40 3500 f = 1MHz VDS = 25V 3000 ID - Amperes Capacitance - pF Fig.10 Source Current vs. Source to Drain Voltage Ciss 4000 100 200 10 2500 2000 1500 Coss 1000 0 0 5 10 20 TJ = 25°C 10 Crss 500 TJ = 125°C 30 15 20 0 0.4 25 0.6 VDS - Volts 0.8 1.0 1.2 1.4 VSD - Volts Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4