Low VCE(sat) IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13/10 Nm/lb.in. 6 g 300 °C TJ Md Mounting torque (M3) Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions BVCES IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 3 mA, VGE = 0 V 1000 BVCES temperature coefficient VGE(th) 0.072 IC = 500 mA, VGE = VGE 2.5 VGE(th) temperature coefficient ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V 5.5 -0.192 TJ = 25°C TJ = 125°C 12N100 12N100A IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved %/K V %/K 250 1 mA mA ±100 nA 3.5 4.0 V V IC25 VCE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247AD G C (TAB) C G = Gate E = Emitter E C = Collector TAB = Collector Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125°C) Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • High power density 95590B(7/00) 1-2 IXGH12N100 IXGH12N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Cies 10 S 750 pF 80 pF Cres 30 pF Qg 65 90 nC 8 20 nC 24 45 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 6 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 100 ns t ri IC = IC90, VGE = 15 V, L = 300 mH, VCE =. 0.8 VCES, RG = Roff = 120 W 200 ns td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 850 1000 ns 12N100 800 1000 ns 12N100A 500 700 ns 12N100 2.5 12N100A 1.5 mJ 3.0 mJ TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(on) 100 ns t ri 200 ns J K 1.1 mJ L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 900 ns N 1.5 2.49 0.087 0.102 1250 ns Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 VCES, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC RthCK 12N100 12N100A 950 ns 12N100 3.5 mJ 12N100A 2.2 mJ 0.25 1.25 K/W K/W IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1 data sheet. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2