IXYS IXTQ44N50P

PolarHVTM
Power MOSFET
IXTQ 44N50P
VDSS
ID25
RDS(on)
= 500 V
= 44 A
≤ 140 mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
44
110
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
44
55
1.7
A
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 10 Ω
10
V/ns
PD
TC = 25° C
650
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque(TO-247)
TO-3P (IXTQ)
G
6
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
l
1.13/10 Nm/lb.in.
Weight
D
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
g
Advantages
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250µA
500
VGS(th)
VDS = VGS, ID = 250µA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
l
l
Easy to mount
Space savings
High power density
V
5.0
V
±10
nA
25
250
µA
µA
140 mΩ
DS99372E(03/06)
IXTQ 44N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
20
32
S
5440
pF
639
pF
Crss
40
pF
td(on)
25
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
27
ns
td(off)
RG = 3 Ω (External)
75
ns
tf
21
ns
Qg(on)
98
nC
35
nC
30
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.19° C/W
RthJC
RthCS
TO-3P (IXTQ) Outline
(TO-3P)
Source-Drain Diode
° C/W
0.21
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
44
A
ISM
Repetitive
110
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 22 A
-di/dt = 100 A/µs
400
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTQ 44N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
45
100
V GS = 10V
7V
40
80
35
70
30
25
I D - Amperes
I D - Amperes
V GS = 10V
8V
90
6V
20
15
7V
60
50
40
6V
30
10
20
5V
5
10
0
5V
0
0
1
2
3
4
5
6
7
0
3
6
9
12
15
18
21
24
27
30
V DS - Volts
V DS - Volts
Fig. 4. R DS(on) Normalized to ID = 22A Value
v s. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.2
45
V GS = 10V
7V
40
V GS = 10V
2.8
R DS(on) - Normalized
I D - Amperes
35
6V
30
25
20
15
5V
2.4
2
I D = 44A
I D = 22A
1.6
1.2
10
0.8
5
0
0.4
0
2
4
6
8
10
12
14
-50
16
-25
V DS - Volts
50
75
100
125
150
Fig. 6. Maximum Drain Current v s.
Case Temperature
3.2
50
V GS = 10V
45
2.8
TJ = 125ºC
2.6
40
2.4
35
I D - Amperes
R DS(on) - Normalized
25
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 22A Value
vs. Drain Current
3.0
0
2.2
2.0
1.8
1.6
30
25
20
15
1.4
TJ = 25ºC
1.2
10
5
1.0
0
0.8
0
10
20
30
40
50
I D - Amperes
© 2006 IXYS All rights reserved
60
70
80
90
100
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXTQ 44N50P
Fig. 8. Transconductance
Fig. 7. Input Admittance
65
60
60
55
55
50
50
45
g f s - Siemens
I D - Amperes
45
40
35
30
TJ = 125ºC
25ºC
- 40ºC
25
20
35
30
25
20
15
15
10
10
5
5
0
TJ = - 40ºC
25ºC
125ºC
40
0
3.5
4
4.5
5
5.5
6
0
6.5
10
20
V GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
40
50
60
70
Fig. 10. Gate Charge
10
140
V DS = 250V
9
120
I D = 22A
8
100
I G = 10mA
7
V GS - Volts
I S - Amperes
30
I D - Amperes
80
TJ = 125ºC
60
TJ = 25ºC
40
6
5
4
3
2
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10
20
V SD - Volts
30
40
50
60
70
80
90
100
Q G - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
10,000
TJ = 150ºC
TC = 25ºC
Capacitance - PicoFarads
C iss
RDS(on) Limit
I D - Amperes
1,000
C oss
100
25µs
100µs
10
100
1ms
DC
10ms
C rss
f = 1 MHz
1
10
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
IXTQ 44N50P
Fig. 13. Maximum Transient Thermal Resistance
R (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_44N50P (8J) 03-21-06-B.xls