IXTA 86N20T IXTP 86N20T IXTQ 86N20T Trench Gate Power MOSFET VDSS ID25 = 200 V = 86 A Ω ≤ 29 mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V ± 30 V 86 75 260 A A A 10 1.0 A J 3 V/ns 480 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C VGSM ID25 IL IDM TC = 25°C* Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM IAS EAS TC = TC = dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 3.3 Ω PD TC = 25°C 25°C 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md FC Mounting Mounting Torque Force TO-263 TO-220 TO-3P Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) G (TO-220, TO-3P) 1.13 / 10 Nm/ lb.in. (TO-263) 10...65/2..5..15 N/lb. Weight 2 3 5.5 g g g Characteristic Values Min. Typ. Max. 200 3.0 TJ = 125°C VGS = 10 V, ID = 0.5 ID25, Note 1 TO-263 (IXTA) V 5.0 V ± 200 nA 1 250 μA μA 29 mΩ S (TAB) TO-220 (IXTP) G (TAB) D S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99664(08/06) © 2006 IXYS All rights reserved IXTA 86N20T Symbol Test Conditions gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 46 Ciss Coss 78 S 4500 pF VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr td(off) VGS = 15 V, VDS = 0.5 VDSS, ID = 43 A RG = 3.3 Ω (External) tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS , ID = 25 A Qgs IXTP 86N20T IXTQ 86N20T Qgd 550 pF 73 pF 22 24 52 ns ns ns 29 ns 90 nC 30 nC 23 nC 0.31 °C/W RthJC TO-220 TO-3P RthCS 0.50 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Note 1 t rr IF =25A, -di/dt = 100 A/μs VR = 100V, VGS = 0 V °C/W °C /W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 86 A 260 A 1.5 V 140 ns Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; *: Current may be limited by externalterminal currnet limit. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA 86N20T Fig. 1. Output Characteristics @ 25ºC IXTP 86N20T IXTQ 86N20T Fig. 2. Extended Output Characteristics @ 25ºC 90 220 V GS = 10V 8V 7V 80 V GS = 10V 8V 200 180 70 50 I D - Amperes I D - Amperes 160 60 6V 40 30 7V 140 120 100 6V 80 60 20 40 5V 10 5V 20 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 2 4 6 10 12 14 16 18 20 Fig. 4. R DS(on) Normalized to ID = 43A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 90 3.0 V GS = 10V 8V 7V 80 2.8 V GS = 10V 2.6 70 2.4 R DS(on) - Normalized I D - Amperes 8 V DS - Volts V DS - Volts 60 6V 50 40 30 20 2.2 2.0 1.8 I D = 86A 1.6 1.4 I D = 43A 1.2 1.0 5V 0.8 10 0.6 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -50 -25 25 50 75 100 125 150 T J - Degrees Centigrade V DS - Volts Fig. 5. R DS(on) Normalized to ID = 43A Value v s. Drain Current Fig. 6. Drain Current v s. Case Temperature 3.6 90 3.4 V GS = 10V External Lead Current Limit 80 TJ = 125ºC 3.2 3 70 2.8 2.6 I D - Amperes R DS(on) - Normalized 0 2.4 2.2 2 1.8 60 50 40 30 1.6 1.4 20 TJ = 25ºC 1.2 10 1 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2006 IXYS All rights reserved 140 160 180 200 220 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXTA 86N20T IXTP 86N20T IXTQ 86N20T Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 110 TJ = - 40ºC 140 100 90 g f s - Siemens I D - Amperes 120 100 80 TJ = -40ºC 25ºC 125ºC 60 40 25ºC 80 70 125ºC 60 50 40 30 20 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 V GS - Volts 60 80 100 120 140 160 180 200 70 80 90 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 240 V DS = 100V 9 210 I D = 25A 8 I G = 10mA 180 150 V GS - Volts I S - Amperes 7 120 90 TJ = 125ºC 6 5 4 3 60 TJ = 25ºC 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 V SD - Volts 40 50 60 Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1.00 10,000 C iss 1,000 R (th)JC - ºC / W Capacitance - PicoFarads 30 Q G - NanoCoulombs C oss 100 0.10 C rss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10 IXTA 86N20T Fig. 13. Resistiv e Turn-on Rise Time v s. Junction Temperature Fig. 14. Resistive Turn-on Rise Time v s. Drain Current 26 27 RG = 3.3Ω 24 20 18 I D = 86A 16 I D = 43A 14 TJ = 25ºC 23 V DS = 100V t r - Nanoseconds t r - Nanoseconds 25 V GS = 15V 22 21 RG = 3.3Ω 19 V GS = 15V V DS = 100V 17 15 13 12 TJ = 125ºC 11 10 9 25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 45 T J - Degrees Centigrade TJ = 125ºC, V GS = 15V 23 20 t f - Nanoseconds I D = 43A 16 12 18 3 85 66 30 64 28 62 26 60 I D = 43A 24 58 22 56 I D = 86A 20 54 18 tf td(off) - - - - 52 16 RG = 3.3Ω , V GS = 15V 50 4 5 6 7 8 9 10 11 12 13 14 14 25 15 35 45 R G - Ohms 90 34 TJ = 25ºC 30 68 70 66 65 tf 64 60 TJ = 125ºC, V GS = 15V 95 105 115 48 125 54 160 150 I D = 43A, 86A V DS = 100V 55 t f - Nanoseconds 56 170 td(off) - - - - 140 50 130 45 120 40 110 35 100 30 90 25 80 18 52 16 50 20 70 14 48 15 60 46 10 TJ = 25ºC 12 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 I D - Amperes - Nanoseconds V DS = 100V TJ = 125ºC 85 d(off) RG = 3.3Ω , V GS = 15V 58 - Nanoseconds td(off) - - - - d(off) 60 22 75 t t 26 tf 65 Fig. 18. Resistiv e Turn-off Switching Times v s. Gate Resistance 62 TJ = 125ºC 24 55 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times v s. Drain Current t f - Nanoseconds 80 V DS = 100V 10 20 75 32 19 14 28 70 - Nanoseconds I D = 86A - Nanoseconds 21 22 18 65 d(off) 24 d(on) 22 20 60 t t V DS = 100V 26 t r - Nanoseconds td(on) - - - - tr 28 55 Fig. 16. Resistiv e Turn-off Switching Times v s. Junction Temperature 32 30 50 I D - Amperes Fig. 15. Resistiv e Turn-on Switching Times v s. Gate Resistance 32 IXTP 86N20T IXTQ 86N20T 50 3 4 5 6 7 8 9 10 11 12 13 14 15 R G - Ohms IXYS REF: T_86N20T (6E) 6-30-06 © 2006 IXYS All rights reserved IXTA 86N20T TO-3P (IXTQ) Outline TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXTP 86N20T IXTQ 86N20T