Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T N-Channel Enhancement Mode Avalanche Rated = = 150V 90A Ω 20mΩ RDS(on) ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ VGSM G 150 150 V V ± 30 V ID25 ILRMS IDM TC = 25°C * Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 90 75 250 A A A IA EAS TC = TC = 4 750 A μJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 455 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C Torque(TO-220,TO-3P,TO-247) 1.13/10 Force (TO-263) 10..65/2.2..14.6 Nm/lb.in. N/lb. 25°C 25°C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md FC Mounting Mounting Weight TO-263 TO-220 TO-3P TO-247 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 2.5 3 5.5 6 Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) g g g g 4.5 VGS = 10V, ID = 0.5 • ID25, Note 1 © 2007 IXYS CORPORATION, All rights reserved 17 (TAB) TO-247 (IXTH) (TAB) TO-220 (IXTP) G D S (TAB) TO-3P (IXTQ) G D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect V Applications V z ± 200 nA TJ = 150°C S z z 5 μA 250 μA z 20 mΩ z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies DS99857(08/07) IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 40 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 69 S 4100 pF 560 pF 92 pF td(on) tr Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 22 ns ns td(off) RG = 3.3Ω (External) 44 ns tf 19 ns Qg(on) 80 nC 20 nC 20 nC Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd 0.33 °C/W RthJC RthCH TO-220 TO-3P, TO-263, TO-247 °C/W °C/W 0.25 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 90 A Repetitive 300 A VSD IF = 50A, VGS = 0V, Note 1 1.2 V trr IF =45A, -di/dt = 250A/μs VR = 75V, VGS = 0V 110 ns Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. *: Current may be limited by external terminal current limit. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T TO-263 (IXTA) Outline TO-247 (IXTH) Outline 1 2 3 ∅P Terminals: 1 - Gate 2 - Drain 3 - Source Dim. TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain 3 - Source © 2007 IXYS CORPORATION, All rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-3P (IXTQ) Outline IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 240 VGS = 10V 9V 8V 7V 80 70 200 180 ID - Amperes 60 ID - Amperes VGS = 10V 9V 8V 220 50 6V 40 30 160 7V 140 120 100 80 6V 60 20 40 10 5V 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 4 6 10 12 14 16 18 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 90 3.0 V GS = 10V 8V 7V 80 2.8 VGS = 10V 2.6 70 2.4 RDS(on) - Normalized ID - Amperes 8 VDS - Volts VDS - Volts 60 6V 50 40 5V 30 2.2 I D = 90A 2.0 1.8 I D = 45A 1.6 1.4 1.2 1.0 20 0.8 10 0.6 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 4.5 90 V GS = 10V 15V - - - - 4 External Lead Current Limit 80 TJ = 175ºC 70 3.5 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 3 2.5 2 60 50 40 30 1.5 20 TJ = 25ºC 1 10 0 0.5 0 40 80 120 160 200 240 I D - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Fig. 8. Transconductance Fig. 7. Input Admittance 110 100 100 90 90 80 TJ = - 40ºC 70 g f s - Siemens ID - Amperes 80 70 60 50 TJ = 150ºC 25ºC - 40ºC 40 25ºC 60 50 150ºC 40 30 30 20 20 10 10 0 0 3 3.5 4 4.5 5 5.5 0 6 10 20 30 VGS - Volts 50 60 70 80 90 100 110 120 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 280 9 VDS = 75V 240 I D = 25A 8 I G = 10mA 200 7 VGS - Volts IS - Amperes 40 160 120 5 4 3 TJ = 150ºC 80 6 2 40 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 100 0.10 C rss 10 0 5 10 15 20 25 VDS - Volts © 2007 IXYS CORPORATION, All rights reserved 30 35 40 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 31 RG = 3.3Ω 30 28 VGS = 10V 27 VDS = 75V 26 t r - Nanoseconds t r - Nanoseconds RG = 3.3Ω 29 VGS = 10V 24 22 20 I D = 90A 18 TJ = 25ºC VDS = 75V 25 23 21 19 17 16 TJ = 125ºC I D = 45A 15 14 12 13 25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 TJ - Degrees Centigrade 33 70 75 80 22 29 28 I D = 90A 27 I D = 45A 30 26 20 25 10 24 60 RG = 3.3Ω, VGS = 10V VDS = 75V t f - Nanoseconds 60 21 55 20 50 I D = 45A 19 45 I D = 90A 18 40 17 0 23 4 6 8 10 12 14 35 16 16 25 35 45 RG - Ohms 60 75 85 95 105 115 30 125 90 td(off) - - - - 110 TJ = 25ºC 18 40 TJ = 125ºC 17 60 80 I D = 45A, 90A 50 70 40 60 30 50 20 40 10 30 t d ( o f f ) - Nanoseconds 45 - Nanoseconds TJ = 25ºC 19 d( of f ) 50 90 V DS = 75V t 20 100 TJ = 125ºC, VGS = 10V 70 VDS = 75V td(off) - - - - tf 80 55 RG = 3.3Ω, VGS = 10V t f - Nanoseconds tf t f - Nanoseconds 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 22 TJ = 125ºC 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 21 90 t d ( o f f ) - Nanoseconds 30 2 85 65 31 VDS = 75V 40 65 td(off) - - - - tf 32 70 50 60 23 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, V GS = 10V 80 55 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 90 50 I D - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 45 35 16 30 20 30 40 50 60 70 80 90 I D - Amperes 0 20 2 4 6 8 10 12 14 16 RG - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_90N15T(5G)8-08-07-A