Preliminary Technical Information IXTH260N055T2 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient ± 20 V ID25 TC = 25°C 260 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, pulse width limited by TJM 780 A IA TC = 25°C 100 A EAS TC = 25°C 600 mJ PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight G BVDSS VGS = 0V, ID = 250μA 55 VGS(th) VDS = VGS, ID = 250μA 2.0 z z z z z IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved V ±200 nA 5 μA 150 μA International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advantages z Easy to mount Space savings High power density Applications z V 4.0 D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. (TAB) S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C unless otherwise specified) D z z z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 3.3 mΩ DS100078(11/08) IXTH260N055T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-247 (IXTH) Outline 94 S 10.8 nF 1460 pF 215 pF 20 ns 27 ns 36 ns 24 ns 140 nC 52 nC 32 nC 0.31 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 130A, VGS = 0V 60 ns IRM -di/dt = 100A/μs VR = 27V 3.4 A 102 nC QRM 260 A 1000 A 1.3 V 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH260N055T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 260 350 VGS = 15V 10V 9V 8V 240 220 200 300 8V 250 180 160 140 ID - Amperes ID - Amperes VGS = 15V 10V 9V 7V 120 100 80 40 150 6V 50 5V 20 7V 100 6V 60 200 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.4 0.8 1.2 Fig. 3. Output Characteristics @ 150ºC ID - Amperes 3.2 3.6 1.8 180 7V 160 140 120 100 6V 80 60 40 I D = 260A 1.6 I D = 130A 1.4 1.2 1.0 0.8 5V 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.2 2.1 160 TJ = 175ºC 2.0 External Lead Current Limit 140 1.9 1.8 120 1.7 ID - Amperes RDS(on) - Normalized 2.8 VGS = 10V 2.0 RDS(on) - Normalized 200 2.4 2.2 VGS = 15V 10V 9V 8V 220 2.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature 260 240 1.6 VDS - Volts VDS - Volts VGS = 10V 1.6 15V - - - - 1.5 1.4 1.3 100 80 60 1.2 TJ = 25ºC 1.1 40 1.0 20 0.9 0 0.8 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTH260N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 180 TJ = - 40ºC 120 25ºC 160 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 25ºC - 40ºC 80 60 150ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 200 220 10 VDS = 28V 9 320 I D = 130A 8 280 I G = 10mA 7 240 VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge 360 200 160 TJ = 150ºC 120 6 5 4 3 TJ = 25ºC 80 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 100 110 120 130 140 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 I D - Amperes Capacitance - PicoFarads 100 ID - Amperes Coss 1,000 100µs 100 External Lead Current Limit 1ms 10 TJ = 175ºC Crss 10ms 100ms TC = 25ºC Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_260N055T2(V6)12-15-08-B IXTH260N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 32 40 38 RG = 2Ω 36 32 30 I D = 200A 26 24 I D VDS = 28V 30 28 22 VGS = 10V TJ = 125ºC VDS = 28V t r - Nanoseconds t r - Nanoseconds 34 RG = 2Ω 31 VGS = 10V = 100A 20 29 28 27 26 18 16 TJ = 25ºC 25 14 12 24 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 160 TJ = 125ºC, VGS = 10V 90 55 80 50 80 50 60 40 40 30 20 0 2 4 6 8 10 tf 12 14 45 td(off) - - - - 40 45 I D = 200A, 100A 35 td(off) - - - - RG = 2Ω, VGS = 10V 35 25 30 20 20 25 10 15 16 25 35 45 250 tf 225 TJ = 125ºC, VGS = 10V 45 24 40 TJ = 25ºC 20 35 85 95 105 115 20 125 160 I D = 100A, 200A 140 100 100 75 80 50 60 40 25 20 200 0 © 2008 IXYS CORPORATION, All rights reserved 180 120 8 ID - Amperes 200 125 25 180 220 VDS = 28V 150 12 160 td(off) - - - - 175 30 140 240 200 16 120 75 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds t f - Nanoseconds 275 60 t d(off) - Nanoseconds 28 100 65 65 50 TJ = 125ºC 80 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 55 VDS = 28V 60 40 30 t f - Nanoseconds tf 40 50 TJ - Degrees Centigrade 44 32 55 VDS = 28V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 36 200 60 RG - Ohms 40 180 t d(off) - Nanoseconds 60 t d(on) - Nanoseconds 70 I D = 200A, 100A 100 160 RG = 2Ω, VGS = 10V VDS = 28V 120 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 140 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXTH260N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_260N055T2(V6)12-15-08-B