Preliminary Technical Information IXTA220N055T7 TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 55 55 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM 220 120 600 A A A IAR EAS TC = 25° C TC = 25° C 25 1.0 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 3 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Weight Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Note 1 V TJ = 150° C 3.1 4.0 V ± 200 nA 5 250 µA µA 4.0 mΩ TO-263 (7-lead) (IXTA..7) 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99683 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTA220N055T7 Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 75 120 S 7200 pF 1270 pF 285 pF Ciss Coss TO-263 (7-lead) (IXTA...7) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz C rss Max. td(on) Resistive Switching Times 36 ns tr VGS = 10 V, VDS = 30 V, ID = 25 A 62 ns td(off) RG = 5 Ω (External) 53 ns 53 ns 158 nC 42 nC 46 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.35 ° C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V 220 A ISM Pulse width limited by TJM 600 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -dI/dt = 100 A/µs VR = 25 V, VGS = 0 V 70 ns Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,931,844 4,850,072 5,017,508 4,881,106 5,049,961 5,063,307 5,034,796 5,237,481 5,381,025 5,187,117 6,162,665 6,259,123B1 5,486,715 6,404,065B1 6,534,343 6,306,728B1 6,683,344 6,710,405B2 6,583,505 6,727,585 6,759,692 6,710,463 7,005,734B2 7,063,975B2 6,771,478B2 7,063,975B2 7,071,537 7,071,537 IXTA220N055T7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 220 320 VGS = 10V 9V 8V 200 180 240 160 140 7V ID - Amperes ID - Amperes VGS = 10V 9V 8V 280 120 6V 100 80 60 200 7V 160 6V 120 80 40 40 20 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2.5 3 3.5 4 4.5 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 2.2 VGS = 10V 9V 8V 7V 160 140 120 100 6V 80 5V 60 VGS = 10V 2.0 RDS(on) - Normalized 180 ID - Amperes 2 VDS - Volts VDS - Volts 1.8 1.6 I D = 220A 1.4 I D = 110A 1.2 1.0 40 0.8 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.2 140 External Lead Current Limit for TO-263 (7-Lead) TJ = 175ºC 2 120 1.8 100 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.6 VGS = 10V 15V - - - - 1.4 1.2 External Lead Current Limit for TO-3P, TO-220, & TO-263 80 60 40 TJ = 25ºC 20 1 0 0.8 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA220N055T7 Fig. 8. Transconductance 180 240 160 210 140 180 120 TJ = - 40ºC g f s - Siemens ID - Amperes Fig. 7. Input Admittance 270 150 120 25ºC 100 80 150ºC 60 90 TJ = 150ºC 25ºC -40ºC 60 40 20 30 0 0 3.5 4 4.5 5 5.5 6 0 6.5 30 60 VGS - Volts 150 180 210 240 270 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VGS - Volts IS - Amperes 120 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 90 TJ = 150ºC 120 TJ = 25ºC 90 VDS = 27.5V I D = 25A I G = 10mA 6 5 4 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads C iss C oss C rss f = 1 MHz 100 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA 220N055T7 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 75 70 RG = 5Ω 65 VGS = 10V 70 65 VDS = 30V 60 t r - Nanoseconds t r - Nanoseconds 75 55 50 45 I D = 50A 40 35 TJ = 25ºC 60 RG = 5Ω 55 VGS = 10V 50 VDS = 30V 45 40 I D = 25A 30 35 25 30 20 TJ = 125ºC 25 25 35 45 55 65 75 85 95 105 115 125 25 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 65 100 50 I D = 50A, 25A 80 45 60 40 t f - Nanoseconds 55 86 61 82 59 78 57 74 55 70 53 51 62 35 20 6 8 10 12 14 16 18 25 35 45 RG - Ohms 64 84 62 VDS = 30V 68 54 64 52 60 50 56 52 TJ = 25ºC 46 48 36 115 50 125 40 44 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 48 230 TJ = 125ºC, VGS = 10V VDS = 30V 150 t f - Nanoseconds t f - Nanoseconds 72 RG = 5Ω, VGS = 10V 32 105 td(off) - - - - tf 170 t d ( o f f ) - Nanoseconds td(off) - - - - 28 95 260 76 24 85 200 I D = 25A 130 170 110 140 I D = 50A 90 110 70 80 50 t d ( o f f ) - Nanoseconds 60 48 75 190 80 56 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance TJ = 125ºC 58 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 54 VDS = 30V 45 20 58 RG = 5Ω, VGS = 10V 47 30 4 td(off) - - - - tf 49 40 66 I D = 50A, 25A t d ( o f f ) - Nanoseconds VDS = 30V 90 I D = 25A, 50A 63 60 TJ = 125ºC, VGS = 10V 120 50 65 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 160 140 40 I D - Amperes 50 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_220N055T (5V) 6-16-06.xls