IXTA220N055T7 - IXYS Corporation

Preliminary Technical Information
IXTA220N055T7
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
= 55
V
= 220
A
≤ 4.0 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
VGSM
55
55
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25° C
Package Current Limit, RMS
TC = 25° C, pulse width limited by TJM
220
120
600
A
A
A
IAR
EAS
TC = 25° C
TC = 25° C
25
1.0
A
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
PD
TC = 25° C
430
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
3
g
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Weight
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
55
VGS(th)
VDS = VGS, ID = 250 µA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
V
TJ = 150° C
3.1
4.0
V
± 200
nA
5
250
µA
µA
4.0
mΩ
TO-263 (7-lead) (IXTA..7)
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99683 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA220N055T7
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
75
120
S
7200
pF
1270
pF
285
pF
Ciss
Coss
TO-263 (7-lead) (IXTA...7) Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
Max.
td(on)
Resistive Switching Times
36
ns
tr
VGS = 10 V, VDS = 30 V, ID = 25 A
62
ns
td(off)
RG = 5 Ω (External)
53
ns
53
ns
158
nC
42
nC
46
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
0.35 ° C/W
RthJC
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0 V
220
A
ISM
Pulse width limited by TJM
600
A
VSD
IF = 25 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 25 A, -dI/dt = 100 A/µs
VR = 25 V, VGS = 0 V
70
ns
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,931,844
4,850,072
5,017,508
4,881,106
5,049,961
5,063,307
5,034,796
5,237,481
5,381,025
5,187,117
6,162,665
6,259,123B1
5,486,715
6,404,065B1
6,534,343
6,306,728B1
6,683,344
6,710,405B2
6,583,505
6,727,585
6,759,692
6,710,463
7,005,734B2
7,063,975B2
6,771,478B2
7,063,975B2
7,071,537
7,071,537
IXTA220N055T7
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
220
320
VGS = 10V
9V
8V
200
180
240
160
140
7V
ID - Amperes
ID - Amperes
VGS = 10V
9V
8V
280
120
6V
100
80
60
200
7V
160
6V
120
80
40
40
20
5V
5V
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.5
1
1.5
2.5
3
3.5
4
4.5
Fig. 4. RDS(on) Normalized to ID = 110A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
2.2
VGS = 10V
9V
8V
7V
160
140
120
100
6V
80
5V
60
VGS = 10V
2.0
RDS(on) - Normalized
180
ID - Amperes
2
VDS - Volts
VDS - Volts
1.8
1.6
I D = 220A
1.4
I D = 110A
1.2
1.0
40
0.8
20
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
50
75
100
125
150
175
Fig. 6. Drain Current vs. Case Temperature
2.2
140
External Lead Current Limit for TO-263 (7-Lead)
TJ = 175ºC
2
120
1.8
100
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
VDS - Volts
1.6
VGS = 10V
15V - - - -
1.4
1.2
External Lead Current Limit for TO-3P, TO-220, & TO-263
80
60
40
TJ = 25ºC
20
1
0
0.8
0
40
80
120
160
200
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
240
280
320
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTA220N055T7
Fig. 8. Transconductance
180
240
160
210
140
180
120
TJ = - 40ºC
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
270
150
120
25ºC
100
80
150ºC
60
90
TJ = 150ºC
25ºC
-40ºC
60
40
20
30
0
0
3.5
4
4.5
5
5.5
6
0
6.5
30
60
VGS - Volts
150
180
210
240
270
Fig. 10. Gate Charge
300
10
270
9
240
8
210
7
VGS - Volts
IS - Amperes
120
I D - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
180
150
90
TJ = 150ºC
120
TJ = 25ºC
90
VDS = 27.5V
I D = 25A
I G = 10mA
6
5
4
3
60
2
30
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
C iss
C oss
C rss
f = 1 MHz
100
0
5
0.10
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTA 220N055T7
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
75
70
RG = 5Ω
65
VGS = 10V
70
65
VDS = 30V
60
t r - Nanoseconds
t r - Nanoseconds
75
55
50
45
I D = 50A
40
35
TJ = 25ºC
60
RG = 5Ω
55
VGS = 10V
50
VDS = 30V
45
40
I D = 25A
30
35
25
30
20
TJ = 125ºC
25
25
35
45
55
65
75
85
95
105
115
125
25
30
35
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
65
100
50
I D = 50A, 25A
80
45
60
40
t f - Nanoseconds
55
86
61
82
59
78
57
74
55
70
53
51
62
35
20
6
8
10
12
14
16
18
25
35
45
RG - Ohms
64
84
62
VDS = 30V
68
54
64
52
60
50
56
52
TJ = 25ºC
46
48
36
115
50
125
40
44
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
48
230
TJ = 125ºC, VGS = 10V
VDS = 30V
150
t f - Nanoseconds
t f - Nanoseconds
72
RG = 5Ω, VGS = 10V
32
105
td(off) - - - -
tf
170
t d ( o f f ) - Nanoseconds
td(off) - - - -
28
95
260
76
24
85
200
I D = 25A
130
170
110
140
I D = 50A
90
110
70
80
50
t d ( o f f ) - Nanoseconds
60
48
75
190
80
56
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
TJ = 125ºC
58
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
tf
54
VDS = 30V
45
20
58
RG = 5Ω, VGS = 10V
47
30
4
td(off) - - - -
tf
49
40
66
I D = 50A, 25A
t d ( o f f ) - Nanoseconds
VDS = 30V
90
I D = 25A, 50A
63
60
TJ = 125ºC, VGS = 10V
120
50
65
t d ( o n ) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
tr
45
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
160
140
40
I D - Amperes
50
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_220N055T (5V) 6-16-06.xls