IXYS IXTP32P05T

IXTY32P05T
IXTA32P05T
IXTP32P05T
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
VDSS
ID25
=
=
≤
RDS(on)
D
- 50V
- 32A
Ω
39mΩ
TO-252 (IXTY)
G
G
S
D (Tab)
S
TO-263 AA (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
- 50
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 50
V
VGSS
Continuous
±15
V
VGSM
Transient
±25
V
ID25
TC = 25°C
- 32
A
IDM
TC = 25°C, Pulse Width Limited by TJM
-110
A
IA
EAS
TC = 25°C
TC = 25°C
- 32
200
A
mJ
PD
TC = 25°C
83
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
0.35
2.50
3.00
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
International Standard Packages
Avalanche Rated
z
Extended FBSOA
z
Fast Intrinsic Diode
z
Low RDS(ON) and QG
z
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = - 250μA
- 50
VGS(th)
VDS = VGS, ID = - 250μA
- 2.5
IGSS
VGS = ± 15V, VDS = 0V
±50 nA
IDSS
VDS = VDSS, VGS = 0V
- 3 μA
-100 μA
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
z
z
V
- 4.5
V
39 mΩ
z
Applications
z
z
z
z
z
z
© 2013 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS99967C(01/13)
IXTY32P05T IXTA32P05T
IXTP32P05T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
11
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
17
S
1975
pF
315
pF
160
pF
VGS = 0V, VDS = - 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 10Ω (External)
tf
Qg(on)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgs
TO-252 Outline
Qgd
20
ns
28
ns
39
ns
Dim.
27
ns
A
A1
2.19
0.89
46
nC
19
nC
A2
b
11
nC
1.5 °C/W
RthJC
RthCS
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max.
- 32
A
Repetitive, Pulse Width Limited by TJM
-128
A
VSD
IF = - 32A, VGS = 0V, Note 1
-1.5
V
trr
QRM
IRM
IF = -16A, -di/dt = -100A/μs
VR = - 25V, VGS = 0V
Note
1:
26
21
-1.6
Pins:
1 - Gate
3 - Source
Millimeter
Min. Max.
2,4 - Drain
Inches
Min.
Max.
2.38
1.14
0.086
0.035
0.094
0.045
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
TO-220 Outline
ns
nC
A
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins:
1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY32P05T IXTA32P05T
IXTP32P05T
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
-32
-100
VGS = -10V
- 9V
-28
VGS = -10V
-90
-80
- 8V
-24
- 9V
-20
ID - Amperes
ID - Amperes
-70
- 7V
-16
-12
- 6V
-60
- 8V
-50
-40
- 7V
-30
-8
- 5V
-4
- 6V
-10
- 5V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
0
-1.4
-1
-2
-3
-4
-5
-6
-7
-8
-9
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = -16A Value vs.
Junction Temperature
-10
1.8
-32
VGS = -10V
- 9V
-28
R DS(on) - Normalized
-20
- 7V
-16
- 6V
-12
VGS = -10V
1.6
- 8V
-24
ID - Amperes
-20
I D = - 32A
1.4
I D = -16A
1.2
1.0
-8
0.8
- 5V
-4
0
0.6
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = -16A Value vs.
Drain Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
1.6
-35
VGS = -10V
1.5
-30
TJ = 125ºC
1.4
-25
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
1.3
1.2
1.1
-20
-15
-10
TJ = 25ºC
1.0
-5
0.9
0
0
-5
-10
-15
-20
-25
-30
-35
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-40
-45
-50
-55
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTY32P05T IXTA32P05T
IXTP32P05T
Fig. 7. Input Admittance
Fig. 8. Transconductance
24
-35
TJ = - 40ºC
-30
20
25ºC
16
g f s - Siemens
ID - Amperes
-25
-20
TJ = 125ºC
25ºC
- 40ºC
-15
-10
125ºC
12
8
4
-5
0
-3.0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
0
-6.5
-4
-8
-12
VGS - Volts
-90
-9
VDS = - 25V
-80
-8
I D = -16A
-70
-7
-60
-6
-50
TJ = 125ºC
-30
-20
-24
-28
-32
-36
45
50
Fig. 10. Gate Charge
-10
VGS - Volts
IS - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-40
-16
ID - Amperes
I G = -1mA
-5
-4
-3
TJ = 25ºC
-20
-2
-10
-1
0
0
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
0
-1.6
5
10
VSD - Volts
15
20
25
30
35
40
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
-1,000
10,000
Ciss
- 100
ID - Amperes
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
Crss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
RDS(on) Limit
25µs
100µs
- 10
-1
-1
1ms
TJ = 150ºC
10ms
TC = 25ºC
Single Pulse
100ms
- 10
VDS - Volts
- 100
IXTY32P05T IXTA32P05T
IXTP32P05T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
30
29
RG = 10Ω , VGS = -10V
29
28
VDS = - 30V
TJ = 25ºC
t r - Nanoseconds
t r - Nanoseconds
28
27
26
I
= -16A
D
25
24
I
RG = 10Ω , VGS = -10V
27
VDS = - 30V
26
25
D = - 32A
24
23
22
TJ = 125ºC
23
25
35
45
55
65
75
85
95
105
115
-16
125
-18
-20
-22
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
TJ = 125ºC, VGS = -10V
70
36
28.0
34
27.5
30
50
28
I D = -16A, - 32A
26
30
24
25.5
32
25.0
18
23.5
18
20
22
24
26
28
30
32
28
I D = -16A, - 32A
24.5
24.0
16
25
34
35
45
td(off) - - - -
50
80
45
70
tf
30
25.0
25
TJ = 25ºC, 125ºC
24.5
24.0
-26
-28
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-30
-32
t f - Nanoseconds
t f - Nanoseconds
25.5
-24
105
115
16
125
td(off) - - - -
70
60
50
50
40
I
D
40
= - 32A
30
20
20
15
10
30
I D = -16A
20
10
10
12
14
16
18
20
22
24
RG - Ohms
26
28
30
32
34
t d(off) - Nanoseconds
35
-22
95
VDS = - 30V
60
t d(off) - Nanoseconds
40
26.0
-20
85
TJ = 125ºC, VGS = -10V
VDS = - 30V
-18
75
80
RG = 10Ω, VGS = -10V
-16
65
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
27.5
26.5
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
tf
24
20
RG - Ohms
27.0
44
I D = -16A
VDS = - 30V
36
20
14
48
td(off) - - - -
RG = 10Ω, VGS = -10V
26.0
10
0
tf
40
22
12
-32
26.5
20
10
-30
t d(off) - Nanoseconds
60
40
-28
52
27.0
32
VDS = - 30V
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
t f - Nanoseconds
80
-26
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
90
tr
-24
ID - Amperes
IXTY32P05T IXTA32P05T
IXTP32P05T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_32P05T(A1)11-05-10-B