IXTY32P05T IXTA32P05T IXTP32P05T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS(on) D - 50V - 32A Ω 39mΩ TO-252 (IXTY) G G S D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 50 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 32 A IDM TC = 25°C, Pulse Width Limited by TJM -110 A IA EAS TC = 25°C TC = 25°C - 32 200 A mJ PD TC = 25°C 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 50 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ± 15V, VDS = 0V ±50 nA IDSS VDS = VDSS, VGS = 0V - 3 μA -100 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V - 4.5 V 39 mΩ z Applications z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99967C(01/13) IXTY32P05T IXTA32P05T IXTP32P05T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss 17 S 1975 pF 315 pF 160 pF VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 10Ω (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs TO-252 Outline Qgd 20 ns 28 ns 39 ns Dim. 27 ns A A1 2.19 0.89 46 nC 19 nC A2 b 11 nC 1.5 °C/W RthJC RthCS TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 32 A Repetitive, Pulse Width Limited by TJM -128 A VSD IF = - 32A, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = -16A, -di/dt = -100A/μs VR = - 25V, VGS = 0V Note 1: 26 21 -1.6 Pins: 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. 2.38 1.14 0.086 0.035 0.094 0.045 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline ns nC A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY32P05T IXTA32P05T IXTP32P05T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -32 -100 VGS = -10V - 9V -28 VGS = -10V -90 -80 - 8V -24 - 9V -20 ID - Amperes ID - Amperes -70 - 7V -16 -12 - 6V -60 - 8V -50 -40 - 7V -30 -8 - 5V -4 - 6V -10 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -1 -2 -3 -4 -5 -6 -7 -8 -9 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = -16A Value vs. Junction Temperature -10 1.8 -32 VGS = -10V - 9V -28 R DS(on) - Normalized -20 - 7V -16 - 6V -12 VGS = -10V 1.6 - 8V -24 ID - Amperes -20 I D = - 32A 1.4 I D = -16A 1.2 1.0 -8 0.8 - 5V -4 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -16A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 1.6 -35 VGS = -10V 1.5 -30 TJ = 125ºC 1.4 -25 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.3 1.2 1.1 -20 -15 -10 TJ = 25ºC 1.0 -5 0.9 0 0 -5 -10 -15 -20 -25 -30 -35 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -40 -45 -50 -55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTY32P05T IXTA32P05T IXTP32P05T Fig. 7. Input Admittance Fig. 8. Transconductance 24 -35 TJ = - 40ºC -30 20 25ºC 16 g f s - Siemens ID - Amperes -25 -20 TJ = 125ºC 25ºC - 40ºC -15 -10 125ºC 12 8 4 -5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -6.5 -4 -8 -12 VGS - Volts -90 -9 VDS = - 25V -80 -8 I D = -16A -70 -7 -60 -6 -50 TJ = 125ºC -30 -20 -24 -28 -32 -36 45 50 Fig. 10. Gate Charge -10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -40 -16 ID - Amperes I G = -1mA -5 -4 -3 TJ = 25ºC -20 -2 -10 -1 0 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 -1.6 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance -1,000 10,000 Ciss - 100 ID - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. RDS(on) Limit 25µs 100µs - 10 -1 -1 1ms TJ = 150ºC 10ms TC = 25ºC Single Pulse 100ms - 10 VDS - Volts - 100 IXTY32P05T IXTA32P05T IXTP32P05T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 29 RG = 10Ω , VGS = -10V 29 28 VDS = - 30V TJ = 25ºC t r - Nanoseconds t r - Nanoseconds 28 27 26 I = -16A D 25 24 I RG = 10Ω , VGS = -10V 27 VDS = - 30V 26 25 D = - 32A 24 23 22 TJ = 125ºC 23 25 35 45 55 65 75 85 95 105 115 -16 125 -18 -20 -22 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = -10V 70 36 28.0 34 27.5 30 50 28 I D = -16A, - 32A 26 30 24 25.5 32 25.0 18 23.5 18 20 22 24 26 28 30 32 28 I D = -16A, - 32A 24.5 24.0 16 25 34 35 45 td(off) - - - - 50 80 45 70 tf 30 25.0 25 TJ = 25ºC, 125ºC 24.5 24.0 -26 -28 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -30 -32 t f - Nanoseconds t f - Nanoseconds 25.5 -24 105 115 16 125 td(off) - - - - 70 60 50 50 40 I D 40 = - 32A 30 20 20 15 10 30 I D = -16A 20 10 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 35 -22 95 VDS = - 30V 60 t d(off) - Nanoseconds 40 26.0 -20 85 TJ = 125ºC, VGS = -10V VDS = - 30V -18 75 80 RG = 10Ω, VGS = -10V -16 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 27.5 26.5 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 24 20 RG - Ohms 27.0 44 I D = -16A VDS = - 30V 36 20 14 48 td(off) - - - - RG = 10Ω, VGS = -10V 26.0 10 0 tf 40 22 12 -32 26.5 20 10 -30 t d(off) - Nanoseconds 60 40 -28 52 27.0 32 VDS = - 30V t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 80 -26 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 90 tr -24 ID - Amperes IXTY32P05T IXTA32P05T IXTP32P05T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_32P05T(A1)11-05-10-B