SEMICONDUCTOR KIC7S66FU TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT BILATERAL SWITCH B B1 5 2 C A C 1 A1 4 3 H The KIC7S66FU is a high speed C2MOS BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the Cl input is high, and the switch turns OFF while low. Input is equipped with protection circuits against static discharge or transient excess voltage. D T DIM A A1 B B1 C D G H T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G FEATURES ・High Speed : tpd=7ns(Typ.) at VCC=5V. ・Low Power Dissipation : ICC=1μA(Max.) at Ta=25℃. ・High Noise Immunity : VNIH=VNIL=28% VCC(Min.). ・Low ON Resistance : RON=100Ω(Typ.) at VCC=9V. USV ・Low T.H.D : THD=0.05%(Typ.) at VCC=5V. MARKING Lot No. MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC -0.5～10 V Control Input Voltage VIN -0.5～VCC+0.5 V Swith I/O Voltage VI/O -0.5～VCC+0.5 V Control Diode Current ICK ±20 mA Output Diode Current IOK ±20 mA Through I/O Current IT ±12.5 mA DC VCC/Ground Current ICC ±25 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65～150 ℃ Lead Temperature (10s) TL 260 ℃ 2008 .9. 17 Revision No : 3 Type Name SW PIN CONNECTION (TOP VIEW) IN/OUT 1 OUT/IN 2 GND 3 5 VCC 4 CONT. 1/3 KIC7S66FU LOGIC DIAGRAM C TRUTH TABLE X 1 I/O I O/I I CONTROL SWITCH FUNCTION H ON L OFF RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage VCC 2～9 V Control Input Voltage VIN 0～VCC V Switch I/O Voltage VI/O 0～VCC V Operating Temperature Topr -40～85 ℃ tr, tf 0～1000 (VCC=2.0V) 0～ 500 (VCC=4.5V) 0～ 400 (VCC=6.0V) 0～ 250 (VCC=9.0V) ns Input Rise and Fall Time DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL Ta=25℃ TEST CONDITION Ta=-40～85℃ VCC MIN. TYP. MAX. MIN. MAX. UNIT High-Level Control Input Voltage VIHC - 2.0 4.5 9.0 1.5 3.15 6.3 - - 1.5 3.15 6.3 - V Low-Level Control Input Voltage VILC - 2.0 4.5 9.0 - - 0.5 1.35 2.7 - 0.5 1.35 2.7 V VIN=VIHC VI/O=VCC to GND VI/O≦1mA 4.5 9.0 - 192 110 340 170 - 400 200 VIN=VIHC VI/O=VCC to GND VI/O≦1mA 2.0 4.5 9.0 - 320 140 100 200 150 - 260 190 ON Resistance RON Input/Output Leakage Current (SWITCH OFF) IOFF VOS=VCC or GND VIS=GND or VCC VIN=VILC 9.0 - - ±100 - ±1000 Switch Input Leakage Current (SW ON, Output OPEN) IIZ VOS=VCC or GND VIN=VIHC 9.0 - - ±100 - ±1000 Control Input Current IIN VIN=VCC or GND 9.0 - - ±100 - ±1000 Quiscent Device Current ICC VIN=VCC or GND 6.0 9.0 - - 1.0 4.0 - 10.0 40.0 2008 .9. 17 Ω nA Revision No : 3 μA 2/3 KIC7S66FU AC ELECTRICAL CHARACTERISTICS (CL=50pF, Input tr=tf=6ns) Ta=25℃ CHARACTERISTIC SYMBOL Phase difference between input and output Ta=-40～85℃ TEST CONDITION фI-O - UNIT VCC MIN. TYP. MAX. MIN. MAX. 2.0 4.5 9.0 - 20 7 4 75 15 12 - 100 20 15 ns Output Enable Time tPZL tPZH RL=1kΩ 2.0 4.5 9.0 - 20 13 9 150 30 18 - 190 38 33 ns Output Disable Time tPLZ tPHZ RL=1kΩ 2.0 4.5 9.0 - 40 11 10 170 35 30 - 220 44 38 ns RL=1kΩ, CL=15pF VOUT=1/2 VCC 2.0 4.5 9.0 - 30 30 30 - - - MHz Maximum Control Input Frequency - Control Input Capacitance CIN - - - 5 10 - 10 Switch Terminal Capacitance CI/O - - - 6 - - - Feedthrough Capacitance CIOS - - - 0.5 - - - Power Dissipation Capacitance CPD - - 15 - - - pF (Note 1) Note 1 : CPD defined as the value of internal equivalent capacitance which is calculated from the operating current consumption without load Average operating current can be obtained by the equation : ICC(opr)=CPD・VCC・fIN + ICC ANALOG SWITCH CHARACTERISTICS (GND=0V, Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION TYP. UNIT VCC fIN=1kHz, VIN=4VPP (VCC=4.5V) RL=10kΩ, VIN=8VPP (VCC=9.0V), CL=50pF 4.5 9.0 0.05 0.04 % fMAX Adjust fIN voltage to obtain 0dBm at VOS Increase fIN frequency until dB Meter reads -3dB. RL=50Ω, CL=10pF, fIN=1MHz, Sine Wave 4.5 9.0 200 200 MHz Feedthrough (SWITCH ON) - Vin is ceintered at VCC/2 Adjust input for 0dBm RL=600Ω, CL=50pF, fIN=1MHz, Sine Wave 4.5 9.0 -60 -60 dB Crosstalk (CONTROL SWITCH) - RL=600Ω, CL=50pF, IN=1MHz, PULSE (tr=tf=6ns) 4.5 9.0 60 100 mV Total Harmonic Distortion (T.H.D) Maximum Propagation Frequency (SWITCH ON) - Note : These Characteristics are determined by design of devices. 2008 .9. 17 Revision No : 3 3/3