KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 160 Units V 140 V 6 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 160 140 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=80V, IE=0 IEBO hFE1 hFE2 Emitter Cut-off Current * DC Current Gain Typ. Units V V 6 V VEB=4V, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A Max. 60 20 0.1 mA 0.1 mA 200 VCE(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A 2.5 V VBE(on) Base-Emitter ON Voltage VCE=5V, IC=1A 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 210 pF tON Turn ON Time 0.26 µs tF Fall Time 0.68 µs tSTG Storage Time VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω 6.68 µs * Pulse Test : PW=20µs hFE Classification Classification O Y hFE1 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. B, Noverber 2000 KSC4468 Typical Characteristics 18 1000 IB = 400mA IB = 350mA IB = 300mA 14 VCE = 5V IB = 250mA IB = 200mA 12 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 16 IB = 150mA 10 IB = 100mA 8 6 IB = 50mA 4 100 10 2 IB = 0 1 0.01 0 0 1 2 3 4 5 6 7 8 9 10 0.1 Figure 1. Static Characterstic 10 100 Figure 2. DC current Gain 10 10 IC = 10 IB VBE(sat)[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 0.1 0.01 0.01 0.1 1 10 IC = 10 IB 1 0.1 0.01 0.01 100 IC[A], COLLECTOR CURRENT 0.1 1 10 100 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 100 12 VCE = 5V 4 2 m s DC 1 0.1 VCEO MAX 6 IC MAX. (DC) s IC[A], COLLECTOR CURRENT 8 10 m 10 IC[A], COLLECTOR CURRENT 10 0 IC MAX. (Pulse) 10 *SINGLE NONREPETITIVE o PULSE TC =25[ C] 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2000 Fairchild Semiconductor International 1.6 0.01 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B, Noverber 2000 KSC4468 Typical Characteristics (Continued) 140 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. B, Noverber 2000 KSC4468 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. B, Noverber 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E