SEMICONDUCTOR KTA1834D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) A I C Large Collector Current J D : IC=-10A(dc) IC=-15A(10ms, single pulse) M O K E Q B Complementary to KTC5001D/L. H CHARACTERISTIC F SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltag VEBO -6 V IC -10 ICP -15 IB -2 Collector Current Base Current Ta=25 Dissipation Tc=25 1 L F 2 3 1. BASE 2. COLLECTOR 1.0 PC 10 3. EMITTER DPAK A A I A C J W B Collector Power P ) Tj 150 Tstg -55 150 Storage Temperature Range K Q Junction Temperature MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX D MAXIMUM RATING (Ta=25 DIM A B C D E F H I J K L M O P Q P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V - - -10 A Emitter Cut-off Current IEBO VEB=-5V - - -10 A Collector-Base Breakdown Voltage BVCBO IC=-50 A -30 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -20 V Emitter-Base Breakdown Voltage BVEBO IE=-50 A -6 V hFE (1) (Note) VCE=-2V, IC=-0.5A 180 - 390 hFE (2) VCE=-2V, IC=-4.0A 82 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-4.0A, IB=-0.05A - -0.16 -0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=-4A, IB=-0.05A - -0.9 -1.2 V VCE=-5V, IE=1.5A, f=50MHz - 150 - MHz VCB=-10V, IE=0, f=1MHz - 220 - pF DC Current Gain fT Transition Frequency Collector Output Capacitance Note : hFE(1) Classification 2003. 3. 27 Cob GR:180~390. Revision No : 5 1/3 KTA1834D/L I C - V BE 1k DC CURRENT GAIN h FE V CE =-2V -0.1 5 C Ta = 2 -0.01 Ta=-5 5 C -1 Ta= 150 C COLLECTOR CURRENT I C (A) -10 h FE - I C Ta=25 C 500 VCE =-5V 300 VCE =-2V V CE =-1V 100 50 -0.001 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 30 -0.01 -1.4 -0.1 -1K V CE =-2V COLLECTOR SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT GAIN h FE 2K Ta=150 C 300 Ta=25 C Ta=-55 C 100 50 30 -0.01 -1 -100 -30 I C /I B =80 40 20 -10 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) VCE(sat) - I C VBE(sat) - I C -1K -100 -10 -300 COLLECTOR CURRENT I C (A) -300 -30 Ta=25 C -3 -0.01 -20 I C /I B =80 -3 -0.01 Ta=-55 C Ta=25 C Ta=150 C -0.1 -1 COLLECTOR CURRENT I C (A) 2003. 3. 27 -10 BASE SATURATION VOLTAGE VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE VCE(sat) (V) -1K -0.1 Revision No : 5 -20 VCE(sat) - I C h FE - I C 500 -10 COLLECTOR CURRENT IC (A) COLLECTOR EMITTER VOLTAGE V BE (V) 1K -1 -10 -20 -10 -20 I C /I B =80 -300 -100 Ta=-55 C -30 Ta=150 C Ta=25 C -10 -3 -0.01 -0.1 -1 -10 -20 COLLECTOR CURRENT I C (A) 2/3 KTA1834D/L C ob - VCE 1k Ta=25 C V CE =-5V f=50MHz 500 300 100 50 30 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) fT - IE 3K Ta=25 C f=1MHz I E =0A 1K 500 300 100 50 -0.1 EMITTER CURRENT I E (A) -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE V CE (V) C ib - VEB SAFE OPERATING AREA 30 10K I C MAX(PULSE) * 5K 3K COLLECTOR CURRENT IC (A) Ta=25 C f=1MHz I C =0A 1K 500 300 100 -0.05 -0.1 -0.3 -1 -3 -10 10 OP ER AT IO 1 N Ta =2 0.3 5 C 0.1 0.03 0.01 0.01 BASE-EMITTER VOLTAGE V EB (V) DC 3 * mS 10 S * 0m 10 EMITTER INPUT CAPACITANCE C ib (pF) -0.3 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE 0.03 0.1 0.3 1 3 10 30 COLLECTOR POWER DISSIPATION Pc (W) COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta 12 1 Tc=25 C 1 10 2 Ta=25 C 8 6 4 2 0 2 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 5 3/3