SEMICONDUCTOR KTC3503 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. A B D C E FEATURES High breakdown voltage : VCEO F 300V. Small reverse transfer capacitance and G excellent high frequency characteristic. H : Cre=1.8pF (VCB=30V, f=1MHz) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V DC IC 100 Pulse ICP 200 Collector Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range L M ) CHARACTERISTIC DIM A B C D E F G H J K L M N O P J Complementary KTA1381. 1.5 PC 7 Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE mA MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 W ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=200V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A DC Current Gain hFE (Note) VCE=10V, IC=10mA 60 - 200 fT VCE=30V, IC=10mA - 150 - MHz Transition Frequency Collector Output Capacitance Cob VCB=30V, IE=0, f=1MHz - 2.6 - pF Reverse Transfer Capacitance Cre VCB=30V, IE=0, f=1MHz - 1.8 - pF Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2mA - - 1.0 V Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 300 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 300 - - V Base-Emitter Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V Note : hFE Classification 2003. 7. 24 O:60 120, Y:100 Revision No : 3 200 1/3 KTC3503 I C - V CE 20 10 I B =120µA COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V CE I B =100µA 16 I B=80µA 12 I B =60µA 8 I B =40µA 4 0 I B =20µA I B =0 0 2 4 6 8 10 IB=30µA 4 IB=20µA IB=10µA 2 IB=0 0 0 2 4 6 h FE - I C 500 DC CURRENT GAIN h FE VCE =10V 100 5 C C 40 Ta=-2 C 60 Ta=25 80 20 0.2 0.4 0.6 0.8 Ta=25 C Ta=-25 C 100 50 30 1 3 10 30 COLLECTOR CURRENT I C (mA) fT - I C C Ob - VCB VCE =30V 300 100 50 30 1 Ta=75 C BASE-EMITTER VOLTAGE VBE (V) 500 3 10 30 Revision No : 3 100 10 VCE =10V 300 10 0.5 1.0 OUTPUT CAPACITANCE Cob (pF) 0 10 0.5 8 I C - V BE Ta=75 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 6 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) 2003. 7. 24 IB=40µA COLLECTOR-EMITTER VOLTAGE VCE (V) 120 0 IB=60µA IB=50µA 8 50 100 f T =1MHz 30 10 5 3 1 0.5 1 3 10 30 100 COLLECTOR BASE VOLTAGE V CB (V) 2/3 KTC3503 C re - VCB 5 3 1 0.5 1 3 10 30 0.5 0.3 0.1 0.05 0.03 0.5 1 3 10 30 100 COLLECTOR CURRENT I C (mA) VBE(sat) - I C SAFE OPERATING AREA 5 200 S* 100 10 0µ 30 OP Ta ER =2 AT 5 C I ON 30 50 10 50 D Tc C O =2 PE 5 RA C T S* 3 DC S* 0.3 I C MAX.(CONTINUOUS) 0m 0.5 100 1m 1 I C MAX.(PULSED)* 10 3 1 200 300 IC /I B =10 0.5 I C /I B =10 COLLECTOR BASE VOLTAGE V CB (V) 10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) 100 VOLTAGE VCE(sat) (V) 10 1 COLLECTOR CURRENT I C (mA) REVERSE TRANSFER CAPACITANCE C re (pF) f T =1MHz 30 COLLECTOR-EMITTER SATURATION VCE(sat) - I C 50 IO N * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 5 3 COLLECTOR CURRENT I C (mA) 3 10 30 100 300 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR EMITTER VOLTAGE VCE (V) Pc - Ta 8 (1) Tc=Ta (1) 6 INFINITE HEAT SINK (2) NO HEAT SINK 4 2 0 (2) 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 3 3/3