SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. A N O FEATURES B Q K F ・Complementary to KTD1530 R G H I C J ・Recommended for 80W Audio Amplifier Output Stage. D MAXIMUM RATING (Ta=25℃) E SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25℃) PC 100 W Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ L CHARACTERISTIC M d P 1 Storage Temperature Range P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T TO-3P(N)-E EQUIVALENT CIRCUIT EMITTER 70Ω BASE COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 μA V(BR)CEO IC=-30mA, IB=0 -150 - - V hFE VCE=-4V, IC=-7A 15,000 - 30,000 Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V fT VCE=-12V, IC=-2A - 50 - MHz VCB=-10V, IE=0, f=1MHz - 230 - pF Collector-Emitter Breakdown Voltage DC Current Gain Transition Frequency Collector Output Capacitance 2012. 8. 21 Revision No : 0 Cob 1/3 KTB2530 2012. 8. 21 Revision No : 0 2/3 KTB2530 2012. 8. 21 Revision No :0 3/3