LRC L2N7002LT1G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
L2N7002LT1G
N–Channel SOT–23
•
3
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
1
• ESD Protected:1000V
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
ID
ID
mAdc
IDM
±115
±75
±800
VGS
VGSM
±20
±40
Vdc
Vpk
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
PD
300
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
TJ, Tstg
-55 to
+150
°C
Simplified Schematic
Gate
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
1
3
THERMAL CHARACTERISTICS
Junction and Storage Temperature
2.4
Source
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002LT1G
702
3000 Tape & Reel
L2N7002LT3G
702
10000 Tape & Reel
2
Drain
3
702
1
Gate
702
W
W
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Drain
2
Source
= Device Code
=Month Code
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
L2N7002LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
–
–
Vdc
IDSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
1
µAdc
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
IGSSR
–
–
-1
µAdc
VGS(th)
1.0
1.6
2
Vdc
ID(on)
500
–
–
mA
–
–
–
–
3.75
0.375
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
13.5
gFS
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
17
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
10
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
2.5
5.0
pF
td(on)
–
7
20
ns
td(off)
–
11
40
ns
VSD
–
–
–1.5
Vdc
IS
–
–
–115
mAdc
ISM
–
–
–800
mAdc
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
Static Drain–Source On–State Resistance
TC = 25°C
(VGS = 10 V, ID = 500 mAdc)
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on)
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
Vdc
Ohms
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
L2N7002LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0.8
VGS = 10 V
ID, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
9.0
125°C
0.6
0.4
0.2
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-o60
-o20
+o20
+o60
T, TEMPERATURE (°C)
9.0
10
Figure 2. Transfer Characteristics
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-o55°C
+o100
Figure 3. Temperature versus Static
Drain–Source On–Resistance
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
+o140
-o60
-o20
+o20
T, TEMPERATURE (°C)
+o60
+o100
Figure 4. Temperature versus Gate
Threshold Voltage
Rev .O 3/4
+o140
LESHAN RADIO COMPANY, LTD.
L2N7002LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 4/4