LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1 LMBF170LT1 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Shipping 6Z 3000/Tape&Reel 6Z (Pb-Free) 3000/Tape&Reel 6Z 10000/Tape&Reel 6Z (Pb-Free) 10000/Tape&Reel LMBF170LT1 LMBF170LT1G LMBF170LT3 LMBF170LT3G Drain 3 Marking 2 Source MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 ms) VGS VGSM ±20 ±40 Vdc Vpk ID IDM 0.5 0.8 Adc Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg –55 to +150 °C Drain Current – Continuous – Pulsed 1 Gate THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD 1. FR–5 = 1.0 0.75 0.062 in. LMBF170LT1–1/4 LESHAN RADIO COMPANY, LTD. LMBF170LT1 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 – Vdc IGSS – 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) – 5.0 W ID(off) – 0.5 mA Ciss – 60 pF td(on) – 10 ns td(off) – 10 OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2.) On–State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. +25 V PULSE GENERATOR 50 W ton td(on) 125 W Vin 20 dB 50 W ATTENUATOR 40 pF 50 W TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout tr 90% td(off) 10% INPUT 1 MW Vin 10% 90% toff tf 50% 90% 50% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform LMBF170LT1–2/4 LESHAN RADIO COMPANY, LTD. LMBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 4. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 3. Ohmic Region 2.0 25°C -ā55°C +ā100 Figure 5. Temperature versus Static Drain–Source On–Resistance +ā140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 Figure 6. Temperature versus Gate Threshold Voltage LMBF170LT1–3/4 LESHAN RADIO COMPANY, LTD. LMBF170LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. Gate 2. Source 3. Drain 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LMBF170LT1-4/4