LRC LBSS139WT1G

LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
LBSS139WT1G
N–Channel SC–70
3
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
1
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2
• Miniature SC–70 Surface Mount Package saves board space
• Pb−Free Package May be Available. The G−Suffix Denotes a
SOT–323 / SC – 70
Pb−Free Lead Finish
200 mAMPS
50 VOLTS
R DS(on) = 3.5 • ESD Protected:1500V
N - Channel
3
MAXIMUM RATINGS (TA = 25 o C unless otherwise noted)
d
Symbol
Value
Unit
VDSS
50
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
ID
200
800
Rating
Drain–to–Source Voltage
IDM
s
2
PD
150
mW
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
RθJA
833
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
g
mA
Total Power Dissipation @ TA = 25°C
Thermal Resistance – Junction–to–Ambient
1
MARKING DIAGRAM
& PIN ASSIGNMENT
J2
M
•
J2 = Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
LBSS139WT1G
SC-70
3000 Tape & Reel
LBSS139WT3G
SC-70
10000 Tape & Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
50
–
–
Vdc
–
–
–
–
0.1
0.5
OFF CHARACTERISTICS
V(BR)DSS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
µAdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
±10
µAdc
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
–
1.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
–
–
5.6
–
10
3.5
gfs
100
–
–
mmhos
pF
ON CHARACTERISTICS (Note 1.)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
–
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
–
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
–
3.5
5.0
td(on)
–
–
20
td(off)
–
–
20
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
ns
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.7
0.9
VGS = 3.5 V
TJ = 25°C
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.8
-55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
2.2
1.25
ID = 1.0 mA
2
1.8
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
25°C
10
VDS = 40 V
TJ = 25°C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
Rev .O 3/5
145
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0.05
0
0.15
0.1
0.25
0.2
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
5
4
2
1
4
3.5
3
25°C
2.5
2
-55°C
1.5
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
4.5
0
-55°C
0.05
0
0.25
0.2
4.5
VGS = 10 V
4
150°C
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
Figure 8. On–Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.15
0.1
Figure 7. On–Resistance versus Drain Current
150°C
5
1
25°C
3
ID, DRAIN CURRENT (AMPS)
VGS = 4.5 V
5.5
150°C
6
Figure 6. On–Resistance versus Drain Current
6
VGS = 2.75 V
7
120
100
TJ = 150°C
0.1
25°C
-55°C
80
60
0.01
Ciss
40
Coss
20
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
Crss
0
5
10
15
20
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
Rev .O 4/5
25
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
SC-70
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev .O 5/5