NSC LMV115MGX

LMV115
GSM Baseband 30MHz 2.8V Oscillator Buffer
General Description
Features
The LMV115 is a 30MHz buffer specially designed to minimize the effects of spurious signals from the base band chip
to the oscillator. The buffer also minimizes the influence of
varying load resistance and capacitance to the oscillator and
increases the drive capability.
The input of the LMV115 is internally biased with two equal
resistors to the power supply rails. This allows AC coupling
on the input.
The LMV115 offers a shutdown function to optimize current
consumption. This shutdown function can also be used to
control the supply voltage of an external oscillator. The device is in shutdown mode when the shutdown pin is connected to VDD.
The LMV115 comes in SC70-6 package. This space saving
product reduces components, improves clock signal and
allows ease of placement for the best form factor.
(Typical 2.8V supply; values unless otherwise specified)
n Low supply current: 0.3mA
n 2.5V to 3.3V supply
n AC coupling possible without external bias resistors.
n Includes shutdown function external oscillator
n SC70-6 pin package 2.1 x 2mm
n Operating Temperature Range −40˚C to 85˚C
Applications
n Cellular phones
n GSM Modules
n Oscillator Modules
Schematic Diagram
20075129
© 2003 National Semiconductor Corporation
DS200751
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LMV115 GSM Baseband 30MHz 2.8V Oscillator Buffer
December 2003
LMV115
Absolute Maximum Ratings (Note 1)
Junction Temperature (Note 6)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Mounting Temperature
Infrared or Convection (20 sec.)
ESD Tolerance
Human Body Model
Supply Voltage (V+ – V−)
150V (Note 3)
Supply Voltage (V+ – V−)
(Note 4), (Note 5)
Output Short Circuit to V−
(Note 4), (Note 5)
Output Short Circuit to V
Storage Temperature Range
2.5V to 3.3V
Temperature Range (Note 6), (Note 7)
3.6V
+
235˚C
Operating Ratings (Note 1)
2000V (Note 2)
Machine Model
+150˚C
−40˚C to +85˚C
Package Thermal Resistance (Note 6), (Note 7)
SC70-6
414˚C/W
−65˚C to +150˚C
2.8V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, shutdown = 0.0V, and RL =
50kΩ to V+/2, CL = 5pF to V+/2 and CCOUPLING = 1nF.Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
SSBW
Small Signal Bandwidth
VOUT < 0.5VPP; −3dB
31
MHz
GFN
Gain Flatness < 0.1dB
f > 50kHz
2.8
MHz
FPBW
Full Power Bandwidth (−3dB)
VOUT = 1.0VPP (+4.5dBm)
9
MHz
0.1VSTEP (10-90%)
11
Time Domain Response
tr
Rise Time
tf
Fall Time
ns
11
ts
Settling Time to 0.1%
0.1VSTEP
95
OS
Overshoot
0.1VSTEP
24
%
SR
Slew Rate
(Note 11)
18
V/µs
ns
Distortion and Noise Performance
HD2
2nd Harmonic Distortion
VOUT = 500mVPP; f = 100kHz
−41
dBc
HD3
3rd Harmonic Distortion
VOUT = 500mVPP; f = 100kHz
−43
dBc
THD
Total Harmonic Distortion
VOUT = 500mVPP; f = 100kHz
−38
dBc
en
Input-Referred Voltage Noise
f = 1MHz
Isolation
Output to Input
See also Typical Performance
Characteristics
27
nV/
> 40
dB
Static DC Performance
ACL
Small Signal Voltage Gain
VOS
Output Offset Voltage
TC VOS
Temperature Coefficient Output
Offset Voltage
(Note 12)
102
ROUT
Output Resistance
f = 10kHz
61
f = 25MHz
330
VOUT = 100mVPP
PSRR
Power Supply Rejection Ratio
V+ = 2.8V to V+ = 3.3V
IS
Supply Current
No Load; Shutdown = 2.8V
No Load; Shutdown = 0V
0.90
0.85
41
38
0.998
1.10
1.11
V/V
3.5
35
55
mV
µV/˚C
Ω
42
dB
0.0
2.00
314
450
520
µA
Miscellaneous Performance
RIN
CIN
Input Resistance
Input Capacitance
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Shutdown = 2.8V
65
Shutdown = 0V
64
Shutdown = 2.8V
1.82
Shutdown = 0V
1.50
2
kΩ
pF
(Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, shutdown = 0.0V, and RL =
50kΩ to V+/2, CL = 5pF to V+/2 and CCOUPLING = 1nF.Boldface limits apply at the temperature extremes.
Symbol
ZIN
VO
IO
ISC
RON
Parameter
Input Impedance
Output Swing Positive
Conditions
Min
(Note 9)
Typ
(Note 8)
f = 25MHz; Shutdown = 2.8V
2.38
f = 25MHz; Shutdown = 0V
2.47
RL = 50kΩ to V+/2
1.90
1.65
RL = 50kΩ to V /2
Linear Output Current
No Load; VOUT = V+ − 1.1V
(Sourcing)
−90
−35
−206
No Load; VOUT = V− + 1.1V
(Sinking)
100
50
205
No Load; Sourcing to V+/2
−90
−35
−186
No Load; Sinking from V+/2
100
50
191
Switch in ON Position
Units
kΩ
2.16
+
Output Swing Negative
Output Short-Circuit Current
(Note 5)
Max
(Note 9)
1.05
V
1.35
1.30
µA
µA
21
Ω
40
45
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human Body Model (HBM) is 1.5kΩ in series with 100pF.
Note 3: Machine Model, 0Ω in series with 200pF.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C
Note 5: Infinite Duration; Short circuit test is a momentary test. See next note.
Note 6: The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) -TA) / θJA. All numbers apply for packages soldered directly onto a PC board.
Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ = TA . There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where
TJ > TA. See Applications section for information on temperature de-rating of this device.
Note 8: Typical Values represent the most likely parametric norm.
Note 9: All limits are guaranteed by testing or statistical analysis.
Note 10: Positive current corresponds to current flowing into the device.
Note 11: Slew rate is the average of the positive and negative slew rate.
Note 12: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change.
3
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LMV115
2.8V Electrical Characteristics
LMV115
Connection Diagram
SC70-6
20075130
Top View
Ordering Information
Package
SC70-6
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Part Number
LMV115MG
LMV115MGX
Package Marking
Transport Media
250 Units Tape and Reel
B04
3k Units Tape and Reel
4
NSC Drawing
MAA06A
TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, and RL, CL is
+
connected to V /2; Unless otherwise specified.
Frequency and Phase Response
Frequency Response Over Temperature
20075104
20075103
Phase Response Over Temperature
Gain Flatness 0.1dB
20075114
20075106
Full Power Bandwidth
Transient Response Positive
20075105
20075119
5
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LMV115
Typical Performance Characteristics
LMV115
Typical Performance Characteristics TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, and RL, CL is
connected to V+/2; Unless otherwise specified. (Continued)
Harmonic Distortion vs. VOUT @ 100kHz
Transient Response Negative
20075118
20075107
Harmonic Distortion vs. VOUT @ 500kHz
Harmonic Distortion vs. VOUT @ 1MHz
20075108
20075109
THD vs. VOUT for Various Frequencies
Voltage Noise
20075102
20075117
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6
connected to V+/2; Unless otherwise specified. (Continued)
ROUT vs. Frequency
Input Impedance vs. Frequency
20075101
20075111
Isolation Output to Input
VOUT vs. IOUT (Sinking)
20075112
20075120
VOUT vs. IOUT (Sourcing)
ISC Sourcing vs. VSUPPLY
20075121
20075122
7
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LMV115
Typical Performance Characteristics TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, and RL, CL is
LMV115
Typical Performance Characteristics TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, and RL, CL is
connected to V+/2; Unless otherwise specified. (Continued)
ISC Sinking vs. VSUPPLY
VOS vs. VSUPPLY for 3 Units
20075124
20075123
VOS vs. VSUPPLY for Unit 1
VOS vs. VSUPPLY for Unit 2
20075125
20075126
VOS vs. VSUPPLY for Unit 3
ISUPPLY vs. VSUPPLY
20075128
20075127
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8
connected to V+/2; Unless otherwise specified. (Continued)
PSRR vs. Frequency
Small Signal Pulse Response
20075115
20075116
Large Signal Pulse Response
20075113
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LMV115
Typical Performance Characteristics TJ = 25˚C, V+ = 2.8V, V− = 0V, VCM = V+/2, and RL, CL is
LMV115
Application Section
GENERAL
The LMV115 is specially designed to minimize the effects of
spurious signals from the base band chip to the oscillator.
Beside this the influence of varying load resistance and
capacitance to the oscillator is minimized, while increasing
the drive capability. The input of the LMV115 is internally
biased with two equal resistors to the power supply rails, and
makes AC coupling possible without external bias resistors
at the input. The LMV115 has excellent gain phase margin.
The LMV115 offers a shutdown pin that can be used to
disable the device in order to optimize current consumption
and also has a feature to control the supply voltage to an
external oscillator. When the shutdown pin is connected to
VDD the device is in shutdown mode.
SWITCHED POWER SUPPLY CONNECTION
The LMV115 features an enable/disable function for an external oscillator by controlling its supply voltage (pin 4). See
also the schematic diagram on the front page. During normal
operating mode, pin 4 is connected to the positive supply rail
via an internal switch. The resistance between the positive
supply rail and pin 4, RON, is specified in the electrical
characterization table. Oscillators with a supply current up to
several milliamps can easily be powered from pin 4. During
shutdown, pin 4 is switched to the negative supply rail. The
simplified schematic for this part of the device is shown in
Figure 1
20075132
FIGURE 2. Dual Supply Mode
PSRR
If an AC signal is applied to one of the supply lines, while the
input is floating, the signal at the input pin is half the signal at
the supply line, causing the same signal at the output of the
buffer. This will result in a PSRR of only 6dB (see Figure 2).
In a typical application the input is driven from a low ohmic
source that means the disturbance at the supply lines is
attenuated by the series resistors of 110k and the source
impedance. In case the buffer is connected to a 50Ω source,
the resulting suppression will be 20*log [(R1 + RBIAS)/RBIAS]
= 67dB for signals at the supply line. The PSRR can also be
measured correctly for this type of input by shorten the input
to mid-supply. Due to the internal structure it is not recommended to measure with the input connected to ground. To
measure correctly the PSRR, two signals are applied to both
VDD and VEE but with 180˚ phase difference (see Figure 2).
In this case, both signals are subtracted and there will be no
signal at the input. The resulting disturbance at the output is
now only caused by the signals at the supply lines.
INPUT AND OUTPUT LEVEL
Due to the internal loop gain of 1, the output will follow the
input. The output voltage cannot swing as close to the supply
rail as the input voltage. For linear operation the input voltage swing should not exceed the output voltage swing. The
restrictions for the output voltage can be examined by the
two curves in Figure 3. The curve VOUT (V) shows the
response of the output signal versus the input signal and the
curve VOUT – VIN (V) shows the difference between the
output and the input signal.
20075131
FIGURE 1. Supply For External Oscillator
INPUT CONFIGURATION
The input of the LMV115 is internally biased at mid-supply by
a divider of two equal resistors. With the LMV115 in shutdown mode, the internal resistor connected to the VDD is
shortened to the negative power supply rail via a switch. This
makes the power consumption in ‘off’ mode almost zero, but
causes a small difference for the input impedance between
the on and off modes. Both resistors are 110kΩ so the
resulting input impedance will be approximately 55kΩ. The
input configuration allows AC coupling on the input of the
LMV115. A simplified schematic of the input is shown in
Figure 2.
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10
DRIVING RESISTIVE AND CAPACITIVE LOADS
(Continued)
The maximum output current of the LMV115 is about 200µA
which means the output can drive a maximum load of 1V/
200µA = 5kΩ. Using lower load resistances will exceed the
maximum linear output current. The LMV115 can drive a
small capacitive load, but make sure that every capacitor
directly connected to the output becomes part of the loop of
the buffer and will reduce the gain/phase margin, increasing
the instability at higher capacitive values. This will lead to
peaking in the frequency response and in extreme situations
oscillations can occur. A good practice when driving larger
capacitive loads is to include a series resistor to the load
capacitor. A to D converters present complex and varying
capacitive loads to the buffer. The best value for this isolation
resistance is often found by experimentation.
SHUTDOWN MODE
LMV115 offers a shutdown function that can be used to
disable the device and to optimize current consumption.
Switching between the normal mode and the shutdown
mode requires connecting the shutdown pin either to the
negative or the positive supply rail. If directly connected to
one of the supply rails, the part is guaranteed in the correct
mode. But if the shutdown pin is driven by other output
stages, there is a voltage range in which the installed mode
is not certainly set and it is recommended not to drive the
shutdown pin in this voltage range. As can be seen in Figure
5 this hysteresis varies from 1V to 1.6V. Below 1V the
LMV115 is securely ‘ON’ and above 1.6V securely ‘OFF’
while using a supply voltage of 2.8V.
20075133
FIGURE 3. VOUT – VIN
In Figure 3 the input signal is swept between both supply
rails (0V - 2.8V). The linear part of the plot ‘VOUT vs. VIN’
covers approximately the voltage range between 1.0V and
2.0V. If a difference of 50mV between output and input is
acceptable, the output range is between 1.05V and 2.15V
(see curve VOUT – VIN). Alternatively the output voltage
swing can be determined by using Figure 4. In the plot ‘Gain
vs. VIN’ it can be seen that the gain is flat for input voltages
from 1.15V till 2.1V. Outside this range the gain differs from
1. This will introduce distortion of the output signal.
20075135
FIGURE 5. Hysteresis
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT
VALUES SELECTION
For a good high frequency design both the active parts and
the passive ones should be suitable for the purpose they are
used for. Amplifying high frequencies is possible with standard through-hole components, but for frequencies above
several hundreds of MHz the best choice is using surface
mount devices. Nowadays designs are often assembled with
surface mount devices for the aspect of minimizing space,
but this also greatly improves the performance of designs,
handling high frequencies. Another important issue is the
PCB, which is no longer a simple carrier for all the parts and
a medium to interconnect them. The board becomes a real
20075134
FIGURE 4. Gain
Another point is the DC bias voltage necessary to get the
optimum output voltage swing. As discussed above, the
output voltage swing can be 1VPP, but if the two internal bias
resistors are used, the DC bias will be 1.4V, which is half of
the supply voltage of 2.8V. In this situation the output swing
will exceed the lower limit of 1.15V, so it is necessary to
introduce a small DC offset of 200mV to make use of the full
output swing range of the output stage.
11
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LMV115
Application Section
LMV115
Application Section
causes a significant increase in power consumption, while
loading inputs or outputs to heavily.
(Continued)
part itself, adding its own high frequency properties to the
overall performance of the circuit. It is good practice to have
at least one ground plane on a PCB giving a low impedance
path for all decoupling and other ground connections. In
order to achieve high immunity for unwanted signals from
outside, it is important to place the components as flat as
possible on the PCB. Be aware that a long lead can act as
an inductor, a capacitor or an antenna. A pair of leads can
even form a transformer. Careful design of the PCB avoids
oscillations or other unwanted behavior. Another important
issue is the value of components, which also determines the
sensitivity to pick-up unwanted signals. Choose the value of
resistors as low as possible, but avoid using values that
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NSC suggests the following evaluation board as a guide for
high frequency layout and as an aid in device testing and
characterization.
Device
Package
Evaluation Board
PN
LMV115
SC70-6
LMV115/117 Eval
Board
This free evaluation board is shipped when a device sample
request is placed with National Semiconductor.
12
LMV115 GSM Baseband 30MHz 2.8V Oscillator Buffer
Physical Dimensions
inches (millimeters) unless otherwise noted
NS Package Number MAA06A
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