LMV321, LMV358, LMV324 Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers The LMV321, LMV358, and LMV324 are CMOS single, dual, and quad low voltage operational amplifiers with rail−to−rail output swing. These amplifiers are a cost−effective solution for applications where low power consumption and space saving packages are critical. Specification tables are provided for operation from power supply voltages at 2.7 V and 5 V. Rail−to−Rail operation provides improved signal−to−noise preformance. Ultra low quiescent current makes this series of amplifiers ideal for portable, battery operated equipment. The common mode input range includes ground making the device useful for low−side current−shunt measurements. The ultra small packages allow for placement on the PCB in close proximity to the signal source thereby reducing noise pickup. Features • • • • • • • • Operation from 2.7 V to 5.0 V Single−Sided Power Supply LMV321 Single Available in Ultra Small 5 Pin SC70 Package No Output Crossover Distortion Industrial temperature Range: −40°C to +85°C Rail−to−Rail Output Low Quiescent Current: LMV358 Dual − 220 mA, Max per Channel No Output Phase−Reversal from Overdriven Input These are Pb−Free Devices Typical Applications • Notebook Computers and PDA’s • Portable Battery−Operated Instruments • Active Filters http://onsemi.com 5 1 1 TSOP−5 CASE 483 SC−70 CASE 419A 1 Micro8] CASE 846A 8 8 1 SOIC−8 CASE 751 1 UDFN8 CASE 517AJ 1 1 SOIC−14 CASE 751A TSSOP−14 CASE 948G ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. 120 80 100 70 CMRR (dB) GAIN (dB) 80 60 40 60 VS = 5 V 50 20 40 Over −40°C to +85°C Same Gain $1.8 dB (Typ) 0 −20 10 100 1k 10k 100k FREQUENCY (Hz) 1M 10M Figure 1. Open Loop Frequency Response (RL = 2 kW, TA = 255C, VS = 5 V) © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 8 30 −1 0 1 2 3 4 INPUT COMMON MODE VOLTAGE (V) 5 Figure 2. CMRR vs. Input Common Mode Voltage 1 Publication Order Number: LMV321/D LMV321, LMV358, LMV324 MARKING DIAGRAMS SC−70 Micro8 TSOP−5 8 5 V358 AYWG G 3ACAYWG G AAC MG G 1 AAC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 3AC = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) V358 = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) SOIC−8 UDFN8 8 V358 ALYWX G AC M G 1 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package V358 A L Y W G AC = Specific Device Code M = Date Code G = Pb−Free Package SOIC−14 TSSOP−14 14 14 LMV 324 ALYW LMV324 AWLYWWG 1 1 LMV324 = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package LMV324 = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package PIN CONNECTIONS 2 V− 3 + − −IN IN A− 4 IN A+ 2 7 OUT B 6 IN B− 3 B + − OUTPUT V− A − + 4 (Top View) 5 IN B+ SOIC−14 TSSOP−14 14 OUT D OUT A 1 13 IN D− IN A− 2 3 12 IN D+ IN A+ 3 12 IN D+ 4 11 V− V+ 4 11 V− IN B+ 5 10 IN C+ IN B+ 5 10 IN C+ IN B− 6 OUT B 7 OUT A 1 IN A− 2 IN A+ V+ (Top View) A − + + − V+ +IN 8 V+ 1 B D + − − + UDFN8/Micro8/SOIC−8 OUT A 5 C (Top View) http://onsemi.com 2 9 IN C− IN B− 6 8 OUT C OUT B 7 A − + + − 1 B D + − − + SC70−5/TSOP−5 C (Top View) 14 OUT D 13 IN D− 9 IN C− 8 OUT C LMV321, LMV358, LMV324 MAXIMUM RATINGS Symbol VS Rating Supply Voltage (Operating Range VS = 2.7 V to 5.5 V) Value Unit 5.5 V VIDR Input Differential Voltage $Supply Voltage V VICR Input Common Mode Voltage Range −0.5 to (V+) + 0.5 V 10 mA Maximum Input Current tSo Output Short Circuit (Note 1) TJ Maximum Junction Temperature (Operating Range −40°C to 85°C) qJA Thermal Resistance: Tstg Continuous °C °C/W SC−70 280 Micro8 238 TSOP−5 333 UDFN8 (1.2 mm x 1.8 mm x 0.5 mm) 350 SOIC−8 212 SOIC−14 156 TSSOP−14 190 Storage Temperature Mounting Temperature (Infrared or Convection −20 sec) VESD 150 ESD Tolerance LMV321 Machine Model Human Body Model LMV358/324 Machine Model Human Body Mode −65 to 150 °C 235 °C V 100 1000 100 2000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+ or V− will adversely affect reliability. http://onsemi.com 3 LMV321, LMV358, LMV324 2.7 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.7 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current Input Offset Current Symbol Condition VIO Min Typ Max Unit TA = −40°C to +85°C 1.7 9 mV ICVOS TA = −40°C to +85°C 5 mV/°C IB TA = −40°C to +85°C <1 nA IIO TA = −40°C to +85°C <1 nA Common Mode Rejection Ratio CMRR 0 V v VCM v 1.7 V 50 63 dB Power Supply Rejection Ratio PSRR 2.7 V v V+ v 5 V, VO = 1 V 50 60 dB Input Common−Mode Voltage Range VCM For CMRR w 50 dB 0 to 1.7 −0.2 to 1.9 V Output Swing VOH RL = 10 kW to 1.35 V VCC − 100 VCC − 10 mV VOL RL = 10 kW to 1.35 V (Note 2) Supply Current LMV321 LMV358 (Both Amplifiers) LMV324 (4 Amplifiers) ICC 60 180 mV 80 140 260 185 340 680 mA 2.7 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.7 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Gain Bandwidth Product Symbol Condition GBWP CL = 200 pF Phase Margin Qm Gain Margin Gm Input−Referred Voltage Noise en f = 50 kHz 2. Guaranteed by design and/or characterization. http://onsemi.com 4 Min Typ Max Unit 1 MHz 60 ° 10 dB 50 nV/√Hz LMV321, LMV358, LMV324 5.0 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5.0 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current (Note 3) Symbol Condition VIO TCVIO Min Typ Max Unit TA = −40°C to +85°C 1.7 9 mV TA = −40°C to +85°C 5 mV/°C <1 nA <1 nA IB TA = −40°C to +85°C Input Offset Current (Note 3) IIO TA = −40°C to +85°C Common Mode Rejection Ratio CMRR 0 V v VCM v 4 V 50 65 dB Power Supply Rejection Ratio PSRR 2.7 V v V+ v 5 V, VO = 1 V, VCM = 1 V 50 60 dB VCM For CMRR w 50 dB 0 to 4 −0.2 to 4.2 V AV RL = 2 kW 15 100 V/mV TA = −40°C to +85°C 10 VOH RL = 2 kW to 2.5 V TA = −40°C to +85°C VCC − 300 VCC − 400 VCC − 40 V VOL RL = 2 kW to 2.5 V (Note 3) TA = −40°C to +85°C VOH RL = 10 kW to 2.5 V (Note 3) TA = −40°C to +85°C VOL RL = 10 kW to 2.5 V TA = −40°C to +85°C Output Short Circuit Current IO Sourcing = VO = 0 V (Note 3) Sinking = VO = 5 V (Note 3) Supply Current ICC LMV321 TA = −40°C to +85°C 130 250 350 LMV358 Both Amplifiers TA = −40°C to +85°C 210 440 615 LMV324 All Four Amplifiers TA = −40°C to +85°C 410 830 1160 Input Common−Mode Voltage Range Large Signal Voltage Gain (Note 3) Output Swing 120 300 400 VCC − 100 VCC − 200 V 65 10 10 mV 180 280 60 160 mV mA mA 5.0 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5.0 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Slew Rate Gain Bandwidth Product Symbol Condition SR GBWP CL = 200 pF Min Typ Max Unit 1 V/ms 1 MHz Phase Margin Qm 60 ° Gain Margin Gm 10 dB Input−Referred Voltage Noise en 50 nV/√Hz f = 50 kHz 3. Guaranteed by design and/or characterization. http://onsemi.com 5 LMV321, LMV358, LMV324 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 120 170 100 150 PHASE MARGIN (°) GAIN (dB) 80 60 40 20 0 −20 10 Over −40°C to +85°C Same Gain $1.8 dB (Typ) 110 90 70 50 30 1k 10k 100k FREQUENCY (Hz) 100 130 1M 10 10M 10 90 75 80 70 70 65 60 60 CMRR (dB) CMRR (dB) 80 50 40 55 100k 1M 10M 45 20 40 10 35 10k 30 −0.5 100k VS = 2.7 V f = 10 kHz 50 30 1k 10k Figure 4. Open Loop Phase Margin (RL = 2 kW, TA = 255C, VS = 5 V) 100 100 1k FREQUENCY (Hz) Figure 3. Open Loop Frequency Response (RL = 2 kW, TA = 255C, VS = 5 V) 0 10 100 0 0.5 1 1.5 2 2.5 FREQUENCY (Hz) INPUT COMMON MODE VOLTAGE (V) Figure 5. CMRR vs. Frequency (RL = 5 kW, VS = 5 V) Figure 6. CMRR vs. Input Common Mode Voltage 80 3 100 90 70 80 60 PSRR (dB) CMRR (dB) 70 VS = 5 V f = 10 kHz 50 60 50 40 30 20 40 10 30 −1 0 1 2 3 4 0 1k 5 10k 100k 1M INPUT COMMON MODE VOLTAGE (V) FREQUENCY (Hz) Figure 7. CMRR vs. Input Common Mode Voltage Figure 8. PSRR vs. Frequency (RL = 5 kW, VS = 2.7 V, +PSRR) http://onsemi.com 6 10M LMV321, LMV358, LMV324 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 90 100 80 90 70 80 70 PSRR (dB) PSRR (dB) 60 50 40 30 60 50 40 30 20 20 10 10 0 1k 10k 100k 1M 0 1k 10M 10k FREQUENCY (Hz) 90 80 4 70 3.5 60 3 VOS (mV) PSRR (dB) 5 4.5 50 40 2.5 2 30 1.5 20 1 10 0.5 10k 100k 1M 0 10M VS = 2.7 V 0 0.5 FREQUENCY (Hz) 200 180 4 160 SUPPLY CURRENT (mA) 5 3.5 VOS (mV) 1.5 2 2.5 3 Figure 12. VOS vs CMR 4.5 3 2.5 2 1.5 VS = 5.0 V 0.5 0 1 VCM (V) Figure 11. PSRR vs. Frequency (RL = 5 kW, VS = 5 V, −PSRR) 1 10M Figure 10. PSRR vs. Frequency (RL = 5 kW, VS = 5 V, +PSRR) 100 1k 1M FREQUENCY (Hz) Figure 9. PSRR vs. Frequency (RL = 5 kW, VS = 2.7 V, −PSRR) 0 100k 140 120 100 80 60 40 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCM (V) SUPPLY VOLTAGE (V) Figure 13. VOS vs CMR Figure 14. Supply Current vs. Supply Voltage http://onsemi.com 7 5 LMV321, LMV358, LMV324 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 1 0 VOUT REFERENCED TO V+ (V) RL = 10 kW Vout = 1 VPP Av = +1 (%) 0.1 0.01 100 1k 10k −0.03 −0.04 −0.05 −0.06 −0.07 −0.08 −0.09 −0.1 2.5 4.5 5 Figure 16. Output Voltage Swing vs Supply Voltage (RL = 10k) −20 0.08 0.07 0.06 0.05 0.04 0.03 0.02 3 3.5 4 SUPPLY VOLTAGE (V) −60 −80 −100 −120 −140 Negative Swing 0.01 −40 4.5 −160 5 0 −20 100 SOURCE CURRENT (mA) 120 −40 −60 −80 −100 2 3 4 1 1.5 2 2.5 Figure 18. Sink Current vs. Output Voltage VS = 2.7 V 0 1 0.5 VOUT REFERENCED TO V− (V) Figure 17. Output Voltage Swing vs Supply Voltage (RL = 10k) SINK CURRENT (mA) 4 Figure 15. THD+N vs Frequency 0.09 0 3.5 SUPPLY VOLTAGE (V) 0 −120 3 (Hz) 0.1 0 2.5 Positive Swing −0.02 100k SINK CURRENT (mA) VOUT REFERENCED TO V− (V) 0.001 10 −0.01 80 60 40 20 0 5 VOUT REFERENCED TO V− (V) 0 0.5 1.0 1.5 2.0 VOUT REFERENCED TO V+ (V) Figure 19. Sink Current vs. Output Voltage VS = 5.0 V Figure 20. Source Current vs. Output Voltage VS = 2.7 V http://onsemi.com 8 2.5 LMV321, LMV358, LMV324 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 110 RL = 2 kW AV = 1 50 mV/div 2 ms/div SOURCE CURRENT (mA) 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 VOUT REFERENCED TO V+ (V) 5 Figure 21. Source Current vs. Output Voltage VS = 5.0 V Figure 22. Settling Time vs. Capacitive Load 50 mV/div 2 ms/div RL = 1 MW AV = 1 50 mV/div 2 ms/div Non−Inverting (G = +1) Input Output Figure 23. Settling Time vs. Capacitive Load Figure 24. Step Response − Small Signal 50 mV/div 2 ms/div 1 V/div 2 ms/div Non−Inverting (G = +1) Inverting (G = −1) Input Input Output Output Figure 26. Step Response − Large Signal Figure 25. Step Response − Small Signal http://onsemi.com 9 LMV321, LMV358, LMV324 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 1 V/div 2 ms/div Inverting (G = −1) Input Output Figure 27. Step Response − Large Signal http://onsemi.com 10 LMV321, LMV358, LMV324 APPLICATIONS 50 k R1 5.0 k VCC VCC R2 10 k MC1403 2.5 V VO LMV321 VO LMV321 VCC − Vref − + + 1 V ref + V CC 2 R1 V O + 2.5 V(1 ) ) R2 R R Figure 28. Voltage Reference fO + C C 1 2pRC For: fo = 1.0 kHz R = 16 kW C = 0.01 mF Figure 29. Wien Bridge Oscillator VCC C R1 Vin R2 C R3 − Hysteresis Vin R1 + R2 VOH Vref LMV321 − VO VOL VO CO = 10 C Vref VO + CO LMV321 VinL Given: fo = center frequency A(fo) = gain at center frequency VinH Choose value fo, C Q Then : R3 + pf O C Vref R1 (V OL * V ref) ) V ref R1 ) R2 R1 V inH + (V OH * V ref) ) V ref R1 ) R2 R1 H+ (V OH * V OL) R1 ) R2 V inL + R1 + R2 + R3 2 A(f O) R1 R3 4Q 2 R1 * R3 Figure 30. Comparator with Hysteresis For less than 10% error from operational amplifier, ((QO fO)/BW) < 0.1 where fo and BW are expressed in Hz. If source impedance varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. Figure 31. Multiple Feedback Bandpass Filter http://onsemi.com 11 LMV321, LMV358, LMV324 ORDERING INFORMATION Number of Channels Specific Device Marking Package Type Shipping† LMV321SQ3T2G Single AAC SC−70 (Pb−Free) 3000 / Tape & Reel LMV321SN3T1G* Single 3AC TSOP−5 (Pb−Free) 3000 / Tape & Reel LMV358DMR2G Dual V358 Micro8 (Pb−Free) 4000 / Tape & Reel LMV358MUTAG Dual AC UDFN8 (Pb−Free) 3000 / Tape & Reel LMV358DR2G Dual V358 SOIC−8 (Pb−Free) 2500 / Tape & Reel LMV324DR2G Quad LMV324 SOIC−14 (Pb−Free) 2500 / Tape & Reel LMV324DTBR2G Quad LMV 324 TSSOP−14 (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact factory. http://onsemi.com 12 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. K http://onsemi.com 13 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE H D 5X NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B M 5 1 4 2 L 3 B S K DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS Micro8™ CASE 846A−02 ISSUE H D HE PIN 1 ID NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. E e b 8 PL 0.08 (0.003) T B M S A DIM A A1 b c D E e L HE S SEATING −T− PLANE 0.038 (0.0015) A A1 MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 L c SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 3.20 0.126 6X 8X 4.24 0.167 0.65 0.0256 5.28 0.208 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X S M J SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 16 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS UDFN8 1.8x1.2, 0.4P CASE 517AJ−01 ISSUE O PIN ONE REFERENCE ÉÉ ÉÉ 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL TIP. 4. MOLD FLASH ALLOWED ON TERMINALS ALONG EDGE OF PACKAGE. FLASH MAY NOT EXCEED 0.03 ONTO BOTTOM SURFACE OF TERMINALS. 5. DETAIL A SHOWS OPTIONAL CONSTRUCTION FOR TERMINALS. A B D 0.10 C L1 E DETAIL A NOTE 5 TOP VIEW (A3) 0.05 C DIM A A1 A3 b b2 D E e L L1 L2 A 0.05 C SIDE VIEW e/2 (b2) A1 e 1 C SEATING PLANE DETAIL A 8X L 4 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 0.30 REF 1.80 BSC 1.20 BSC 0.40 BSC 0.45 0.55 0.00 0.03 0.40 REF MOUNTING FOOTPRINT* SOLDERMASK DEFINED (L2) 8 5 BOTTOM VIEW 8X 8X b 0.66 7X 0.10 M C A B 0.05 M C 0.22 NOTE 3 1.50 1 0.32 0.40 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 17 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− 0.25 (0.010) M T B S A DIM A B C D F G J K M P R J M K D 14 PL F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 18 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 LMV321, LMV358, LMV324 PACKAGE DIMENSIONS TSSOP−14 CASE 948G−01 ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U T U M V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 DIM A B C D F G H J J1 K K1 L M SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 19 MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ LMV321, LMV358, LMV324 Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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