LT1161 Quad Protected High-Side MOSFET Driver U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection Individual Automatic Restart Timers Programmable Current Limit, Delay Time, and Auto-Restart Period Voltage-Limited Gate Drive Defaults to OFF State with Open Input Flowthrough Input to Output Pinout Available in 20-Lead DIP or SOL Package The LT1161 is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. It has four independent switch channels, each containing a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. Also included in each switch channel is a drain sense comparator that is used to sense switch current. When a preset current level is exceeded, the switch is turned off. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault is still present, this cycle repeats until the fault is removed, thus protecting the MOSFET. U APPLICATIO S ■ ■ ■ ■ ■ The LT1161 has been specifically designed for harsh operating environments such as industrial, avionics, and automotive applications where poor supply regulation and/or transients may be present. The device will not sustain damage from supply voltages of –15V to 60V. Industrial Control Avionics Systems Automotive Switches Stepper Motor and DC Motor Control Electronic Circuit Breaker , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. U TYPICAL APPLICATIO 24V + 0.1µF 0.1µF 0.1µF INPUTS T1 DS1 RS 0.01Ω T2 G1 IRFZ34 V+ V+ IN1 IN2 IN3 IN4 GND GND 0.50 0.45 DS2 T3 T4 Switch Drop vs Load Current 50µF 50V LT1161 G2 0.01Ω LOAD #1 IRFZ34 DS3 0.01Ω G3 IRFZ34 DS4 0.01Ω G4 IRFZ34 LOAD #2 0.40 TOTAL DROP (V) CT 0.1µF 0.35 0.30 0.25 0.20 0.15 LOAD #3 0.10 0.05 0 LOAD #4 0 1 3 2 LOAD CURRENT (A) 4 5 1161 TA01 1161 F01 Figure 1. Protected Quad High-Side Switch 1161fa 1 LT1161 U W U W W U W ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION Supply Voltages (Pins 11, 20) ................... – 15V to 60V Input Voltages (Pins 3, 5, 7, 9) ...... (GND – 0.3V) to 15V Gate Voltages (Pins 12, 14, 16, 18) ........................ 75V Sense Voltages (Pins 13, 15, 17, 19) ................. V + ±5V Current (Any Pin) .................................................. 50mA Operating Temperature Range LT1161C ............................................... 0°C to 70°C LT1161I ............................................ – 40°C to 85°C Junction Temperature Range (Note 1) LT1161C .............................................. 0°C to 125°C LT1161I ......................................... – 40°C to 150°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C ORDER PART NUMBER TOP VIEW GND 1 20 V + TIMER1 2 19 SENSE 1 INPUT 1 3 18 GATE 1 TIMER 2 4 17 SENSE 2 INPUT 2 5 16 GATE 2 TIMER 3 6 15 SENSE 3 INPUT 3 7 14 GATE 3 TIMER 4 8 13 SENSE 4 INPUT 4 9 12 GATE 4 GND 10 11 V + N PACKAGE 20-LEAD PLASTIC DIP SW PACKAGE 20-LEAD PLASTIC SO LT1161CN LT1161CSW LT1161IN LT1161ISW θJA = 70°C/ W (N) θJA = 110°C/ W (S) Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. V + = 12V to 48V each channel, unless otherwise noted. SYMBOL IS ∆IS(ON) VINH VINL IIN PARAMETER Supply Current Delta Supply Current (ON State) Input High Voltage Input Low Voltage Input Current CIN VT(TH) VT(CL) IT VSEN Input Capacitance Timer Threshold Voltage Timer Clamp Voltage Timer Charge Current Drain Sense Threshold Voltage Temperature Coefficient Drain Sense Input Current Gate Voltage Above Supply ISEN VGATE – V + tON tOFF tOFF(CL) Turn-ON Time Turn-OFF Time Current Limit Turn-OFF Time CONDITIONS All Channels OFF (Note 2) Measure Increase in IS per Channel MIN 3 ● TYP 4.5 1 2 ● VIN = 2V VIN = 5V ● ● 15 55 VIN = 2V, Adjust V T VIN = 0.8V VIN = V T = 2V ● 2.7 3.2 9 50 V + = 48V, VSEN = 65mV V + = 8V V + = 12V V + = 24V V + = 48V V + = 24V, VGATE > 32V, CGATE = 1000pF V + = 24V, VGATE < 2V, CGATE = 1000pF V + = 24V, (V + – VSENSE ) → 0.1V, CGATE = 1000pF Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. ● ● ● MAX 6.5 1.35 4 7 10 10 100 30 110 5 3 3.5 14 65 +0.33 0.5 4.5 8.5 12 12 220 75 25 0.8 50 185 3.3 3.8 20 80 1.5 6 10 14 14 400 200 50 UNITS mA mA V V µA µA pF V V µA mV %/°C µA V V V V µs µs µs Note 2: Both V + pins (11, 20) must be connected together and both ground pins (1, 10) must be connected together. 1161fa 2 LT1161 U W TYPICAL PERFORMANCE CHARACTERISTICS MOSFET Gate Voltage Above V + 20 16 18 14 TJ = 85°C 12 14 TJ = –40°C VGATE – V + SUPPLY CURRENT (mA) 16 MOSFET Gate Drive Current 100 GATE DRIVE CURRENT (µA) Supply Current 12 ALL CHANNELS ON 10 8 ALL CHANNELS OFF 6 10 TJ = 25°C 8 6 4 4 10 30 20 INPUT VOLTAGE (V) 40 0 50 10 20 30 INPUT VOLTAGE (V) 40 12 ALL CHANNELS ON 8 6 ALL CHANNELS OFF 4 2 2.0 1.8 TURN-ON 1.6 1.4 TURN-OFF 1.2 1.0 0.8 0.6 0 –50 –25 25 50 0 TEMPERATURE (°C) 0.4 –50 100 75 –25 25 50 0 TEMPERATURE (°C) 90 80 70 60 50 40 30 20 –25 25 50 0 TEMPERATURE (°C) 75 Turn-ON Time Driving MOSFET Turn-OFF Time Driving MOSFET Automatic Restart Period 100 IRFZ34 1000 IRFZ34 90 100 1161 G06 1161 G05 500 16 V + = 24V 100 10 –50 100 75 1161 G04 450 4 8 6 10 12 14 GATE VOLTAGE ABOVE V + (V) Drain Sense Threshold Voltage DRAIN SENSE THRESHOLD VOLTAGE (mV) INPUT THRESHOLD VOLTAGE (V) SUPPLY CURRENT (mA) 14 2 1161 G03 110 V + = 24V 2.2 16 10 0 Input Threshold Voltage 2.4 V + = 24V 18 50 1161 G02 Supply Current 20 V + = 24V CT = 3.3µF 80 350 300 250 200 150 70 60 40 30 20 50 10 10 30 20 INPUT VOLTAGE (V) 40 50 1161 G07 NORMAL 50 100 0 RESTART PERIOD (ms) TURN-OFF TIME (µs) 400 TURN-ON TIME (µs) V + = 8V 1 0.1 0 0 1161 G01 0 V + = 12V 2 2 0 V + ≥ 24V 10 0 CURRENT LIMIT CT = 1µF 100 CT = 0.33µF CT = 0.1µF 0 10 30 20 INPUT VOLTAGE (V) 40 50 10 –50 –25 0 25 50 TEMPERATURE (°C) 75 100 1161 G08 1161 G09 1161fa 3 LT1161 U U U PIN FUNCTIONS Supply Pins: The two supply pins are internally connected and must also be externally connected. In addition to providing the operating current for the LT1161, the supply pins also serve as the Kelvin connection for the current sense comparators. The supply pins must be connected to the positive side of the drain sense resistors for proper operation of the current sense. Input Pins: The input pins are active high and each pin activates a separate internal charge pump when switched ON. The input threshold is TTL/CMOS compatible but may be taken as high as 15V with or without the supply powered. Each input has approximately 200mV of hysteresis and an internal 75k pull-down resistor. Gate Pins: The gate pins drive the power MOSFET gates. When an input is ON, the corresponding gate pin is pumped approximately 12V above the supply. These pins have a relatively high impedance when above the rail (the equivalent of a few hundred kilohms). Care should be taken to minimize any loading by parasitic resistance to ground or supply. Sense Pins: Each sense pin connects to the input of a supply-referenced comparator with a 65mV nominal offset. When a sense pin is taken more than 65mV below W FUNCTIONAL DIAGRA supply, the MOSFET gate for that channel is driven low and the corresponding timing capacitor discharged. Each current-sense comparator operates completely independently. The 65mV typical threshold has a +0.33%/°C temperature coefficient, which closely matches the TC of drain sense resistors formed from copper PC traces. Some loads require high in-rush currents. An RC time delay can be added between the drain sense resistor and the sense pin to ensure that the current-sense comparator does not false trigger during start-up (see Applications Information). However, a maximum of 10kΩ can be inserted between a drain sense resistor and the sense pin. If current sense is not required in any channel, the sense pin for that channel is tied to supply. Timer Pins: A timing capacitor CT from each timer pin to ground sets the restart time following overcurrent detection. CT is rapidly discharged to less than 1V and then recharged by a 14µA nominal current source back to the timer threshold, whereupon restart is attempted. If current sense is not required in any channel, the timer pin for that channel is left open. Ground Pins: The two ground pins are internally connected and must also be externally connected. (Each Channel) U U V+ 3V 14µA + 65mV + – TIMER – SENSE + – 1.4V 75k INPUT 1.4V OSCILLATOR AND CHARGE PUMP GATE + – 75k 1161 FD 1161fa 4 LT1161 U OPERATIO (Each Channel, Refer to Functional Diagram) The LT1161 gate pin has two states, OFF and ON. In the OFF state it is held low, while in the ON state it is pumped to 12V above supply by a self-contained 750kHz charge pump. The OFF state is activated when either the input pin is below 1.4V or the timer pin is below 3V. Conversely, for the ON state to be activated, both the input and timer pins must be above their thresholds. If left open, the input pin is held low by a 75k resistor, while the timer pin is held a diode drop above 3V by a 14µA pullup current source. Thus the timer pin automatically reverts to the ON state, subject to the input also being high. The input has approximately 200mV of hysteresis. The sense pin normally connects to the drain of the power MOSFET, which returns through a low valued drain sense resistor to supply. When the gate is ON and the MOSFET drain current exceeds the level required to generate a 65mV drop across the drain sense resistor, the sense comparator activates a pull-down NPN which rapidly pulls the timer pin below 3V. This in turn causes the timer comparator to override the input pin and activate the gate pin OFF state, thus protecting the power MOSFET. In order for the sense comparator to accurately sense MOSFET drain current, the LT1161 supply pins must be connected directly to the positive side of the drain sense resistors. When the MOSFET gate voltage is less than 1.4V, the timer pin is released. The 14µA current source then slowly charges the timing capacitor back to 3V where the charge pump again starts to drive the gate pin high. If a fault still exists, such as a short circuit, the sense comparator threshold will again be exceeded and the timer cycle will repeat until the fault is removed (see Figure 2). OFF NORMAL OVERCURRENT NORMAL INPUT 12V V+ GATE 0V 3V TIMER 0V 1161 F02 Figure 2. Timing Diagram U W U U APPLICATIONS INFORMATION Input/Supply Sequencing There are no input/supply sequencing requirements for the LT1161. The input may be taken up to 15V with the supply at 0V. When the supply is turned on with an input high, the MOSFET turn-on will be inhibited until the timing capacitor charges to 3V (i.e., for one restart cycle). The two V + pins (11, 20) must always be connected to each other. rating, for supply voltages of 12V to 48V over the entire temperature range. In order to maintain the OFF state, the opto must have less than 20µA of dark current (leakage) hot. 12V TO 48V 100k LOGIC INPUT 1/4 NEC PS2501-4 2k IN Isolating the Inputs LT1161 51k Operation in harsh environments may require isolation to prevent ground transients from damaging control logic. The LT1161 easily interfaces to low cost opto-isolators. The network shown in Figure 3 ensures that the input will be pulled above 2V, but not exceed the absolute maximum LOGIC GND POWER GROUND GND GND 1161 F03 Figure 3. Isolating the Inputs 1161fa 5 LT1161 U W U U APPLICATIONS INFORMATION Drain Sense Configuration Automatic Restart Period The LT1161 uses supply-referenced current sensing. One input of each channel’s current-sense comparator is connected to a drain sense pin, while the second input is offset 65mV below the supply bus inside the device. For this reason, Pins 11 and 20 of the LT1161 must be treated not only as supply pins, but as the reference inputs for the current-sense comparators. The timing capacitor CT shown in Figure 4 determines the length of time the power MOSFET is held off following a current limit trip. Curves are given in the Typical Performance Characteristics to show the restart period for various values of CT. For example, CT = 0.33µF yields a 50ms restart period. Figure 4 shows the proper drain sense configuration for the LT1161. Note that the sense pin goes to the drain end of the sense resistor, while the two V + pins are tied to each other and connected to supply at the same point as the positive ends of the sense resistors. Local supply decoupling at the LT1161 is important at high input voltages (see Protecting Against Supply Transients). The drain sense threshold voltage has a positive temperature coefficient, allowing PTC sense resistors to be used (see Printed Circuit Board Shunts). The selection of RS should be based on the minimum threshold voltage: Defeating Automatic Restart Some applications are required to remain off after a fault occurs. When the LT1161 is being driven from CMOS logic, this can be easily implemented by connecting resistor R1 between the input and timer pins as shown in Figure 5. R1 supplies the sustaining current for an SCR which latches the timer pin low. This prevents the MOSFET gate from turning ON until the input has been recycled. TIMER RS = R1 2k 50mV ISET 5V CMOS LOGIC Thus the 0.02Ω drain sense resistor in Figure 4 would yield a minimum trip current of 2.5A. This simple configuration is appropriate for resistive or inductive loads which do not generate large current transients at turn-on. ON = 5V OFF = 0V LT1161 INPUT 1161 F05 Figure 5. Latch-Off Input Network (Auto-Restart Defeated) Inductive vs Capacitive Loads 24V V+ V+ + 10µF LT1161 + 100µF 50V RS 0.02Ω (PTC) DS1 1161 F04 T1 CT 1µF G1 IRFZ34 GND GND 24V, 2A SOLENOID Figure 4. Drain Sense Configuration Turning on an inductive load produces a relatively benign ramp in MOSFET current. However, when an inductive load is turned off, the current stored in the inductor needs somewhere to decay. A clamp diode connected directly across each inductive load normally serves this purpose. If a diode is not employed the LT1161 clamps the MOSFET gate 0.7V below ground. This causes the MOSFET to resume conduction during the current decay with (V + + VGS + 0.7V) across it, resulting in high dissipation peaks. Capacitive loads exhibit the opposite behavior. Any load that includes a decoupling capacitor will generate a current equal to CLOAD × (∂V/∂t) during capacitor in-rush. With large electrolytic capacitors, the resulting current 1161fa 6 LT1161 U U W U APPLICATIONS INFORMATION Turn-on ∂V/∂t is controlled by the addition of the simple network shown in Figure 6. This network takes advantage of the fact that the MOSFET acts as a source follower during turn-on. Thus the ∂V/∂t on the source can be controlled by controlling the ∂V/∂t on the gate: ∂V V + − VTH = ∂ t 105 × C1 where VTH is the MOSFET gate threshold voltage. Multiplying CLOAD times this ∂V/∂t yields the value of the current spike. For example, if V + = 24V, VTH = 2V, and C1 = 0.1µF, ∂V/∂t = 2.2V/ms, resulting in a 2.2A turn-on spike into 1000µF. The diode and second resistor in the network ensure fast current limit turn-off. When turning off a capacitive load, the source of the MOSFET can “hang up” if the load resistance does not discharge CLOAD as fast as the gate is being pulled down. If this is the case, a diode may have to be added from source to gate to prevent VGS(MAX) from being exceeded. CURRENT LIMIT DELAY NETWORK V+ V+ 24V + 1N4148 CD RD (≤10k) DS ∂V/∂t CONTROL NETWORK 1N4148 LT1161 100k 100k 1RFZ24 G C1 + CLOAD 1161 F06 Figure 6. ∂V/∂t Control and Current Limit Delay Adding Current Limit Delay When capacitive loads are being switched or in very noisy environments, it is desirable to add delay in the drain current-sense path to prevent false tripping (inductive loads normally do not need delay). This is accomplished by the current limit delay network shown in Figure 6. RD and CD delay the overcurrent trip for drain currents up to approximately 10 × ISET, above which the diode conducts and provides immediate turn-off (see Figure 7). To ensure proper operation of the timer, CD must be ≤ CT. 10 TRIP DELAY TIME (1 = RDCD) spike can play havoc with the power supply and false trip the current-sense comparator. 1 0.1 0.01 1 10 100 MOSFET DRAIN CURRENT (1 = SET CURRENT) L1161 F07 Figure 7. Current Limit Delay Time Printed Circuit Board Shunts The sheet resistance of 1oz. copper clad is approximately 5 × 10 –4 Ω/square with a temperature coefficient of +0.39%/°C. Since the LT1161 drain sense threshold has a similar temperature coefficient (+0.33%/°C), this offers the possibility of nearly zero TC current sensing using “free” drain sense resistors made out of PC trace material. A conservative approach is to use 0.02" of width for each 1A of current for 1oz. copper. Combining the LT1161 drain sense threshold with the 1oz. copper sheet resistance results in a simple expression for width and length: Width (1oz. Cu) = 0.02" × ISET Length (1oz. Cu) = 2" The width for 2oz. copper would be halved while the length would remain the same. Bends may be incorporated into the resistor to reduce space; each bend is equivalent to approximately 0.6 × width of straight length. Kelvin connections should be employed by running separate traces from the ends of the resistors back to the LT1161 V + and sense pins. See Application Note 53 for further information on printed circuit board shunts. 1161fa 7 LT1161 U W U U APPLICATIONS INFORMATION Low Voltage/Wide Supply Range Operation When the supply is <12V, the LT1161 charge pumps do not produce sufficient gate voltage to fully enhance standard N-channel MOSFETs. For these applications, logiclevel MOSFETs can be used to extend operation down to 8V. If the MOSFET has a maximum VGS rating of 15V or greater, then it can also be used up to the 60V (absolute maximum) rating of the LT1161. MOSFETs are available from both Motorola and Siliconix which meet these criteria. The second method shown in Figure 8 uses a quad exclusive-NOR gate to indicate when the output of the switch has not obeyed the input command (i.e., output low when it should be high or vice versa). In addition to current limit, this gives a fault indication if the switch is shorted or if the load is open. 24V V+ V+ LT1161 ROL ADD FOR OPEN-LOAD DETECTION G FAULT The LT1161 is 100% tested and guaranteed to be safe from damage with 60V applied between the V + and ground pins. However, when this voltage is exceeded, even for a few microseconds, the result can be a catastrophic failure. For this reason it is imperative that the LT1161 not be exposed to supply transients above 60V. DS IN INPUT Protecting Against Supply Transients RS 1/4 MM74HC266A LOAD 100k 1161 F08 Figure 8. Fault Feedback Using Exclusive-NOR Gate V+ pins are reFor proper current-sense operation, the quired to be connected to the positive side of the drain sense resistors (see Drain Sense Configuration). Therefore, the best way to prevent supply transients is to ensure that the supply is adequately decoupled at the point where the V + pins and drain sense resistors meet. Several hundred microfarads may be required with high current switches. When operating voltages approach the 60V absolute maximum rating of the LT1161, local supply decoupling between the V + pins (11, 20) and ground pins (1, 10) is highly recommended. A small ferrite bead between the supply connection and local capacitor can also be effective in suppressing transients. Note however, that resistance should not be added in series with the V + pins because it will cause an error in the current sense threshold. Low-Side Driving Although the LT1161 is primarily targeted at high-side (grounded load) switch applications, it can also be used for low-side (supply-connected load), or mixed high- and low-side switch applications. Figures 9a and 9b illustrate LT1161 switch channels driving low-side power MOSFETs. Because the LT1161 charge pump tries to pump the gate of the N-channel MOSFET above supply, a clamp zener is required to prevent the VGS (absolute maximum) of the MOSFET from being exceeded. The LT1161 gate drive is current limited for this purpose so that no resistance is needed between the gate pin and zener. 12V TO 48V V+ V+ Fault Feedback Two methods can be used to derive switch status. First, the timer pin voltage can be monitored to indicate when the switch is turned off due to current limit. During normal operation (ON or OFF), the timer voltage is 3.5V and only during current limit does the voltage drop below 3V. T 1µF LT1161 + 100µF RS 0.01Ω (PTC) DS 4A LOAD IRFZ44 G 15V 1N4744 1161 F09a Figure 9a. Low-Side Driver with Load Current Sensing 1161fa 8 LT1161 U U W U APPLICATIONS INFORMATION supply operating range of the LT1161. This allows the load to be returned to supply through current-sense resistor RS, providing normal operation of the LT1161 protection circuitry. 8V TO 24V HV 10µF 1N4148 V+ T1 V+ DS1 1µF 51Ω G1 LT1161 1µF HV LOAD IRF630 If the load cannot be returned to supply through RS, or the load supply voltage is higher than the LT1161 supply, the current sense must be moved to the source of the low-side MOSFET. Figure 9b shows two approaches to source sensing. On channel 1, current limit occurs when the voltage across sense resistor RS1 thresholds the VBE of the NPN transistor, causing the LT1161 drain sense pin to be pulled down. 2N2222 15V 1N4744 51Ω T2 HV LOAD RS1 0.2Ω DS2 IRF630 G2 + 2N2222 1/2 LT1013 – 51Ω 15V 1N4744 RS2 0.02Ω 1161 F09b The channel 2 circuit of Figure 9b uses an operational amplifier (must common mode to ground) to level shift the voltage across RS2 up to the drain sense pin. This approach allows the use of a much smaller sense resistor which could be made from PC trace material. In both cases, the LT1161 restart timers function the same as in high-side switch applications. Figure 9b. Low-Side Drivers with Two Approaches for Source Current Sensing Current sensing for protecting low-side drivers can be done in several different ways. In the Figure 9a circuit, the supply voltage for the load is assumed to be within the U TYPICAL APPLICATIONS Using an Extra Channel to Do Common Current Limit for Multiple/Paralleled Switches 24V 100k 1 1µF 2 3 4 5 6 INPUTS (MAY BE PARALLELED) 7 8 9 10 V+ GND T1 DS1 IN1 G1 T2 DS2 IN2 LT1161 G2 T3 DS3 IN3 G3 20 RS 19 18 10µF 50V 15k 17 16 IRFZ44 15 14 IRFZ44 OUTPUTS (MAY BE PARALLELED) 13 T4 DS4 IN4 G4 GND 11 V+ 12 IRFZ44 1161 TA05 1161fa 9 LT1161 U TYPICAL APPLICATIONS Protected Quad 1A Automotive Solenoid Driver with Overvoltage Shutdown 1 1N4148 3 4 0.33µF 1N4148 INPUTS GND 2 0.33µF 5 1N4148 IN1 G1 T2 DS2 LT1161 G3 T4 9 10 G2 DS3 IN3 8 1N4148 DS1 T3 7 0.33µF T1 IN2 6 0.33µF 8V TO 28V OPERATING 32V TO 60V SHUTDOWN 20 V+ DS4 19 18 MTD3055EL 17 0.03Ω 16 MTD3055EL 15 0.03Ω 14 MTD3055EL 13 0.03Ω 12 IN4 G4 GND 11 V+ 10µF 100V 0.03Ω MTD3055EL 2N3904 5.1k 10k 30V 1N6011B 1161 TA03 Protected Quad Switch with Mixed Low- and High-Side Driving 10µF + 24V 0.01Ω 1 0.33µF 2 3 HIGH-SIDE DRIVER INPUTS (SEE NOTE 1) 0.33µF 4 5 2k 6 7 LOW-SIDE DRIVER INPUTS (SEE NOTE 2) 2k 8 9 10 20 V+ GND DS1 T1 G1 IN1 DS2 T2 IN2 LT1161 T3 G2 DS3 IN3 G3 T4 DS4 + 100µF 50V 17 MTP36N06E 16 1N4148 24V/3A LOAD 51Ω 150V/1A LOAD 15 14 2N2222 GND 15V 1N4744 1N4148 12 11 V+ 150V MTP10N40E 13 G4 NOTE 2: THE LOW-SIDE DRIVER CHANNELS ARE CONFIGURED TO LATCH OFF FOLLOWING A FAULT. 5V CMOS LOGIC INPUTS ARE REQUIRED. 24V/3A LOAD 0.01Ω 18 IN4 NOTE 1: THE HIGH-SIDE DRIVER CHANNELS ARE CONFIGURED TO AUTOMATICALLY RESTART FOLLOWING A FAULT. MTP36N06E 19 0.4Ω 150V/1A LOAD 51Ω 2N2222 15V 1N4744 MTP10N40E 0.4Ω 1161 TA04 1161fa 10 LT1161 U TYPICAL APPLICATIONS Protected Quad 2A Industrial Switch with Isolated Inputs and Fault Output 24V 1 NEC PS2501-4 5.1k 2 1µF 3 5.1k 4 1µF INPUTS 5 5.1k 6 1µF 7 5.1k 1µF 8 9 10 24V 20 V+ GND T1 DS1 IN1 G1 T2 DS2 IN2 G2 LT1161 T3 DS3 IN3 G3 T4 DS4 IN4 G4 GND V+ 19 18 17 16 15 14 13 12 + 0.015Ω 50µF 50V RFD16N05 LOAD #1 0.015Ω 100k RFD16N05 LOAD #2 0.015Ω 100k RFD16N05 LOAD #3 0.015Ω 100k RFD16N05 LOAD #4 11 MM74HC266A 100k 18k 2N3904 1161 TA02 5.6V 1N5994B 4N28 5.1k FAULT OUTPUT 0.1µF 2k U PACKAGE DESCRIPTION N Package 20-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 +0.889 8.255 –0.381 ) 1.060* (26.924) MAX .045 – .065 (1.143 – 1.651) .125 – .145 (3.175 – 3.683) .020 (0.508) MIN .065 (1.651) TYP .120 (3.048) MIN .005 (0.127) MIN .100 (2.54) BSC 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 .255 ± .015* (6.477 ± 0.381) .018 ± .003 (0.457 ± 0.076) N20 0405 NOTE: 1. DIMENSIONS ARE INCHES MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm) 1161fa Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1161 U PACKAGE DESCRIPTION SW Package 20-Lead Plastic Small Outline (Wide .300 Inch) (Reference LTC DWG # 05-08-1620) .050 BSC .045 ±.005 .030 ±.005 TYP .496 – .512 (12.598 – 13.005) NOTE 4 N 20 18 17 16 15 14 13 12 11 N .325 ±.005 .420 MIN 19 .394 – .419 (10.007 – 10.643) NOTE 3 1 2 3 N/2 N/2 RECOMMENDED SOLDER PAD LAYOUT .005 (0.127) RAD MIN .291 – .299 (7.391 – 7.595) NOTE 4 .010 – .029 × 45° (0.254 – 0.737) .009 – .013 (0.229 – 0.330) NOTE: 1. DIMENSIONS IN 1 2 3 4 5 6 7 8 9 10 .037 – .045 (0.940 – 1.143) .093 – .104 (2.362 – 2.642) 0° – 8° TYP .050 (1.270) BSC NOTE 3 .016 – .050 (0.406 – 1.270) .004 – .012 (0.102 – 0.305) .014 – .019 (0.356 – 0.482) TYP S20 (WIDE) 0502 INCHES (MILLIMETERS) 2. DRAWING NOT TO SCALE 3. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS 4. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1158 Half-Bridge N-Channel Power MOSFET Driver Single Input, Continuous Current Protection and Internal Charge Pump for DC Operation LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator Onboard Boost Regulator to Supply the High Side Driver LT1910 Protected High Side MOSFET Driver VIN = 8V to 48V, Protected from –15V to 60V Transients, Auto Restart, Fault Indication LTC1922-1 Synchronous Phase Modulated Full-Bridge Controller Output Power from 50W to Kilowatts, Adaptive Direct Sense Zero Voltage Switching Compensates for External Component Tolerances LTC1923 Full-Bridge Controller for Thermoelectric Coolers High Efficiency, Adjustabe Slew Rate Reduces EMI 5mm × 5mm QFN and 28-Pin SSOP 1161fa 12 Linear Technology Corporation LT 0406 REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1994